• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3600-3604
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• 2010

Rhodium(III)-$Cp^*$ complexes containing labile ligands, $[Cp^*RhCl_2]_2$, [$Cp^*Rh({\eta}^2-NO_3)$(OTf)], and $[Cp^*Rh(OH_2)_3](OTf)_2$, reacted with potential linking ligands [$L^1$ = (2-thiophene)-CH=N-N=CH-(2-thiophene); $L^2$ = (2-furan)-CH=N-N=CH-(2-furan)] to give two molecular compounds, [$Cp^*Rh(L^1)Cl_2$] (1) and [$Cp^*Rh({\eta}^2-NO_3)(L^1)$]$(OTf){\cdot}CH_2Cl_2$ ($2{\cdot}CH_2Cl_2$), and one 1-dimensioanl coordination polymer, $\{[Rh(L^2)]{\cdot}(OTf)}_{\infty}$ (3). Whereas one imine nitrogen atom within the ligand is coordinated to the Rh metal in compounds 1 and 2, both nitrogen atoms are bound to two neighboring Rh metals in compound 3 to lead to a 1-D chain polymer.

• Journal of Electrochemical Science and Technology
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• v.4 no.1
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• pp.1-18
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• 2013

Gallium is an important element in the production of a variety of compound semiconductors for optoelectronic devices. Gallium has a low melting point and is easily oxidized to give oxides of different compositions that depend on the conditions of solutions containing Ga. Gallium electrode reaction is highly irreversible in acidic media at the dropping mercury electrode. The passive film on a gallium surface is formed during anodic oxidation of gallium metal in alkaline media. Besides, some results in published reports have not been consistent and reproducible. An increase in the demand of intermetallic compounds and semiconductors containing gallium gives rise to studies on electrosynthesis of them and an increase of gallium concentration in the environment with various application of gallium causes the development of electroanalysis tools of Ga. It is required to understand the electrochemistry of Ga and to predict the electrochemical behavior of Ga to meet these needs. Any review papers related to the electrochemistry of gallium have not been published since 1978, when the review on the subject was published by Popova et al. In this study, the redox behavior, anodic oxidation, and electrodeposition of gallium, and trace determination of gallium by stripping voltammetries will be reviewed.

• Journal of Environmental Health Sciences
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• v.9 no.1
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• pp.1-13
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• 1983

This study was carried out to investigate nitrification in the main stream of the Naktong river for two times, 12-13 August and 23-26 September 1982. The results of this study were as follows : 1. The increase of nitrogen concentration was due to inflow of Geumho river, which was polluted by the municipal and industrial wastewater of Daegu city. 2. The rate constant of ammonia calculated for three reaches was high according to the stream flow and was eminently low in the reach from Goroung to Gangjung. (0.068-0.116 $day^{-1}$). This phenomena might be attributed to the sublethal or even lethal effect upon aquatic life by relatively low DO concentration and high heavy metal concentration. 3. DO consumption rate by nitrification was highest for the reach from Goroung to Daeam where was affected by Geumho river. (56.7-147.8%). This phenomena might be attributed to low DO concentration and high nitrogen concentration. Especially, the less stream flow was, the higher DO consumption was. And so, nitrification in the station where is low DO concentration, especially under the low flow condition, might cause more serious water quality management problem. Therefore, for the purpose of effective conservation of water quality in the Naktong river, it was suggested that We have more concern about the nitrogen compound, and more study on the nitrification phenomena.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.1
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• pp.31-35
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• 2003

Switch box is metal box and used for electric wire pipe in building. In manufacturing switch box, we need 5∼6 press machines, 5∼6 dies, 1 tapping machine. and 7∼8 operators. What matters is rise of manufacturing cost and operators' reluctance of working. To solve this problem, we modified the pre-existing die and developed handling mechanism, which leads to improve the manufacturing process. After the research and development, we could reduce the number of machines and workers needed in the process; 2 press machines, 2 dies, 1 tapping machine, and 1 operator. That means we can save labor and the number of operators needed, reduce manufacturing cost, and get the effect of import replacement.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1890-1892
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• 2005

Recently, high luminance and high efficiency were realized in OLEDs with multilayer structure including emitting materials such as metal-chelate complexes. New luminescent materials, [2- (2-hydroxyphenyl)-quinoline] (Zn(HPB)q), [(1,10-phenanthroline)- (8-hydroxyquinoline)] Zn(Phen)q was synthesized. Zn-Complexes have low molecular compound and thermal stability. The ionization potential(IP) and electron affinity(EA) of Zn-complexes were measured by cyclic-voltammetry(CV). The fundamental structure of the OLEDs was $ITO/{\alpha}$-NPD/Zn-Complex/Al and then we made device structure rightly in energy band gap. We using Zn(Phen)q as emitting layer and Zn(HPB)q as electron transport layer. We measured current density-voltage, luminance-voltage characteristics.

• Journal of Korea Foundry Society
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• v.20 no.1
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• pp.13-20
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• 2000

In the present study,($10%Al_2O_3+5%Si$)/AZ91 Mg hybrid composite was fabricated using the squeeze casting method. During squeeze casting, Molten Mg was infiltrated into the preform of $10%Al_2O_3+5%Si$ and reaction product of $Mg_2Si$ intermetallic compound was formed by the reaction between molten Mg and Si Powder. Microstructure has been observed and mechanical properties were evaluated for the reaction squeeze cast(RSC) hybrid composite. It was found that Si powder totally reacted with molten Mg to form $Mg_2Si$. Reinforcement($Al_2O_3$) and the reaction product ($Mg_2Si$) are fairly uniformly distributed in Mg Matrix for the squeeze cast hybrid composite. Mechanical Properties were improved with hybridization of reinforcements, namely higher hardness and enhanced wear resistance comparing squeeze cast($15%Al_2O_3$)/AZ91 Mg composite.

• Journal of Power Electronics
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• v.13 no.6
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• pp.1080-1089
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• 2013

In this paper, the superposition principle of a heat sink temperature rise is verified based on the mathematical model of a plate-fin heat sink with two mounted heat sources. According to this, the distributed coupling thermal impedance matrix for a heat sink with multiple devices is present, and the equations for calculating the device transient junction temperatures are given. Then methods to extract the heat sink thermal impedance matrix and to measure the Epoxy Molding Compound (EMC) surface temperature of the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) instead of the junction temperature or device case temperature are proposed. The new thermal impedance model for the power converters in Switched Reluctance Motor (SRM) drivers is implemented in MATLAB/Simulink. The obtained simulation results are validated with experimental results. Compared with the Finite Element Method (FEM) thermal model and the traditional thermal impedance model, the proposed thermal model can provide a high simulation speed with a high accuracy. Finally, the temperature rise distributions of a power converter with two control strategies, the maximum junction temperature rise, the transient temperature rise characteristics, and the thermal coupling effect are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.31-32
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• 2007

Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. An ITO was used as an anode, and $Li_2O$/Al was used as a cathode. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photocurrent is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. It was found that for 0.5nm thick $Li_2O$ layer built-in voltage is the higher than the others. It indicates that a very thin alkaline metal compound $Li_2O$ lowers an electron barrier height.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1274-1276
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• 1993

The silicon-nitride films formed by laser CVD method are used for passivating GaAs surfaces. The electrical Properties of metal-insulator-GaAs structure are studied to determined the interfacial characteristics by C-V curves and deep level transient spectroscopy(DLTS). The SiN films are photolysisly deposited from $SiH_4\;and\;NH_3$ in the range of $100^{\circ}C-300^{\circ}C$ on P type, (100) GaAs. The hysteresis is reduced and interface trap density is lowered to $10^{12}-10^{13}$ at $100^{\circ}C-200^{\circ}C$. The surface leakage current is studied too. The passivated GaAs have a little leakage current compared to non passivated GaAs.

• Tribology and Lubricants
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• v.25 no.1
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• pp.7-12
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• 2009

Coating brittle intermetallic compounds on metal can enlarge the range of their use. It is found that intermetallic compound coating layers made by only combustion synthesis in an electric furnace have porous multi-phase structures containing several intermediate phases, even though the coating layers show good wear resistance. In this study, dense $Ni_{3}Al$ single phase layer corresponding to the initial composition of the mixed powder is coated on two different ferrous materials by the diffusing treatment after combustion synthesis. After- ward, sliding wear behaviors of the coating layer are evaluated in comparison with that of the coating layer with porous multi-phase structure made by only combustion synthesis. As a result, the wear properties of the coating layer composed of dense $Ni_{3}Al$ single phase are considerably improved at the range of low sliding speed com- pared with that of the coating layer with porous multi-phase structure, particularly in the running-in wear region. This is attributed to the fact that wear of the coating layer is progressed by shearing as a sequence of adhesion, not by occurring of pitting on the worn surface due to having dense structure without pores.