• Title/Summary/Keyword: memories

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Effects of storing defocused Fourier plane holograms in three-dimensional holographic disk memories (디스크형 3차원 홀로그래피 메모리에서 비초점 Fourier 면 홀로그램의 저장 효과)

  • 장주석;신동학
    • Korean Journal of Optics and Photonics
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    • v.12 no.1
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    • pp.61-66
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    • 2001
  • Defocused Fourier plane holograms are stored in disk-type holographic memories where thin recording media are used, the areal storage density per hologram and the intensity uniformity of the signal beam at the recording plane are studied. As the pixel pitch of the spatial light modulator that represents binary data increases, the storage density per hologram increases if exact Fourier holograms are stored. When defocused Fourier plane holograms are stored, however, we show that there exists an optimal pixel pitch that maximizes the area storage density per hologram in general, to increase the areal storage density per hologram, f/# of the Fourier transform lens that focuses the data image should be as small as possible. In this case, not only the intensity distribution at the recording plane but also the recording area becomes very sensitive to the degree of defocusing. Therefore, even if the exact Fourier plane holograms are stored, the defocusing effect owing to the medium thickness should be taken into account to achieve the maximal areal storage density per hologram.logram.

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A Study on Psychophysiology and Psychopathology of Korean Medicine -Focus on Emotion and Thought in Huangdineijing (한의학의 정신 생리와 병리에 대한 소고 -황제내경의 오신, 칠정을 중심으로-)

  • Choi, Woo-Jin
    • Journal of Oriental Neuropsychiatry
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    • v.29 no.1
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    • pp.21-34
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    • 2018
  • Objectives: The purpose of this study is to understand the theories about the psychophysiology and psychopathology of Korean Medicine. Methods: The concepts and functions of spirit (神), soul (魂魄), five spirits (五神), and seven emotions (七情) occurring in the Huangdineijing have been interpreted, and the correlation between thought and emotion considered. Results and Conclusions: (1) Spirit (神) refers to the source and discipline of vital activity and mental activity. (2) With soul (魂魄), ethereal soul (魂) manifests itself as the mental process, and corporeal soul (魄) as the physical sensory interaction, such as the nervous system. (3) In the five spirits, ethereal soul (魂) is the recognition process of drawing out memories. Spirit (神) is the process of creative thought. Cognition (意) is the ability to recognize and integrate information. Corporeal soul (魄) is the process of selecting what is important and choosing it. Will (志) is the process of storing memories. Ethereal soul (魂) and corporeal soul (魄) of the five spirits (五神) and soul (魂魄) use the same characters, but the meaning differs. Also, spirit (神) and the spirit (神) in five spirits (五神) are the same character, but, because the meaning is different, they need to be interpreted according to the context. (4) Heart (心), Cognition (意), Will (志), Thought (思), Consideration (慮), and Wisdom(智) are all cognitive processes, like perception, recognition, and thinking. (5) Psychopathology is when excessive emotion affects the five viscera, harming the Energy (氣) and Blood (血) and eventually affecting the five spirits, which causes problems in thinking. Therefore, for healthy mental functioning, not only must the emotions be regulated so that they do not become excessive, but the five viscera also need to be kept healthy.

Nucleation Enhancing Effect of Different ECR Plasmas Pretreatment in the RUO2 Film Growth by MOCVD (ECR플라즈마 전처리가 RuO2 MOCVD시 핵생성에 끼치는 효과)

  • Eom, Taejong;Park, Yunkyu;Lee, Chongmu
    • Journal of the Korean Ceramic Society
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    • v.42 no.2 s.273
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    • pp.94-98
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    • 2005
  • $RuO_2$ is widely studied as a lower electrode material for high dielectric capacitors in DRAM (Dynamic Random Access Memories) and FRAM (Ferroelectric Random Access Memories). In this study, the effects of hydrogen, oxygen, and argon Electron Cyclotron Resonance (ECR) plasma pretreatments on deposited by Metal Organic Chemical Vapor Deposition (MOCVD) $RuO_2$ nucleation was investigated using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) analyses. Argon ECR plasma pretreatment was found to offer the highest $RuO_2$ nucleation density among these three pretreatments. The mechanism through which $RuO_2$ nucleation is enhanced by ECR plasma pretreatment may be that the argon or the hydrogen ECR plasma removes nitrogen and oxygen atoms at the TiN film surface so that the underlying TiN film surface is changed to Ti-rich TiN.

SAMBA Type MPSoC Bus Architecture Optimization under Performance Constraints (성능 제약 조건 하에서의 SAMBA 형 MPSoC 버스 구조 최적화)

  • Kim, Hong-Yeom;Jung, Sung-Chul;Shin, Hyun-Chul
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.1
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    • pp.94-101
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    • 2010
  • Optimization of interconnects among processors and memories becomes important as multiple processors and memories can be integrated on a Multi-Processor System-on-Chip (MPSoC). Since the optimal interconnection architecture is usually dependent on the applications, systematic design methodology for various data transfer requirements is necessary. In this paper, we focus on bus interconnection for MPSoC applications which use 4 ~ 16 processors. We propose a new systematic bus design methodology under performance constraints using Single Arbitration Multiple Bus Accesses (SAMBA) style bus architectures. Optimized bus architecture is found to satisfy performance constraints for a single or multiple applications. When compared to the unoptimized architecture, our method can reduce the bus switch logic circuits significantly (by more than 50% sometimes). Furthermore, low cost bus architectures can be found to satisfy the performance constraints for multiple applications.

Efficient Scheduling Schemes for Low-Area Mixed-radix MDC FFT Processor (저면적 Mixed-radix MDC FFT 프로세서를 위한 효율적인 스케줄링 기법)

  • Jang, Jeong Keun;Sunwoo, Myung Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.54 no.7
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    • pp.29-35
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    • 2017
  • This paper presents a high-throughput area-efficient mixed-radix fast Fourier transform (FFT) processor using the efficient scheduling schemes. The proposed FFT processor can support 64, 128, 256, and 512-point FFTs for orthogonal frequency division multiplexing (OFDM) systems, and can achieve a high throughput using mixed-radix algorithm and eight-parallel multipath delay commutator (MDC) architecture. This paper proposes new scheduling schemes to reduce the size of read-only memories (ROMs) and complex constant multipliers without increasing delay elements and computation cycles; thus, reducing the hardware complexity further. The proposed mixed-radix MDC FFT processor is designed and implemented using the Samsung 65nm complementary metal-oxide semiconductor (CMOS) technology. The experimental result shows that the area of the proposed FFT processor is 0.36 mm2. Furthermore, the proposed processor can achieve high throughput rates of up to 2.64 GSample/s at 330 MHz.

Quantitative Analysis of Power Consumption for Low Power Embedded System by Types of Memory in Program Execution (저전력 임베디드 시스템을 위한 프로그램이 수행되는 메모리에 따른 소비전력의 정략적인 분석)

  • Choi, Hayeon;Koo, Youngkyoung;Park, Sangsoo
    • Journal of Korea Multimedia Society
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    • v.19 no.7
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    • pp.1179-1187
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    • 2016
  • Through the rapid development of latest hardware technology, high performance as well as miniaturized size is the essentials of embedded system to meet various requirements from the society. It raises possibilities of genuine realization of IoT environment whose size and battery must be considered. However, the limitation of battery persistency and capacity restricts the long battery life time for guaranteeing real-time system. To maximize battery life time, low power technology which lowers the power consumption should be highly required. Previous researches mostly highlighted improving one single type of memory to increase ones efficiency. In this paper, reversely, considering multiple memories to optimize whole memory system is the following step for the efficient low power embedded system. Regarding to that fact, this paper suggests the study of volatile memory, whose capacity is relatively smaller but much low-powered, and non-volatile memory, which do not consume any standby power to keep data, to maximize the efficiency of the system. By executing function in specific memories, non-volatile and volatile memory, the quantitative analysis of power consumption is progressed. In spite of the opportunity cost of all of theses extra works to locate function in volatile memory, higher efficiencies of both power and energy are clearly identified compared to operating single non-volatile memory.

The Placeness of Deokjin Park in Jeonju City (전주시 덕진공원의 장소성)

  • Kim Yun-Geum;Sung Jong-Sang
    • Journal of the Korean Institute of Landscape Architecture
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    • v.33 no.3 s.110
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    • pp.65-77
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    • 2005
  • Deokjin Park in Jeonju City was the site of a pond during the Koryo Period. Although Jeonju City has developed rapidly in modem times, Deokjin Pond was preserved and was developed into a park It can be theorized that Deokjin Pond's latent character has made it possible for it to adapt to the changes it has undergone throgh the years. In this study, the placeness of Deokjin Park is determined by examining its role in the adaptation process. Placeness can be determined by examining the objective character of a certain environment and the subjective experience related to it. For this paper, documents about the history of Deokjin Park were examined so that the facts related to it could be established. In addition, a number of Jeonju citizens were asked about their memories of Deokjin Park since memories reveal people's subjective experiences. The results of this study can be summarized as follows. Deokjin Pond is an ideal space for Feng Shui. It is a holy place because the tomb of the founder of the Chosun Dynasty is close to it. In addition, it has scenic value as it is part of the Jeonju Palkyoung (eight sceneries). To this day, we can see people washing their hair in the pond, proof that Deokjin Pond is still the subject of folk beliefs. When Korea was under Japanese rule, Deokjin Pond became Deokjin Park because of its ideal location, scenic value, and grand possibilities as an amusement center. Over the years, though its scenic value decreased after the death of its pine trees. Jeonju City, however, was able to revive the park's charm though a series of renovation projects and through the addition of several facilities. Deokjin Park is now surrounded by many cultural buildings. The significance of Deokjin Park can be expected to evolve with these changes. This study helps to predict the future of Deokjin Park and to elucidate the importance of landscape architecture from the point of view of an "evolving place."

DESIGN AND IMPLEMENTATION OF THE SMALL SATELLITE ON-BOARD COMPUTER SYSTEM : KASCOM (소형위성의 제어를 위한 컴퓨터 시스템의 설계 및 구현)

  • 김기형;김형신;박재현;박규호;최순달
    • Journal of Astronomy and Space Sciences
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    • v.13 no.2
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    • pp.52-66
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    • 1996
  • In this paper, we present the design methodology of KASCOM(KAIST satellite computer), the experimental on-board computer system of KITSAT-2. The design of the on-board computer system should consider the following constraints: operational throughput, fault tolerant input-output, low power, size, weight, and radiation hardness. KASCOM is designed to satisfy these constraints. This paper also presents the implementation and testing details of KASCOM. Finally, the in-orbit operational results are presented. The results show that about 2 SEU errors occur for the program memory(1Mbit SRAM) in a day, while 3.7 SEU errors occur for the data memory(4Mbit SRAM). This implies that high-integrated memories are more susceptible to the radiation environment than low-integrated memories.

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Inductively Coupled Plasma Reactive Ion Etching of MgO Thin Films Using a $CH_4$/Ar Plasma

  • Lee, Hwa-Won;Kim, Eun-Ho;Lee, Tae-Young;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.77-77
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    • 2011
  • These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

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Effects of Etch Parameters on Etching of CoFeB Thin Films in $CH_4/O_2/Ar$ Mix

  • Lee, Tea-Young;Lee, Il-Hoon;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.390-390
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    • 2012
  • Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

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