• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.1
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• pp.42-48
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• 2011

In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.3
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• pp.376-379
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• 2014

In this paper, we designed more improving a dual-band power amplifier than the transceiver of RFID reader that operates at 910 MHz and 2.45 GHz. A dual-band power amplifier has two circuits. One matching circuit is composed lumped element in the band of 910 MHz. The other matching circuit using distributed element in the high band of 2.45 GHz. So, this dual-band power amplifier works as Band Rejection Filter in the band of 910 MHz but in the high band of 2.45 GHz works as Band Pass Filter. Therefore, this is composed a microstrip transmission line. A power amplifier is showed gains of 8 dB output power at 910 MHz and 1.5 dB output power at 2.45 GHz. If input power is 10 dBm, both of bands output 20 dBm.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.1
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• pp.46-56
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• 1991

In this paper, 16word X 8bit Content Addressable and Reentrant Memory(CARM) is described. This device has 4 operation modes(read, write, match, reentrant). The read and write operation of CARM is like that of static RAM, CARM has the reentrant mode operation where the on chip garbage collection is accomplished conditionally. Thus function can be used for high speed matching unit of dynamic data flow computer. And CARM also can encode matching address sequentially according to therir priority. CARM consists of 8 blocks(CAM cell, Sequential Address Encoder(S.A.E). Reentrant operation. Read/Write control circuit, Data/Mask Register, Sense Amplifier, Encoder. Decoder). Designed DARM can be used in data flow computer, pattern, inspection, table look-up, image processing. The simulation is performed using the QUICKSIM logic simulator and Pspice circuit simulator. Having hierarchical structure, the layout was done using the 3{\;}\mu\textrm{m} n well CMOS technology of the ETRI design rule.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.6A
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• pp.920-930
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• 1999

Many researches on the multi-level QAM(Quadrature Amplitude Modulation) which is known to be a promising digital data transmission method for efficient use of channel bandwidth have been carried on, and their applications to various real fields are now being in progress. However, in the band-limited communication systems, each transmitted symbols is distorted by the ISI(Intersymbol Interference) and the phase error. Therefore, an equalizer and a carrier recovery must be taken into considerations to attenuate the effects of these distortions in the receiver. This paper presents an effective receiver structures that is applicable to the multi-level QAM. The proposed receiver system is consisted of an equalizer with Godard’s blind algorithm and a carrier recovery circuit. The phase error is estimated with a $\theta$-matching algorithm and is used in the carrier recovery to recover the correct phase. The simulation results are included to evaluate performance of the proposed receiver system for the various channel models.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.9
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• pp.47-53
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• 2011

The signal transmission properties of the connector such as insertion loss and return loss are investigated using analysis procedure of S-parameter simulation, equivalent model extraction, and characteristic impedance calculation. S-parameter simulation is performed by connector's modeling and solving based on 3-dimensional finite element method. The connector's equivalent model of ${\pi}$ type is are proposed and extracted with an optimization process of circuit analysis simulator. The characteristic impedance of the connector is calculated with results of circuit analysis simulation and S-parameter data. According to the connector's characteristic impedance, it's revised design is carried out. In this work, the connector's effective contact area is increased and its body is applied as a high dielectric material in order to increase its capacitance and then obtain impedance matching. Therefore, return loss of the connector is improved by approximately 10 dB due to its design revision.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.895-903
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• 2007

Design equations of DC blocks terminated in arbitrary impedances are newly suggested and a microstrip DC block is tested for the perfect matching. The DC block is a two-port passive component and the power excited at a port is transmitted into another port. However, all the excited power at the input can not be delivered to the output and therefore most of the conventional DC blocks can not be perfectly matched with arbitrary termination impedances. To solve the matching problem, its one-port equivalent resonant circuit model, front which design equations can be derived, is newly suggested. Using the derived design equations, any DC block can be designed, perfectly matched without any restriction of coupling coefficients. To verify the derived design equations, measurements were carried out and the results are in good agreement with prediction, showing insertion and return losses at 4.1 GHz are 0.82dB and -31dB, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.595-598
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• 2006

In this letter, a compact rectangular spiral antenna is proposed. Instead of a center excitation of conventional spiral antennas, the proposed antenna is adopted a modified feed network, feeding at the end of the spiral. The matching circuit of $'{\sqsupset}'$ shape is added at the feeding point. With this matching circuit, we can easily match the input impedance well, without the limit of the space. The parameter which determines the circular wave characteristic is explained, and the design guideline of the proposed antenna is presented. We design a proposed antenna operating at 9.5 GHz. Its size is only $0.6\lambda_g\times0.6\lambda_g$. The simulated bandwidth of the input impedance $(S11\leq-10)$ is 8.12% and that of $(AR\leq-3)$ is 4.62%, which is excellent characteristics as compared to its simple structure.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.5
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• pp.61-66
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• 2013

In this paper, temperature dependence of matching characteristics of $Si_3N_4$ MIM capacitor was analyzed in depth. The matching characteristics becomes worse as the temperature increases. That is, the matching coefficient of $Si_3N_4$ MIM capacitor at $25^{\circ}C$, $75^{\circ}C$, and $125^{\circ}C$ was 0.5870, 0.6151, and $0.7861%{\mu}m$, respectively. This phenomena is believed to be due to the reduction of the carrier mobility and the increase of the charge concentration of the inner capacitor at greater temperature. Therefore, the analysis of the matching characteristics of $Si_3N_4$ MIM capacitors at high temperatures is essential for application to analog and SoC (System on Chip) circuit.

• Journal of Advanced Navigation Technology
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• v.24 no.2
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• pp.107-114
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• 2020

A power amplifier of 2.4 GHz ISM band is designed to implement a transmitter system. High efficiency amplifiers can be implemented as class E or class F amplifiers. This study has designed a 20 W high efficiency class E amplifier that has simple circuit structure in order to utilize for the ISM band application. The impedance matching circuit was designed by class E design theory and circuit simulation. The designed amplifier has the output power of 44.2 dBm and the power added efficiency of 69% at 2.45 GHz. In order to apply 30 dBm input power to the designed power amplifier, voltage controlled oscillator (VCO) and driving amplifier have been fabricated for the input feeding circuit. The measurement of the power amplifier shows 43.2 dBm output and 65% power added efficiency. This study can be applied to the design of power amplifiers for various wireless communication systems such as wireless power transfer, radio jamming device and high power transmitter.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.41-45
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• 2014

In this paper, a high-efficiency power amplifier is implemented by using a drain bias control circuit operated at low input power for WPT(Wireless Power Transfer). Adaptive bias control circuit was added to high-efficiency class-E amplifier. It was possible to obtain the overall improvement in efficiency by adjusting the drain bias at low input power. The proposed adaptive class-E amplifier is implemented by using the input and output matching network and serial resonant circuit for improvement in efficiency. Drain bias control circuit consists of a directional coupler, power detector, and operational amplifier for adjusting the drain bias according to the input power. The measured results show that output powers of 41.83 dBm were obtained at 13.56 MHz. At this frequency, we have obtained the power added efficiency(PAE) of 85.67 %. It was confirmed increase of PAE of an average of 8 % than the fixed bias from the low input power level of 0 dBm ~ 6 dBm.