• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.157-162
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• 2003

For fabricating high T$\sub$c/ superconducting deposition film, novel electrophoretic deposition (EPD) technique applied to deposit surface charged particles on metal substrate with only d.c field has been studied. However, the electric properties of superconducting film could not be improved easily by this way, because the particles of EPD film were usually deposited randomly on metal substrate without any directional orientation affected to its critical current density. For the purpose of obtaining partcle orientation on the EPD films, the new method modified by a.c. assisted field to the conventional electrophoresis system was investigated to improve the particle deposition density and to increase the contacting area among the particles with highly oriented particle deposition of BSCCO superconducting film.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.76.2-76.2
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• 2013

Advanced electronic application areas have strongly required new materials due to the continuous shrinking dimensions of their devices. Specially, the development and use of metal precursors for atomic layer deposition has been extensively focused on application to electronic devices. Thus the systematic design and synthesis of metal compounds with relevant chemical and physical properties, such as stability, volatility, and resistance to air and moisture are very important in the vacuum deposition fields. In many case, organic ligands for metal precursors are especially focused in the related research areas because the large scale synthesis of the metal complexes with excellent properties exclusively depends on the potential usefulness of the ligands. It is recommended for metal complexes to be in monomeric forms because mononuclear complexes generally show high vapor pressures comparing with their oligomeric structure such as dimer and trimer. Simple metal alkoxides complexes are involatile except several examples such as Ti(OiPr)4, Si(OEt)4, and Hf(OtBu)4. Thus the coordinated atom of alkoxide ligands should be crowded in its own environment with some substituents by prohibiting the coordinated atoms from bonding to another metal through oxygen-bridging configuration. Alkoxide ligands containing donor-functionalized group such as amino and alkoxy which can induce the increasing of the coordinative saturation of the metal complexes and the decreasing of the intermolecular interaction between or among the metal compounds. In this presentation, we will discuss the development of metal compounds which adopted donor-functionalized alkoxide ligands derived from their alcohols for electronic application. Some recent results on ALD using metal precursors such as tin, nickel, ruthenium, and tungsten developed in our group will be disclosed.

• 한국산학기술학회논문지
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• 제18권7호
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• pp.17-25
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• 2017

최근에 LED나 OLED와 같은 조명용 소자의 온도 상승에 따른 문제점을 개선하기 위하여 전기 도금 방법을 사용하여 제작한 두께가 두꺼운 금속 필름을 heat sink로 사용하고 있다. Cu 필름과 같은 두꺼운 금속 필름은 습식 방법인 전기 도금으로 제작하여 주로 소자의 방열판으로 사용되어 왔으나 건식의 증착 방법을 이용한 수 백 ${\mu}m$의 Cu 금속 필름에 대한 필요성이 요구되고 있다. 본 연구에서 설계 제작된 유도 가열 방식의 Cu 필름 증착 장비는 가열부가 세라믹 도가니 히터 부분과 세라믹 도가니 부분으로 분리된 이중 구조의 heating 방식을 채택하여 열 손실을 최소화 하고 보온 효과를 극대화시켰다. 또한 유도 가열 방식으로 초고속의 필름 증착 속도를 구현하였다. 그리고 열전도도가 높고 안정적인 두꺼운 Cu 필름 증착기술을 확보하고 최적화 하여 $1000{\AA}/s$의 증착율로 $100{\mu}m$의 필름을 증착 하였으며 ~2.0% 이내의 두께 균일도를 얻었다.

• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.147-151
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• 2009

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1061-1064
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• 2003

In this paper, we deposited A1$_2$O$_3$ thin film using atomic layer deposition(ALD) method on Ti and fabricated metal-insulator-metal(MIM) capacitor. In the result of this study, the typical deposition rate was about 1.12$\AA$/cycle. About 30 nm of Ti was consumed during deposition and TiO$_{x}$ was formed at the interface of A1$_2$O$_3$ and Ti. Its surface roughness was 1.54nm. The leakage current density was 1.5 nA/$\textrm{cm}^2$. The temperature coefficient of capacitance(TCC) of MIM capacitor was 41 ppm/$^{\circ}C$ at 1MHz and 100 ppm/$^{\circ}C$ at 100 kHz.z.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.21-23
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• 2003

MOCVD method is one of promising techniques which can fabricate YBCO coated conductors in a low Price A continuous reel-to-reel MOCVD device using a dispersed solid source was designed and manufactured. YBCO films were deposited on various substrates of metallic silver, (100) MgO and SrTiO3 single crystals. The chemical composition of the metal organic sources was changed to optimize the processing condition associate to the deposition of the stoichiometric Y3a2Cu3O7-y. We report the superconducting transition temperature, surface morphology and chemical composition of the YBCO film surfaces.

• Advances in Energy Research
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• 제2권2호
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• pp.97-104
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• 2014

A co-spray deposition technique has been developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e., the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with F and Al have been successfully synthesized, in which F is incompatible with Al. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, $NH_4F$. The second solution contained the Zn and Al precursors, $Zn(O_2CCH_3)_2$ and $AlCl_3$. The deposition was carried out at $500^{\circ}C$ on soda-lime glass in air. A minimum sheet resistance, $55.4{\Omega}/{\square}$, was obtained for Al and F codoped ZnO films after vacuum annealing at $400^{\circ}C$, which was lower than singly-doped ZnO with either Al or F. The transmittance for the codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties for photovoltaic applications.

• 대한기계학회논문집A
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• 제41권2호
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• pp.103-109
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• 2017

AMM(Additive Metal Manufacturing)이라 호칭되는 3차원 금속 프린팅(metal 3-D printing) 공정은 금속분말(metal powder)을 적층 재료로 사용하여 기계적부품용 실형상 금속 파트(metallic parts)를 직접 조형하여 제조한다. 한편, 조형 파트형상의 STL모델에 존재하는 기하학적 오류들과 특징형상들의 특이성으로 인하여 조형 작업 중에 내부에 결함들이 포함된 실형상 파트가 조형될 가능성이 존재하게 되며 이로 인해 3차원 금속 프린팅 조형공정 자체의 신뢰성에 문제를 야기할 수 있다. 본 논문에서는 이러한 조형작업 중 발생할 수 있는 결함들을 미리 진단, 분석하고 수정하기 위하여 첫째, 조형 전에 STL 형상모델의 진단분석을 통하여 결함요소를 사전에 탐지하고 둘째, 적층 단면내 조형 공구 경로상에 실제로 포함된 결함들을 분석하고 이를 수정하기 위한 조형 파트 진단 및 조형 공구 경로 검증 연구방법을 제시하였다. 또한 DED(direct energy deposition) 공정을 기준으로 2가지 STL 형상파트 사례들에 대하여 제시한 연구방법의 case study를 수행하였다.

• Progress in Superconductivity
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• 제3권1호
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• pp.125-129
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• 2001

NiO buffer layers were deposited on texture Ni tapes fur YBCO coated conductors by MOCVD(metal organic chemical vapor deposition) method, using a single solution source. Variables were deposition temperature and flow rate of $0_2$carrier gas. At higher temperatures, The NiO(111) texture was well developed, but the NiO(200) texture was developed at low temperatures. The best result was obtained at the deposition temperature of$ 470^{\circ}C$ and the gas flow rate of 200 sccm. FWHM value of $\omega$-scan fur NiO(200) of the film and $\Phi$-scan for NiO(111) of the film was $4.2^{\circ}$ and $7^{\circ}$, respectively.