• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.191-193
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• 2005

Flash memories are one of best media to support portable computer's storages. However, we need to improve traditional data management scheme due to the relatively slow characteristics of flash operation as compared to RAM memory. In order to achieve this goal, we devise a new scheme called Flash Two Phase Locking (F2PL) scheme for efficient data processing. F2PL improves transaction performance by allowing multi version reads and efficiently handling slow flash write/erase operation in lock management process.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.75-78
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• 2003

An ideal semiconductor memory technology would combine or unify the attractive features of these technologies without acquiring any of the unattractive features. Such a memory technology, Phase Change RAM is now being developed using the class of elements known as chalcogenides. It is expected that this technology will eventually allow chips that have SRAM speed, DRAM cost, and Flash power characteristics and non-volatility.

• 전기의세계
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• v.26 no.2
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• pp.78-83
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• 1977

The Newton-Raphson method has now gained widespread popularity in Load-flow calculationes. In this paper programming is developed with aims to improve the convergence characteristics, speed and memory requirements in the above method. The method of Load-flow calculations is performed by employing the MW-O/MVAR-V decoupling principle. To reduce the memory requirements and improve the speed of calculation the programming of the Optimally Ordered Triangular Factorization method is developed. Besides this, other measures are taken to reduce memory requirements and computing time and to improve reliability. KECO'S 48 Bus system was tested and the method suggested in this paper was proved to be faster than any other methods.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.21-40
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• 2006

[ ${\Box}$ ] Opportunities for PRAM Nearly ideal memory characteristics Potential for high density & low cost memory ${\Box}$ Technical Challenges Writing current reduction is the most urgent issue. ${\to}$ chalcogenide, programming volume, current density, heat loss control Improvement of writing speed, reliability ${\Box}$ Prospects (PRAM as a Mainstream Memory) Evenn, We have demonstrated 256Mb PRAM Realization of high density and low cost PRAM with good reliability will be key succss factor. We need to develop PRAM specific applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.800-803
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• 2002

The MONOS capacitor are fabricated to investigate the carrier trapping due to Fowler-Nordheim tunneling injection. The carrier trapping in scaled multi-dielectric(ONO) depends on the nitride and Op oxide thickness under Fowler_Nordheim tunneling injection. Carriers captured at nitride film could not escape from nitride to gate, but be captured at top oxide and nitride interface traps because of barrier height of top oxide. Therefore, it is expected that the MONOS memory devices using multi dielectric films enhance memory effect and have a long memory retention characteristic.

• 한국전자현미경학회:학술대회논문집
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• 2001.11a
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• pp.92-96
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.231-232
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• 2016

We have fabricated the nc-Si, IGZO based nonvolatile memory TFTs using mobile protons, which can be generated by simple hydrogen insertion process via H-NB treatment at room temperature. The TFT devices above exhibited reproducible hysteresis behavior, stable ON/OFF switching, and non-volatile memory characteristics. Also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and our modified H-NB CVD. The room temperature proton-insertion process can reveal flexible inorganic based all-in-one display panel including driving circuit and memory circuit.

• Journal of Ocean Engineering and Technology
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• v.6 no.1
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• pp.87-95
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• 1992

Recently, the robot actuator worked by the driving recovery-force of the thermo elastic martensitic transformation of shape memory alloys(SMA) has been studied. In general, such a SMA actuator necessitates a number of cyclic repeated motion, so that the investigation of gradual decrease of recovery force with repeated motion cycle as well as the prevention of such a degradation of shape memory effect(SME) are very important for the actual use of a robot actuator. However, such research and discussions about the degradation of SME are very few up to the present. Therefore, in this study, the characteristics of the cyclic deformation and degradation of SME of Ti-Ni alloy would be investigated and discussed in detail by current heat type fatigue tester, which is a newly designed fatigue tester by author. In addition, we will establish a new design concept for robot actuator from these result.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.103-104
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• 2006

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the reset current and temperature profile of PRAM cells with bottom electrode were calculated by the numerical method.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.10 no.4
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• pp.115-120
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• 2011

Recently flash memory is widely used in various mobile devices as storage medium. Nonvolatile memory can be divided into two categories: NAND- and NOR-type flash memory. NOR flash memory is mainly used to store instruction codes for operation; while NAND for data storage. However, NAND does show more economical benefits, that is, it is approximately 30~40% cheaper than NOR flash. Therefore it can be useful to improve NAND flash performance by replacing NOR flash with NAND flash combining with various buffer systems.