• Title/Summary/Keyword: memory condition

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Effect of Saenggitang on Learning and Memory Ability in Mice

  • Han Yun-Jeong;Chang Gyu-Tae;Kim Jang-Hyun
    • The Journal of Korean Medicine
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    • v.25 no.4
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    • pp.51-60
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    • 2004
  • Objective : The effect Saenggitang (GT), which has been used for amnesia, in Oriental Medicine, on memory and learning ability, was investigated. Methods : Hot water extracts (HWE) of SGT were used for the studies. In passive avoidance performances (step through test), active avoidance performances (lever press test), Motor activity, pentobarbital-induced sleep, 20 and 50 mg/100g of SGT-HWE ameliorated the memory retrieval deficit induced by 40% ethanol. Results : The SGT-HWE did not affect the ambulatory activity of normal mice in normal condition. 20 and 50 mg/100g of SGT-HWE enhanced contextual fear memory, but not cued fear memory in a fear conditioning task, which requires the activation of the NMDA (N-methyl-D-aspartase) receptor. SGT-HWE did not affect the motor activity measured by the titling type ambulometer test performed immediately and 24 hr after the administration. SGT-HWE prolonged the sleeping time induced by 50 mg/kg pentobarbital in mice and decreased SMA (spontaneous motor activity) in active avoidance performances (lever press test). Conclusion : These results indicate that the SGT-HWE have an improving effect on the memory retrieval disability induced by ethanol and may act as a stimulating factor for activating the NMDA receptor. and the SGT-HWE has a tranquilizing and anti-anxiety action.

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Effects of Source Recall Conditions on the Relationships among Source Monitoring, Inhibitory Control, and Working Memory (출처 회상 조건이 출처 감찰과 억제적 통제, 작업 기억 간의 관계에 미치는 영향)

  • Lee, Seungjin
    • Korean Journal of Child Studies
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    • v.38 no.2
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    • pp.107-117
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    • 2017
  • Objective: Whereas some studies have suggested that source monitoring is significantly associated with working memory and inhibitory control, both of which are components of executive functioning, other studies have argued otherwise. The author of this study determined that such contradictory findings are a result of heterogeneity in the assessment methods for source monitoring. Therefore, this study aimed at exploring whether the relationships among source monitoring, working memory, and inhibitory control may be altered depending on the differences of source recall conditions. Methods: Eighty children aged 5-8 years saw interesting activities via two different sources. Their source memories on the activity were assessed subsequently. The children were assigned to either the "continuous" source recall group or "non-continuous" source recall group. Both groups participated in working memory and inhibitory control tasks. Results: The results showed that working memory was significantly related to source monitoring regardless of the condition of source recall (continuous vs non-continuous). On the other hand, inhibitory control was significantly associated with source monitoring only in the non-continuous source recall group. Conclusion: Based on these results, the author discussed the need to consider the conditions of source recall during investigative interviews with children in order to induce accurate source monitoring, as part of our effort to interpret the inconsistency of results in the literature and to draw potential applications.

Performance Improvement of Current Memory for Low Power Wireless Communication MODEM (저전력 무선통신 모뎀 구현용 전류기억소자 성능개선)

  • Kim, Seong-Kweon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.3 no.2
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    • pp.79-85
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    • 2008
  • It is important to consider the life of battery and low power operation for various wireless communications. Thus, Analog current-mode signal processing with SI circuit has been taken notice of in designing the LSI for wireless communications. However, in current mode signal processsing, current memory circuit has a problem called clock-feedthrough. In this paper, we examine the connection of CMOS switch that is the common solution of clock-feedthrough and calculate the relation of width between CMOS switch for design methodology for improvement of current memory. As a result of simulation, when the width of memory MOS is 20um, ratio of input current and bias current is 0.3, the width relation in CMOS switch is obtained with $W_{Mp}=5.62W_{Mn}+1.6$, for the nMOS width of 2~6um in CMOS switch. And from the same simulation condition, it is obtained with $W_{Mp}=2.05W_{Mn}+23$ for the nMOS width of 6~10um in CMOS switch. Then the defined width relation of MOS transistor will be useful guidance in design for improvement of current memory.

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The Consolidation and Comparison Processes in Visual Working Memory Tested under Pattern-Backward Masking (역행 차폐를 통해 본 시각작업기억의 공고화 및 비교처리 과정)

  • Han, Ji-Eun;Hyun, Joo-Seok
    • Korean Journal of Cognitive Science
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    • v.22 no.4
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    • pp.365-384
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    • 2011
  • A recent study of visual working memory(VWM) under a change detection paradigm proposed an idea that the comparison process of VWM representations against incoming perceptual inputs can be performed more rapidly than the process of forming durable memory representations into VWM. To test this hypothesis, we compared the size of interference effect caused by pattern-backward masks following after either the sample(sample-mask condition) or test items (test-mask condition). In Experiment 1, subjects performed a color change detection task for four colored-boxes, and pattern masks with mask-onset asynchronies(MSOA) of either 64ms or 150ms followed each item location either after the sample or after the test items. The change detection accuracy was both comparable in the sample-mask condition regardless of the MSOAs, whereas the accuracy in the trials with a MSOA of 150ms was substantially higher than the MSOA of 65ms in the test-masking condition. In Experiment 2, we manipulated setsizes to 1, 2, 3, 4 items and also MSOAs to 117ms, 234ms, 350ms, 484ms and compared the pattern of interference across a variety of setsize and MSOA conditions. The sample-mask condition yielded a pattern of masking interference which became more evident as the setsize increases and as the MSOA was shorter. However, this pattern of interference was less apparent in the test-mask condition. These results indicate that the comparison process between remembered items in VWM and perceptual inputs is less vulnerable to interference from pattern-backward masking than VWM consolidation is, and thus support for the recent idea that the comparison process in VWM can be performed very fast and accurately.

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The Development of Expert System for Strength Evaluation of TiNi Fiber Reinforced Al Matrix Composite (TiNi/Al기 형상기억복합재료의 강도평가를 위한 전문가시스템의 개발)

  • Park, Young-Chul;Lee, Dong-Hwa;Park, Dong-Sung
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.28 no.8 s.227
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    • pp.1099-1108
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    • 2004
  • In this paper, a study on the development of expert system for Al matrix composite with shape memory alloy fiber is performed to evaluate termomechanical behavior and mechanical properties. Expert system is very useful computer-based analysis system designed to make analysis technique and knowledge conveniently available to a lot of fabricable condition. In the developed system, it is possible to predict termomechanical behavior and mechanical properties for other composite with shape memory alloy fiber. The smartness of the shape memory alloy is given due to the shape memory effect of the TiNi fiber which generates compressive residual stress in the matrix material when heated after being prestrained. For finite element analysis, an analytical model is assumed two dimensional axisymmetric model compared of one fiber and the matrix. To evaluate the strength of composite using FEM, the concept of smart composite was simulated on computer Thus, in this paper, the FEA was carried out at two critical temperature conditions; room temperature and high temperature(363k). The finite element analysis result was compared with the test result for the analysis validity.

Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell

  • Cho, Seong-Jae;Park, Il-Han;Kim, Tae-Hun;Lee, Jung-Hoon;Lee, Jong-Duk;Shin, Hyung-Cheol;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.3
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    • pp.195-203
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    • 2005
  • Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is proposed to overcome the short channel effects and to increase the memory density. We need more complex voltage schemes for DG MOSFET devices. In view of peripheral circuits driving memory cells, one should consider various voltage sources used for several operations. It is one of the key issues to minimize the number of voltage sources. This criterion needs more caution in considering a DG nonvolatile memory cell that inevitably requires more number of events for voltage sources. Therefore figuring out the permissible range of operating bias should be preceded for reliable operation. We found that reliable operation largely depends on the depletion conditions of the silicon channel according to charge amount stored in the floating gates and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2D numerical simulation tool as the device simulator.

A Study on Optimization of Fourth-Order Fading Memory Filter under the Highly Dynamic Motion of Both Own Ship and Target

  • Pan, Bao-Feng;Jeong, Tae-Gweon
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2017.11a
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    • pp.145-147
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    • 2017
  • Tracking filter plays a key role in accurate estimation and prediction of maneuvering vessel's dynamics. The third-order ${\alpha}-{\beta}-{\gamma}$ filter is one of the special cases of the general solution provided by the Kalman filter. Fading memory algorithm performs a better performance in numerous of ${\alpha}-{\beta}-{\gamma}$ filter algorithms. This study aims to optimize the fourth-order fading memory algorithm ${\alpha}-{\beta}-{\gamma}-{\eta}$ filter, which is extended form ${\alpha}-{\beta}-{\gamma}$ filter, to get much more accurate position of high dynamic target on the condition that the own ship is also high dynamic.

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Design and Implementation of a Main Memory Index Structure in a DBMS

  • Bae, Duck-Ho;Kim, Jong-Dae;Park, Se-Mi;Kim, Sang-Wook
    • International Journal of Contents
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    • v.3 no.3
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    • pp.1-5
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    • 2007
  • The main memory DBMS (MMDBMS) efficiently supports various database applications that require high performance since it employs main memory rather than disk as a primary storage. An index manager is an essential sub-component of a DBMS used to speed up the retrieval of objects from a large volume of a database in response to a certain search condition. Previous research efforts on indexing proposed various index structures. However, they hardly dealt with the practical issues occurred in implementing an index manager on a target DBMS. In this paper, we touch these issues and present our experiences in developing the index manager. The main issues are (1) compact representation of an index entry, (2) support of variable-length keys. (3) support of multiple-attribute keys, and (4) support of duplicated keys.

An approach for modelling fracture of shape memory alloy parts

  • Evard, Margarita E.;Volkov, Alexander E.;Bobeleva, Olga V.
    • Smart Structures and Systems
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    • v.2 no.4
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    • pp.357-363
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    • 2006
  • Equations describing deformation defects, damage accumulation, and fracture condition have been suggested. Analytical and numerical solutions have been obtained for defects produced by a shear in a fixed direction. Under cyclic loading the number of cycles to failure well fits the empirical Koffin-Manson law. The developed model is expanded to the case of the micro-plastic deformation, which accompanies martensite accommodation in shape memory alloys. Damage of a shape memory specimen has been calculated for two regimes of loading: a constant stress and cyclic variation of temperature across the interval of martensitic transformations, and at a constant temperature corresponding to the pseudoelastic state and cyclic variation of stress. The obtained results are in a good qualitative agreement with available experimental data.

Characteristics of Programming on Analog Memory Cell Fabricated in a 0.35$\mu{m}$Single Poly Standard CMOS Process (0.35$\mu{m}$ 싱글폴리 표준 CMOS 공정에서 제작된 아날로그 메모리 셀의 프로그래밍 특성)

  • 채용웅;정동진
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.53 no.6
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    • pp.425-432
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    • 2004
  • In this paper, we introduce the analog memory fabricated in a 0.35${\mu}{\textrm}{m}$ single poly standard CMOS process. We measured the programming characteristics of the analog memory cell such as linearity, reliability etc. Finally, we found that the characteristics of the programming of the cell depend on the magnitude and the width of the programming pulse, and that the accuracy of the programming within 10mV is feasible under the optimal condition. In order to standardize the characteristics of the cell, we have investigated numbers of cells. Thus we have used a program named Labview and a data acquisition board to accumulate the data related to the programming characteristics automatically.