P-RAM 기술의 전망

  • 정홍식 (삼성전자 차세대연구2팀)
  • Published : 2006.05.01

Abstract

[ ${\Box}$ ] Opportunities for PRAM Nearly ideal memory characteristics Potential for high density & low cost memory ${\Box}$ Technical Challenges Writing current reduction is the most urgent issue. ${\to}$ chalcogenide, programming volume, current density, heat loss control Improvement of writing speed, reliability ${\Box}$ Prospects (PRAM as a Mainstream Memory) Evenn, We have demonstrated 256Mb PRAM Realization of high density and low cost PRAM with good reliability will be key succss factor. We need to develop PRAM specific applications.

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