• 한국환경과학회지
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• 제27권11호
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• pp.1023-1028
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• 2018

Shape memory materials are widely used in high-tech industries. Although shape memory polymers have been developed, they have a disadvantage, only unidirectional resilience. Shape memory polymers with bi-directional recovery resilience have been actively studied. In this study, a bidirectional shape memory polyurethane was synthesized using poly(${\varepsilon}$-caprolactone) diol, methylene dicyclohexyl diisocyanate, and hydroxyethyl acrylate. The first physical curing occurred between hard segments and hydrogen bondings when the solution was dried. The second curing in acrylate groups was performed by UV exposure. A degree of curing was analyzed by infrared spectroscopy. The shape memory properties of 2 step-cured polyurethanes were investigated as a function of UV curing time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.153-153
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• 2009

We investigated the dependence of the memory margin of the Cap-less memory cell on the strain of top silicon channel layer and also compared kink effect of strained Cap-less memory cell with the conventional Cap-less memory cell. For comparison of the characteristic of the memory margin of Cap-less memory cell on the strain channel layer, Cap-less transistors were fabricated on fully depleted strained silicon-on-insulator of 0.73-% tensile strain and conventional silicon-on-insulator substrate. The thickness of channel layer was fabricated as 40 nm to obtain optimal memory margin. We obtained the enhancement of 2.12 times in the memory margin of Cap-less memory cell on strained-silicon-on-insulator substrate, compared with a conventional SOI substrate. In particular, much higher D1 current of Cap-less memory cell was observed, resulted from a higher drain conductance of 2.65 times at the kink region, induced by the 1.7 times higher electron mobility in the strain channel than the conventional Cap-less memory cell at the effective field of 0.3MV/cm. Enhancement of memory margin supports the strained Cap-less memory cell can be promising substrate structures to improve the characteristics of Cap-less memory cell.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권3호
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.44-47
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• 1991

Electron injection and memory retention chracteristics of the MNOS devices with thin oxide layer of 23${\AA}$ thick and silicon nitride layer of 1000${\AA}$ thick which are fabricated for this experiment. As a result, pulse amplitude increase oxide current is dominated in linearly increasing region of $\Delta$V$\_$FB/the decreasing region after saturation was due to the increased silicon nirtide current. In low pulse ampiltude $\Delta$V$\_$FB/ is not variated on temperature, but as temperature and pulse amplitude increase. $\Delta$V$\_$FB/ is decreased after saturation. And the decay rate during 10$^4$sec after electron injection was ohiefly dominated by the back tunneling of emission from memory trap to silicon. Memory retention characteristics in V$\_$FB/ stage was better than that of OV retention regardless of injection conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.13-13
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• 2010

In this paper, the electrical characteristics of Fin-type SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) flash memory and Planar-type SONOS flash memory are analyzed. Compared to the Planar-type SONOS device, Fin-type SONOS device shows a good short channel effect immunity. Moreover, memory characteristics such as PIE speed, Endurance and Retention of FinFET SONOS flash are batter than that of conventional Planar-type SONOS flash memory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.26-27
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• 2006

To develop tera-bit level SONOS flash memories, SONOS unit memory and 64 bit flash arrays are fabricated. The unit cells have both channel length and width of 30nm. The NAND & NOR arrays are fabricated on SOI wafer and patterned by E-beam. The unit cells represent good write/erase characteristics and reliability characteristics. SSL-NOR array have normal write/erase operation. These researches are leading the realization of Tera-bit level non-volatile nano flash memory.

• 대한임베디드공학회논문지
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• 제6권6호
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• pp.383-391
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• 2011

As we know the effects of cache memory research, instruction and data caches can be separated for higher performance with Harvard CPUs. In this paper, we shows the efficiency of buffer system in the instruction and data flash storage medium. And we analyzed characteristics of the data and instruction flash and evaluated the performance. Finally, we propose the best buffer structure with an optimal block size and buffer size for the instruction and data flash.

• Journal of Computing Science and Engineering
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• 제8권3호
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• pp.157-172
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• 2014

Contemporary embedded systems often use NAND flash memory instead of hard disks as their swap space of virtual memory. Since the read/write characteristics of NAND flash memory are very different from those of hard disks, an efficient page replacement algorithm is needed for this environment. Our analysis shows that temporal locality is dominant in virtual memory references but that is not the case for write references, when the read and write references are monitored separately. Based on this observation, we present a new page replacement algorithm that uses different strategies for read and write operations in predicting the re-reference likelihood of pages. For read operations, only temporal locality is used; but for write operations, both write frequency and temporal locality are used. The algorithm logically partitions the memory space into read and write areas to keep track of their reference patterns precisely, and then dynamically adjusts their size based on their reference patterns and I/O costs. Without requiring any external parameter to tune, the proposed algorithm outperforms CLOCK, CAR, and CFLRU by 20%-66%. It also supports optimized implementations for virtual memory systems.

• 한국방송∙미디어공학회:학술대회논문집
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• 한국방송공학회 2009년도 IWAIT
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• pp.258-262
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• 2009

In this paper, we propose an effective memory reduction algorithm to reduce the amount of reference frame buffer and memory bandwidth in video encoder and decoder. In general video codecs, decoded previous frames should be stored and referred to reduce temporal redundancy. Recently, reference frames are recompressed for memory efficiency and bandwidth reduction between a main processor and external memory. However, these algorithms could hurt coding efficiency. Several algorithms have been proposed to reduce the amount of reference memory with minimum quality degradation. They still suffer from quality degradation with fixed-bit allocation. In this paper, we propose an adaptive block-based min-max quantization that considers local characteristics of image. In the proposed algorithm, basic process unit is $8{\times}8$ for memory alignment and apply an adaptive quantization to each $4{\times}4$ block for minimizing quality degradation. We found that the proposed algorithm could improve approximately 37.5% in coding efficiency, compared with an existing memory reduction algorithm, at the same memory reduction rate.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.483-484
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• 2006

In this paper, we fabricated the organic bi-stable devices under the different condition from the other groups and analyzed the electrical characteristics. Then we investigated the effects of the device structure such as organic layer thickness, middle metal layer thickness and middle metal layer deposition rate on the memory characteristics.