• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.750_751
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• 2009

This paper deals with the PM performance evaluations in a pole changing memory motor (PCMM) using a coupled transient finite element method (FEM) and Preisach modeling, which is presented to analyze the magnetic characteristics of permanent magnets. The focus of this paper is the dynamic characteristics evaluation relative to magnetizing direction and the pole number of machine on redemagnetization condition in a pole changing memory motor

• Smart Structures and Systems
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• v.4 no.2
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• pp.261-278
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• 2008

The results of the application of shape memory alloy (SMA) prestressing devices on an aqueduct are presented in this paper. The aqueduct was built in 1747 to provide water to the city of Larnaca and to its port. Because of its importance to the cultural heritage of Cyprus, the aqueduct has been selected as one of the case-study monuments in the project Wide-Range Non-Intrusive devices toward Conservation of Historical Monuments in the Mediterranean Area (WIND-CHIME). The Department of Antiquities of Cyprus, acting in a pioneering way, have given their permission to apply the devices in order to investigate their effectiveness in providing protection to the monument against probable catastrophic effects of earthquake excitation. The dynamic characteristics of the structure were determined in two separate occasions and computational models were developed that matched very closely the dynamic characteristics of the structure. In this paper the experimental setup and the measured changes in the dynamic characteristics of the monument after the application of the SMA devices are described.

• Proceedings of the KIEE Conference
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• summer
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• pp.905-907
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• 2004

This paper deals with the PM performance evaluations in a variable flux memory motor (VFMM) using a coupled finite element method (FEM) and Preisach modeling, which is presented to analyze the magnetic characteristics of permanent magnets. The focus of this paper is the operation characteristics evaluation relative to magnetizing direction and quantity of permanent magnets on re-, demagnetization condition in a variable flux memory motor(VFMM)

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1003-1004
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• 2007

This paper deals with the PM performance evaluations in a variable flux memory motor (VFMM) using a coupled finite element method (FEM) and Preisach modeling, which is presented to analyze the magnetic characteristics of permanent magnets. The focus of this paper is the operation characteristics evaluation relative to magnetizing direction and quantity of permanent magnets on redemagnetization condition in a variable flux memory motor(VFMM).

• The Korean Journal of Rehabilitation Nursing
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• v.1 no.1
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• pp.61-71
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• 1998

Defining prediction variables related to metamemory for the adults in aging process has worthwhile meaning from the perspective that the produced results can be helpful to reducing the difficulty of memorizing efforts and it can also enhance quality of life of aged. This study attempted to analysis relationship between perceived health status, depression, memory self-efficacy and meta memory for the subjects of middle age and old age adults. This study was designed by adopting descriptive correlational analysis method for the 468 middle and old age adults who are living in Seoul. Samples were selected by convenience sampling. Data collection was done over 1 month period in june 1998. The instruments used in this study were health status measuring scale including depression measuring scale, memory self efficacy measuring scale and metamemory measuring scale which were verified for reliability. Data collected were analized by using SPSS for frequency, Peason correlation, t-test and ANOVA according to the variables character and the study purposes. Results of the study were as follows. 1. Relationship between perceived health status, depression, memory self-efficacy and metamemory. Relational analyses between perceived health status, depression, memory self-efficacy and metamemory supported the hypotheses of 1st, 2nd and 3rd(p < .01). These results suggested that the aged perceived great health status then their memory self-efficacy, and metamemory showed the high scores. In the case of depression when its level became decreased metamemory was inclined to increased. Thus, it is identified that strong relationship exists between these variables. 2. Perceived health status, depression, memory self-efficacy by subject's general characteristics. Scores of perceived health status were high in the group of man compared to the group of women, and also highly educated group showed great perceived health status. Group of persons having occupation showed high score of perceived health status and low depression score. The score of memory self-efficacy and metamemory showed higher in the middle aged than the old aged. The high scores of memory self-efficacy and metamemory were found in the group of highly educated people and who have continuing education. The high scores of memory self-efficacy were found in the group of persons having their job and high metamemory scores found in the group of persons having religion. In summary, the greater perceived health status and memory self-efficacy, the more metamemory scores were likely increased and the more depression level was decreased, the more metamemory was likely increased. Also it was found that general characteristics like educational level, continuing education and religion influenced the metamemory of the aged. Therefore, prevention the aged from getting depression and activation of health promotion are needed to delay time of memory loss.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.7-8
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• 2008

The memory characteristics of charge trap flash (CTF) with $HfO_2$ charge trap layer were investigated. Especially, we focused on the effects of tunnel barrier engineering consisted of $SiO_2/Si_3N_4/SiO_2$ (ONO) stack or $Si_3N_4/SiO_2/Si_3N_4$ (NON) stack. The programming and erasing characteristics were significantly enhanced by using ONO or NON tunnel barrier. These improvement are due to the increase of tunneling current by using engineered tunnel barrier. As a result, the engineered tunnel barrier is a promising technique for non-volatile flash memory applications.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1226-1227
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• 2008

In this study, a single p-type Si nanowire - Au nanoparticles nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of p-type Si nanowire-based field effect transistor (FET) devices with Au nanoparticles embedded in the $Al_2O_3$ gate materials and without the Au nanoparticles. Drain current versus gate voltage ($I_{DS}-V_{GS}$) characteristics of a single p-type Si nanowire - Au nanoparticle NFGM device show counterclockwise hysteresis loops with the threshold voltage shift of ${\Delta}V_{th}$= 3.0 V. However, p-type Si nanowire based top-gate device without Au nanoparticles does not exhibit a threshold voltage shift. This behavior is ascribed to the presence of the Au nanoparticles, and is indicative of the trapping and emission of electrons in the Au nanoparticles.

• Journal of Korea Foundry Society
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• v.29 no.5
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• pp.187-191
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• 2009

Microstructures and shape memory characteristics of $Ti_{50}Ni_{20}Cu_{30}$ alloy strips fabricated by arc melt overflow have been investigated by means of XRD, optical microscopy and DSC. The microstructure of as-cast strips exhibited columnar grains normal to the strip surface. X-ray diffraction analysis showed that one-step martensitic transformation of B2-B19 occurred in the alloy strips. According to the DSC analysis, it was known that the martensitic transformation temperature ($M_s$) of B2 $\rightarrow$ B19 in $Ti_{50}Ni_{20}Cu_{30}$ strip is $57^{\circ}C$. During thermal cyclic deformation with the applied stress of 60 MPa, transformation hysteresis and elongation associated with the B2-B19 transformation were observed to be $3.7^{\circ}C$ and 1.6%, respectively. The as-cast strip of $Ti_{50}Ni_{20}Cu_{30}$ alloy also showed a superelasticity and its stress hysteresis was as small as 14 MPa. These mechanical properties and shape memory characteristics of the alloy strips were ascribed to B2-B19 transformation and the controlled microstructures produced by rapid solidification of the arc melt overflow process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.