• Title/Summary/Keyword: material-independent

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Generalized Method for Constructing Cutting Force Coefficients Database in End-milling (엔드밀링 가공에서 절삭력 계수 데이터베이스 구현을 위한 일반화된 방법론)

  • 안성호;고정훈;조동우
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.8
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    • pp.39-46
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    • 2003
  • Productivity and machining performance can be improved by cutting analysis including cutting force prediction, surface error prediction and machining stability evaluation. In order to perform cutting analysis, cutting force coefficients database have to be constructed. Since cutting force coefficients are dependent on cutting condition in the existing research, a large number of calibration tests are needed to obtain cutting force coefficients, which makes it difficult to build the cutting force coefficients database. This paper proposes a generalized method for constructing the cutting force coefficients database us ins cutting-condition-independent coefficients. The tool geometry and workpiece material were considered as important components for database construction. Cutting force coefficients were calculated and analyzed for various helix and rake angles as well as for several workpiece. Furthermore, the variation of cutting force coefficients according to tool wear was analyzed. Tool wear was found to affect tool geometry, which results in the change of cutting force coefficients.

A Study on Photoresist Stripping Using High Density Oxygen Plasma (고밀도 산소 플라즈마를 이용한 감광제 제거공정에 관한 연구)

  • Jung, Hyoung-Sup;Lee, Jong-Geun;Park, Se-Geun;Yang, Jae-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.2
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    • pp.95-100
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    • 1998
  • A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.

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Simultaneous Measurement of Temperature and Refractive Index of a Medium Using by a Side-Polished Fiber Containing a Fiber Bragg Grating (광섬유 브래그 격자가 포함된 측면 연마된 광섬유를 이용한 매질의 온도와 굴절률 동시 측정)

  • Kim, Kwang Taek
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.8
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    • pp.513-517
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    • 2015
  • We proposed and demonstrated a simultaneous measurement method to detect the refractive index and temperature of a medium using a side-polished fiber involving FBG (fiber Bragg grating). The temperature of a medium was obtained by using the Bragg wavelength shift of FBG, while the refractive index of medium were calculated by using the transmission loss. The Bragg wavelength is independent on the refractive index of the covering medium placed on surface of side-polished fiber, while the transmission loss at off-Bragg wavelength highly depends on the environmental temperature because of thermo-optic effect of the medium.

Built-in Voltage in Organic Light-emitting Diodes depending on the Alg3 Layer Thickness (Alg3 두께 변화에 따른 유기 발광 소자의 내장 전압)

  • Lee, Eun-Hye;Yoon, Hee-Myoung;Kim, Tae-Wan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.3
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    • pp.255-259
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    • 2008
  • Built-in voltage in ITO/$Alq_3$/ Al organic light-emitting diodes was studied by varying a thickness of $Alq_3$ layer using modulated photocurrent technique at ambient condition. A thickness of the $Alq_3$ layer was varied from 100 to 250 nm. From the bias voltage-dependent photocurrent, built-in voltage of the device was able to be determined. The obtained built-in voltage is about 0.8 V irrespective of the $Alq_3$ layer thickness in the device. This value of built-in voltage confirms that the built-in voltage is generated due to a difference of work function of the anode and cathode. The $Alq_3$ layer thickness independent built-in voltage indicates that the built-in electric field in the device is uniform across the organic layer.

Simulation Method of Threshold Voltage Shift in Thin-film Transistors (박막트랜지스터의 문턱전압 이동 시뮬레이션 방안)

  • Jung, Taeho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.5
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    • pp.341-346
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    • 2013
  • Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TFT) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT's behavior models implemented in SPICE tools, it can be easily added to them.

A state space meshless method for the 3D analysis of FGM axisymmetric circular plates

  • Wu, Chih-Ping;Liu, Yan-Cheng
    • Steel and Composite Structures
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    • v.22 no.1
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    • pp.161-182
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    • 2016
  • A state space differential reproducing kernel (DRK) method is developed for the three-dimensional (3D) analysis of functionally graded material (FGM) axisymmetric circular plates with simply-supported and clamped edges. The strong formulation of this 3D elasticity axisymmetric problem is derived on the basis of the Reissner mixed variational theorem (RMVT), which consists of the Euler-Lagrange equations of this problem and its associated boundary conditions. The primary field variables are naturally independent of the circumferential coordinate, then interpolated in the radial coordinate using the early proposed DRK interpolation functions, and finally the state space equations of this problem are obtained, which represent a system of ordinary differential equations in the thickness coordinate. The state space DRK solutions can then be obtained by means of the transfer matrix method. The accuracy and convergence of this method are examined by comparing their solutions with the accurate ones available in the literature.

Stochastic bending characteristics of finite element modeled Nano-composite plates

  • Chavan, Shivaji G.;Lal, Achchhe
    • Steel and Composite Structures
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    • v.26 no.1
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    • pp.1-15
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    • 2018
  • This study reported, the effect of random variation in system properties on bending response of single wall carbon nanotube reinforced composite (SWCNTRC) plates subjected to transverse uniform loading is examined. System parameters such as the SWCNT armchair, material properties, plate thickness and volume fraction of SWCNT are modelled as basic random variables. The basic formulation is based on higher order shear deformation theory to model the system behaviour of the SWCNTRC composite plate. A C0 finite element method in conjunction with the first order perturbation technique procedure developed earlier by the authors for the plate subjected to lateral loading is employed to obtain the mean and variance of the transverse deflection of the plate. The performance of the stochastic SWCNTRC composite model is demonstrated through a comparison of mean transverse central deflection with those results available in the literature and standard deviation of the deflection with an independent First Order perturbation Technique (FOPT), Second Order perturbation Technique (SOPT) and Monte Carlo simulation.

The Optical Properties of Tetramethyldisiloxane Plasma Polymerization Thin Films (Tetramethyldisiloxane 플라즈마 중합막의 광학특성)

  • Choi, Chung-Seog;Park, Bok-Kee;Kim, Doo-Seog;Lee, Jin;Lee, Duck-Chool
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.05a
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    • pp.146-149
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    • 1996
  • Polymerization rate, transmittance, refractive index, and extinction coefficient of plasma polymerized tetramethydisiloxane (TMD) have been investigated. The rate of polymerization of TMD films increased nonlinearly with the discharge lower. The refractive indices of thin films varied from 1.40 to 1.43 and they also increased with increasing discharge power. Also, the extinction coefficient was about 0.2 and is independent of photon energy.

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A study on the structural properties of BaTiO$_3$thin films with sputtering condition (sputtering 조건에 따른 BaTiO$_3$박막의 구조적 특성에 관한 연구)

  • 이문기;류기원;배선기;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.183-186
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    • 1996
  • BaTiO$_3$thin films were deposited on Pt/SiO$_2$/Si substrates by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Deposition rates and structural properties of BaTiO$_3$thin films were investigated by the SEM, XRD and AFM. The thickness of BaTiO$_3$thin films deposited with optimized conditions was 5200[$\AA$]. The grain size was found to increase remarkably with increasing sputtering power and independent on the sputtering pressure.

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Stochastic upscaling via linear Bayesian updating

  • Sarfaraz, Sadiq M.;Rosic, Bojana V.;Matthies, Hermann G.;Ibrahimbegovic, Adnan
    • Coupled systems mechanics
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    • v.7 no.2
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    • pp.211-232
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    • 2018
  • In this work we present an upscaling technique for multi-scale computations based on a stochastic model calibration technique. We consider a coarse-scale continuum material model described in the framework of generalized standard materials. The model parameters are considered uncertain, and are determined in a Bayesian framework for the given fine scale data in a form of stored energy and dissipation potential. The proposed stochastic upscaling approach is independent w.r.t. the choice of models on coarse and fine scales. Simple numerical examples are shown to demonstrate the ability of the proposed approach to calibrate coarse scale elastic and inelastic material parameters.