• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.655-658
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• 1988

Interconnection network is to provide communication among functional modules. The interconnections considered are Generalized Cube networks. Two situations are examined: a memory module is equally likely to be addressed by a processor and a processor has a favorite memory. This paper proposes the effective condition of operation in interconnection network through performance evaluation by simulation.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.483-484
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• 2006

In this paper, we fabricated the organic bi-stable devices under the different condition from the other groups and analyzed the electrical characteristics. Then we investigated the effects of the device structure such as organic layer thickness, middle metal layer thickness and middle metal layer deposition rate on the memory characteristics.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.630-633
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• 2005

Some gases can be formed into hydrate by physical combination with water under appropriate temperature and pressure condition. Besides them, it was found that the pore size of the sediments can affect the formation and dissociation of hydrate. In this study, formation temperatures of carbon dioxide and methane hydrate have been measured using isobaric method to investigate the effects of flow rates of gases on formation condition of hydrate in porous rock samples. The flow rates of gases were controlled using a mass flow controller. To minimize Memory effect, system temperature increased for the dissociation of gas hydrates and re-established the initial saturation. The results show that the formation temperature of hydrate decreases with increasing the injection flow rate of gas. This indicates that the velocity of gas in porous media may act as kinds of inhibitor for the formation of hydrate.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.7 no.1
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• pp.34-40
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• 2007

Balasubramaniam and Muralisankar (2004) proved the existence and uniqueness of fuzzy solutions for the semilinear fuzzy integrodifferential equations with nonlocal initial condition. Park et al. (2006) found the sufficient condition of this system. Recently, Kwun et al. (2006) proved the existence and uniqueness of solutions for the semilinear fuzzy integrodifferential equations with nonlocal initial conditions and forcing term with memory in $E_N$. In this paper, we study the controllability for this system by using the concept of fuzzy number whose values are normal, convex, upper semicontinuous and compactly supported interval in $E_N$.

• Annual Conference on Human and Language Technology
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• 1999.10e
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• pp.335-342
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• 1999

The experiments reported here investigated whether seeing a speaker's face (visible speech) affects the perception and memory of Korean speech sounds. In order to exclude the possibility of top-down, knowledge-based influences on perception and memory, the experiments tested people with no knowledge of Korean. The first experiment examined whether visible speech (Auditory and Visual - AV) assists English native speakers (with no knowledge of Korean) in the detection of a syllable within a Korean speech phrase. It was found that a syllable was more likely to be detected within a phrase when the participants could see the speaker's face. The second experiment investigated whether English native speakers' judgments about the duration of a Korean phrase would be affected by visible speech. It was found that in the AV condition participant's estimates of phrase duration were highly correlated with the actual durations whereas those in the AO condition were not. The results are discussed with respect to the benefits of communication with multimodal information and future applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1069-1074
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• 2005

In this work, nano-needle structures ate formed to solve problem, related to low density of quantum dots for nano floating gate memory. Such structures ate fabricated and electrical properties' of MIS devices fabricated on the nano-structures are studied. Nano floating gate memory based on quantum dot technologies Is a promising candidate for future non-volatile memory devices. Nano-structure is fabricated by reactive ion etching using $SF_6$ and $O_2$ gases in parallel RF plasma reactor. Surface morphology was investigated after etching using scanning electron microscopy Uniform and packed deep nano-needle structure is established under optimized condition. Photoluminescence and capacitance-voltage characteristics were measured in $Al/SiO_2/Si$ with nano-needle structure of silicon. we have demonstrated that the nano-needle structure can be applicable to non-volatile memory device with increased charge storage capacity over planar structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• East Asian mathematical journal
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• v.34 no.1
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• pp.69-84
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• 2018

In this paper, we study the viscoelastic Kirchhoff type equation with a nonlinear source for each independent kernels h and g with respect to Volterra terms. Under the smallness condition with respect to Kirchhoff coefficient and the relaxation function and other assumptions, we prove the uniform decay rate of the Kirchhoff type energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.226-232
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• 2023

As a potential alternative to flash memory, HfO₂/Al₂O₃ stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO₂/Al₂O₃ stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat treatment and γ-ray and white x-ray treatment of such stacks. Compared to a single HfO₂ layer, the memory window of the 5-layered stack increased by 152.4% after O₂ annealing at ±12 V. The memory window enlarged with the increase in number of layers in the stack and the increase in the Al/Hf content in the stack. Furthermore, our comparison of the treatment of HfO₂/Al₂O₃ stacks with varying annealing temperatures revealed that an increased annealing temperature resulted in a wider storage window. The samples treated with O₂ and subjected to various γ radiation intensities displayed superior resistance. and the memory window increased to 12.6 V at ±16 V for 100 kGy radiation intensity compared to the untreated samples. It has also been established that increasing doses of white x-rays induced a greater number of deep defects. The optimization of stacking layers along with post-deposition treatment condition can play significant role in extending the memory window.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.47 no.5
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• pp.41-49
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• 2010

Being popularized the use of portable entertainment/information devices, the demand on flash memory has been also increased radically. In general, flash memory reveals various error patterns by the devices it is mounted, and thus the memory makers are trying to minimize error ratio in the final process through not only the electric test but also the data integrity test under the same condition as real application devices. This process is called an application-level memory test. Though currently various flash memory testing devices have been used in the production lines, most of the works related to memory test depend on the sensual abilities of human testers. In case of testing the flash memory for MP3 devices, the human testers are checking if the memory has some errors by hearing the audio played on the memory testing device. The memory testing process like this has become a bottleneck in the flash memory production line. In this paper, we propose an audio comparison technique to support the efficient flash memory test for MP3 devices. The technique proposed in this paper compares the variance change rate between the source binary file and the decoded analog signal and checks automatically if the memory errors are occurred or not.