• IEMEK Journal of Embedded Systems and Applications
• /
• v.11 no.6
• /
• pp.335-341
• /
• 2016

As information technology advances rapidly, various smart devices are becoming an essential element in our lives. Smart devices are providing services to users through applications up on the operating system. Operating systems have a variety of rules, such as scheduling applications and controlling hardwares. Among those rules, it is significant to protect private information in the information-oriented society. Therefore, isolation task, that makes certain memory space separated for each application, should highly be guaranteed. However, modern operating system offers the function to access the memory space from other applications for the sake of debugging. If this ability is misused, private information can be leaked or modified. Even though the access authority to memory is strictly managed, there exist cases found exploited. In this paper, we analyze the problems of the function provided in the Android environment that is the most popular and opened operating system. Also, we discuss how to avoid such kind of problems and verify with experiments.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.2
• /
• pp.47-49
• /
• 2004

Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.

• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.33 no.3
• /
• pp.437-447
• /
• 2023

Memory protection has been researched for decades for program execution protection. ARM recently developed a newhardware security feature to protect memory that was applied to real hardware. However, there are not many hardware withhardware memory protection feature and research has not been actively conducted yet. We perform diagnostics on howandhow it works on real hardware, and on security, with a new hardware memory protection feature, named 'Pointer Authentication Code'. Through this research, it will be possible to find out the direction, use, and security of future hardware security technologies and apply to the program.

• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.34 no.2
• /
• pp.179-192
• /
• 2024

macOS presents challenges for memory data acquisition due to its proprietary system architecture, closed-source kernel, and security features such as System Integrity Protection (SIP), which are exclusive to Apple's product line. Consequently, conventional memory acquisition tools are often ineffective or require system rebooting. This paper analyzes the status and limitations of existing memory forensics research and tools related to macOS. We investigate methods for memory acquisition and analysis across various macOS versions. Our findings include the development of a practical memory acquisition and analysis process for digital forensic investigations utilizing OSXPmem and dd tools for memory acquisition without system rebooting, and Volatility 2, 3 for memory data analysis.

• Journal of information and communication convergence engineering
• /
• v.19 no.1
• /
• pp.22-28
• /
• 2021

Convolutional neural networks (CNNs) are one of the most frequently used artificial intelligence techniques. Among CNN-based applications, small and timing-sensitive applications have emerged, which must be reliable to prevent severe accidents. However, as the small and timing-sensitive systems do not have sufficient system resources, they do not possess proper error protection schemes. In this paper, we propose MATE, which is a low-cost CNN weight error correction technique. Based on the observation that all mantissa bits are not closely related to the accuracy, MATE replaces some mantissa bits in the weight with error correction codes. Therefore, MATE can provide high data protection without requiring additional memory space or modifying the memory architecture. The experimental results demonstrate that MATE retains nearly the same accuracy as the ideal error-free case on erroneous DRAM and has approximately 60% accuracy, even with extremely high bit error rates.

• Journal of the Korea Society of Computer and Information
• /
• v.26 no.11
• /
• pp.1-9
• /
• 2021

3D-NAND flash memory provides high capacity per unit area by stacking 2D-NAND cells having a planar structure. However, due to the nature of the lamination process, there is a problem that the frequency of error occurrence may vary depending on each layer or physical cell location. This phenomenon becomes more pronounced as the number of write/erase(P/E) operations of the flash memory increases. Most flash-based storage devices such as SSDs use ECC for error correction. Since this method provides a fixed strength of data protection for all flash memory pages, it has limitations in 3D NAND flash memory, where the error rate varies depending on the physical location. Therefore, in this paper, pages and layers with different error rates are classified into clusters through the K-means machine learning algorithm, and differentiated data protection strength is applied to each cluster. We classify pages and layers based on the number of errors measured after endurance test, where the error rate varies significantly for each page and layer, and add parity data to stripes for areas vulnerable to errors to provides differentiate data protection strength. We show the possibility that this differentiated data protection policy can contribute to the improvement of reliability and lifespan of 3D NAND flash memory compared to the protection techniques using RAID-like or ECC alone.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.674-676
• /
• 2008

An electrostatic discharge (ESD) or a noise supplied from the outside has an effect on communication between the timing controller (TCON) and the memory element (EEPROM) through the interface between the timing controller and the memory element in liquid crystal displays (LCD). Therefore, we must apply ESD protection methods to LCD operating circuits for a normal operation. Our ESD protection circuit is to prevent from bi-directional communication errors between TCON and EEPROM due to an electrostatic discharge (ESD).

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.21 no.3
• /
• pp.601-606
• /
• 2017

SRAM-based FPGAs mainly used to develop and implement high-performance circuits have SRAM-type configuration memory. Soft errors in memory devices are the main threat from a reliability point of view. Soft errors occurring in the configuration memory of FPGAs cause FPGAs to malfunction. SEM(Soft Error Mitigation) Controllers offered by Xilinx can mitigate the influence of soft errors in configuration memory. SEM Controllers use ECC(Error Correction Code) and CRC(Cyclic Redundancy Code) which are placed around the configuration memory to detect and correct the errors. The correction is done through a partial reconfiguration process. This paper presents the availability analysis of SRAM-based FPGAs against soft errors under the protection of SEM Controllers. Availability functions were derived and compared according to the correction capability of SEM Controllers of several different families of FPGAs. The result may help select an SRAM-based FPGA part and estimate the availability of FPGAs running in an environment where soft errors occur.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.15 no.5
• /
• pp.3121-3131
• /
• 2014

Vulnerabilities related to memory have been known as major threats to the security of a computer system. Actually, the number of attacks using memory vulnerability has been increased. Accordingly, various memory protection mechanisms have been studied and implemented on operating system while new attack techniques bypassing the protection systems have been developed. Especially, buffer overflow attacks have been developed as Return-Oriented Programing(ROP) and Jump-Oriented Programming(JOP) called Code Re-used attack to bypass the memory protection mechanism. Thus, in this paper, I analyzed code re-use attack techniques emerged recently among attacks related to memory, as well as analyzed various detection mechanisms proposed previously. Based on the results of the analyses, a mechanism that could detect various code re-use attacks on a binary level was proposed. In addition, it was verified through experiments that the proposed mechanism could detect code re-use attacks effectively.

• Smart Structures and Systems
• /
• v.4 no.2
• /
• pp.261-278
• /
• 2008

The results of the application of shape memory alloy (SMA) prestressing devices on an aqueduct are presented in this paper. The aqueduct was built in 1747 to provide water to the city of Larnaca and to its port. Because of its importance to the cultural heritage of Cyprus, the aqueduct has been selected as one of the case-study monuments in the project Wide-Range Non-Intrusive devices toward Conservation of Historical Monuments in the Mediterranean Area (WIND-CHIME). The Department of Antiquities of Cyprus, acting in a pioneering way, have given their permission to apply the devices in order to investigate their effectiveness in providing protection to the monument against probable catastrophic effects of earthquake excitation. The dynamic characteristics of the structure were determined in two separate occasions and computational models were developed that matched very closely the dynamic characteristics of the structure. In this paper the experimental setup and the measured changes in the dynamic characteristics of the monument after the application of the SMA devices are described.