• 제목/요약/키워드: memory surface

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기억으로서의 영상매체와 기억산업의 문화콘텐츠 - 중국 6세대 영화의 대항기억을 중심으로 - (Cultural Contents of Image Texts and Memory Industry as the Memory - Focused on the Counter Memory of the Sixth Generation Chinese Movies -)

  • 김계환
    • 한국콘텐츠학회논문지
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    • 제9권2호
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    • pp.163-172
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    • 2009
  • 문화콘텐츠가 문화산업의 중심으로 부상하면서, 콘텐츠와 이를 활용한 문화산업에 대한 관심이 어느 때 보다 높다. 문화는 기억을 중심으로 이루어지며, 기억을 배제한 문화란 존재할 수 없다. 기억은 개인의 차원을 넘어 집단적, 사회적 기억으로 작용한다. 또한 문화는 기억을 담지할 매체를 필연적으로 요구하는데, 최근의 영상텍스트는 새로운 기억매체로서 주목받고 있다. 이러한 점에서 이 논문은 사회 문화적 기억으로서 '기억'의 의미를 탐색해 보고, 중국 6세대 영화를 중심으로 사회 문화적 기억과 그것을 담지해내는 영상텍스트의 기억복원의 의미를 분석하는 데 초점을 두었다. 또한 '대항기억'으로서 '개인기억'의 문화적 의의를 탐색하고, 이를 통해 기억산업과 콘텐츠의 접합 가능성을 찾아보는 시도를 모색했다. 6세대 영화를 주목한 이유는 중국 당국이 제시하는 '공식기억'에 대항하며 '지하'에서 만들어졌던 이들 영화가 국제적인 영화제에서 괄목한 만한 성과를 획득해 나가고 있기 때문이다.

토양 내 저장 강수율을 활용한 국내 표층 토양수분 메모리 특성에 관한 연구 (Surface soil moisture memory using stored precipitation fraction in the Korean peninsula)

  • 김기영;이슬찬;이용준;연민호;이기하;최민하
    • 한국수자원학회논문집
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    • 제55권2호
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    • pp.111-120
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    • 2022
  • 물의 흐름을 제어하는 토양의 기능을 정량적으로 계산하기 위한 방법인 토양수분 메모리(soil moisture memory)는 토양에 도달한 강수가 저장되고 배출되기까지 평균적으로 체류하는 시간을 평가한다. 본 연구에서는 2019, 2020년 한반도 지역에서 강수와 토양수분 위성 기반 모델 산출물을 활용하여 표층(0~5 cm)토양에서의 토양수분 메모리를 산출하고 이를 활용하여 연구지역 내 토양수분 메모리의 시공간적인 분포를 지표면의 경사 및 토양의 특성과 함께 평가하였다. 토양수분 메모리를 특성분석을 위해 강수 사건에 따라 토양수분의 증가를 추적하여 저장 강수율(Fp(f))이라는 새로운 측정 지표를 활용하였다. 강수 발생 초기(3시간 후)에는 산맥을 기준으로 토양 내 저장 강수율이 우선적으로 감소하여 토양수분 메모리의 공간적인 편차가 컸으며 24시간 이후 전반적으로 편차가 감소하였다. 토양 내 저장 강수율은 경사가 증가할수록 감소하는 형태가 뚜렷하게 나타났으며 토양 입자 크기의 구성 비율에 따른 토양 내 수분의 배수 활동에 의한 영향을 확인할 수 있었다. 또한 수리전도도 증감에 기여하는 평균토양수분이 저장 강수율에 미치는 영향을 확인하였다. 본 연구 결과는 강수가 지면에 체류하는 시간에 대한 척도인 토양수분 메모리가 지표의 경사와 토양 특성과 갖는 관계를 규명하고 토양수분의 시공간적 변동성을 이해하는 데 기여할 것으로 기대된다.

콘크리트 보강재용 Fe-Mn-Si-Ni-Cr-TiC계 형상기억합금의 내식성 (Corrosion Resistance of Fe-Mn-Si-Ni-Cr-TiC Shape Memory Alloy for Reinforcement of Concrete)

  • 주재훈;이현준;김도형;이욱진;이정훈
    • 한국표면공학회지
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    • 제52권6호
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    • pp.364-370
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    • 2019
  • Fe-Mn-Si-Ni-Cr-TiC alloys have a shape memory property, recovering initial shape by heating. With an aim to improve a durability and stability of building and infrastructure, this Fe-based shape memory alloy (FSMA) can be employed to reinforce concrete structure with creation of compressive residual stress. In this work, corrosion resistance of FSMA was compared with general rebar and S400 carbon steel to evaluate the stability in concrete environment. Potentiodynamic polarization test in de-ionized water, tap-water and 3.5 wt.% NaCl solution with variations of pH was used to compare the corrosion resistance. FSMA shows better corrosion resistance than rebar and S400 in tested solutions. However, Cl-containing solution is critical to significantly reduce the corrosion resistance of FSMA. Therefore, though FSMA can be a promising candidate to replace the rebar and S400 for the reinforcement of concrete structure, serious cautions are required in marine environments.

Particle 입자에 의한 CMP 마이크로 스크래치 발생 규명 (Particle induced micro-scratch in CMP process)

  • 황응림;김형환;이훈;피승호;최봉호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.40-41
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    • 2005
  • In this study, we proposed CMP micro-scratches generated by contaminative particle which existed on the wafer surface prior to CMP process. The CMP micro-scratches are one of the slurry abrasive related damage. To reduce the micro-scratches, research efforts have been devoted to the optimization of slurry abrasive size distribution. In addition of slurry abrasive, it was found that contaminative particles also were major CMP micro-scratch source.

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QPlayer: Lightweight, scalable, and fast quantum simulator

  • Ki-Sung Jin;Gyu-Il Cha
    • ETRI Journal
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    • 제45권2호
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    • pp.304-317
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    • 2023
  • With the rapid evolution of quantum computing, digital quantum simulations are essential for quantum algorithm verification, quantum error analysis, and new quantum applications. However, the exponential increase in memory overhead and operation time is challenging issues that have not been solved for years. We propose a novel approach that provides more qubits and faster quantum operations with smaller memory than before. Our method selectively tracks realized quantum states using a reduced quantum state representation scheme instead of loading the entire quantum states into memory. This method dramatically reduces memory space ensuring fast quantum computations without compromising the global quantum states. Furthermore, our empirical evaluation reveals that our proposed idea outperforms traditional methods for various algorithms. We verified that the Grover algorithm supports up to 55 qubits and the surface code algorithm supports up to 85 qubits in 512 GB memory on a single computational node, which is against the previous studies that support only between 35 qubits and 49 qubits.

전사배향 TN-LCD의 액정배향 및 전기광학특성 (Liquid crystal alignment and EO performance of transcription-aligned TN-LCD)

  • 서대식;김진호
    • 한국전기전자재료학회논문지
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    • 제11권12호
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    • pp.1133-1138
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    • 1998
  • In this paper, we obtained the monodomain alignment of nematic liquid Crystal(NLC) in the cell fabricated by transcription alignment method on polyimide(PI) surface with side chain. It is considered that the LC alignment produced by the transcription alignment method is attributed to a memory effect of the NLC on PI surfaces. Also we observed that the generated pretilt angle of NLC is about $3.7^{\circ}$ with transcription alignment on PI surface. Next, we measured that the voltage-transmittance characteristics of transcription-aligned TN-LCD are almost same compared to rubbing-aligned TN-LCD. Also, we measured that the curve of transcription-aligned TN-LCD is less sharp than that of the rubbing-aligend TN-LCD in the decay time characteristics. It is considered that the response time characteristics of transcription-aligned TN-LCD are attributed to the weak anchoring strength between the LC molecules and the polymer surface.

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플라즈마 표면처리가 TiO2/TiO2-x 저항 변화형 메모리에 미치는 영향 (Effect of Plasma Treatment on TiO2/TiO2-x Resistance Random Access Memory)

  • 김한상;김성진
    • 한국전기전자재료학회논문지
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    • 제33권6호
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    • pp.454-459
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    • 2020
  • In this study, a TiO2/TiO2-x-based resistance variable memory was fabricated using a DC/RF magnetron sputtering system and ALD. In order to analyze the effect of oxygen plasma treatment on the performance of resistance random access memory (ReRAM), the TiO2/TiO2-x-based ReRAM was evaluated by applying RF power to the TiO2-x oxygen-holding layer at 30, 60, 90, 120, and 150 W, respectively. The ReRAM was fabricated, and the electrical and surface area performances were compared and analyzed. In the case of ReRAM without oxygen plasma treatment, the I-V curve had a hysteresis curve shape, but the width was very small, with a relatively high surface roughness of the oxygen-retaining layer. However, in the case of oxygen plasma treatment, the HRS/LRS ratio for the I-V curve improved as the applied RF power increased; stable improvement was also noted in the surface roughness of the oxygen-retaining layer. It was confirmed that the low voltage drive was not smooth due to charge trapping in the oxygen diffusion barrier layer owing to the high intensity ReRAM applied with an RF power of approximately 150 W.

상 변화 메모리 재료 내의 Ga 주입에 미치는 GaGe 스퍼터링 전력의 영향 (Effect of GaGe Sputtering Power on Ga Doping in Phase Change Memory Materials)

  • 정순원;이승윤
    • 한국전기전자재료학회논문지
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    • 제28권5호
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    • pp.285-290
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    • 2015
  • The phase change memory material is an active element in phase change memory and exhibits reversible phase transition behavior by thermal energy input. The doping of the phase change memory material with Ga leads to the increase of its crystallization temperature and the improvement of its amorphous stability. In this study, we investigated the effect of GaGe sputtering power on the formation of the phase change memory material including Ga. The deposition rate linearly increased to a maximum of 127 nm and the surface roughness remained uniform as the GaGe sputtering power increased in the range from 0 to 75 W. The Ga concentration in the thin film material abruptly increased at the critical sputtering power of 60 W. This influence of GaGe sputtering power was confirmed to result from a combined sputtering-evaporation process of Ga occurring due to the low melting point of Ga ($29.77^{\circ}C$).

Effect of magnetic field and gravity on thermoelastic fiber-reinforced with memory-dependent derivative

  • Mohamed I.A. Othman;Samia M. Said;Elsayed M. Abd-Elaziz
    • Advances in materials Research
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    • 제12권2호
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    • pp.101-118
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    • 2023
  • The purpose of this paper is to study the effects of magnetic field and gravitational field on fiber-reinforced thermoelastic medium with memory-dependent derivative. Three-phase-lag model of thermoelasticity (3PHL) is used to study the plane waves in a fiber-reinforced magneto-thermoelastic material with memory-dependent derivative. A gravitating magneto-thermoelastic two-dimensional substrate is influenced by both thermal shock and mechanical loads at the free surface. Analytical expressions of the considered variables are obtained by using Laplace-Fourier transforms technique with the eigenvalue approach technique. A numerical example is considered to illustrate graphically the effects of the magnetic field, gravitational field and two types of mechanical loads(continuous load and impact load).

3 차원 시간영역 전진속도 자유표면 Green 함수와 2 차 경계요소법을 사용한 선체의 방사포텐셜 수치계산 (Numerical Study of the Radiation Potential of a Ship Using the 3D Time-Domain Forward-Speed Free-Surface Green Function and a Second-Order BEM)

  • 홍도천;홍사영
    • 대한조선학회논문집
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    • 제45권3호
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    • pp.258-268
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    • 2008
  • The radiation potential of a ship advancing in waves is studied using the 3D time-domain forward-speed free-surface Green function and the Green integral equation. Numerical solutions are obtained by making use of the 2nd order BEM(Boundary Element Method) which make it possible to take account of the line integral along the waterline in a rigorous manner. The 6 degree of freedom motion memory functions of a hemisphere and the Wigley seakeeping model obtained by direct integration of the time-domain 3D potentials over the wetted surface are presented for various Froude numbers.