• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.205-213
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• 2008

A 3D particle code is developed to analyze electron behavior in a planar magnetron sputtering cathode either in balanced or unbalanced configuration. Three types of collisions are included; electron - neutral elastic, excitation to a metastable state and ionization. Flight path is calculated by a 4-th order Runge-Kutta method with a time step of 10 ps. Effects of electron starting position, magnetic field intensity and configuration were analyzed. For a more efficient and accurate modeling, multithreading technique is considered for multicore CPU computers. Under an assumption of cold ion approach, target erosion profiles are predicted for a flat target surface.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.135-136
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• 2002

Molybdenum Nitrided (MoNx) films were deposited by DC planar magnetron sputtering. Silicon wafers and real nitrided stainless steel piston rings are employed as substrates. 12 different combinations of nitrogen and argon partial pressure, from 1:7 to 7:1, were applied to deposit MoNx films. X-ray diffraction (XRD) was used to determine the phase structures of films. When nitrogen vs. argon partial pressure is 1:7, the film is mainly $Mo_2N$ phase. With increase of nitrogen partial pressure, MoN phase emerges, but $Mo_2N$ phase still exists. Composition analysis with atomic emission spectrometry (AES) also agreed with this. The films have very high nanohardness (max 2400Hv) and good adhesion to the substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.192-192
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• 2009

AZO films were prepared by $Ar:H_2$ gas RF magnetron sputtering system with a AZO (2wt% $Al_2O_3$) ceramic target at a low temperature of $100^{\circ}C$. To investigate the influence of $H_2$ flow ratio on the properties of AZO films, $H_2$ flow ratio was changed from 0.5% to 2%. As a result, the AZO films deposited with 1% $H_2$ addition showed electrical properties with a resistivity of $5.06{\times}10^{-3}{\Omega}cm$. The spectrophotometer-measurements showed the transmittance of 86.5% was obtained by the film deposited with $H_2$ flow ratio of 1% in the range of 940nm for GaAs/GaAlAs LED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.123-123
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• 2009

In our experiment, a PTFE was sputter-coated on substrates to induce water-repellent properties and the RF-magnetron sputtering method for fabrication of PTFE film is used due to the advantages of the simple process, time saving, environmentally friendly, insulating property, and a good adhesion property to substrates. As a result of the correlation between surface roughness of PTFE films and contact angle with water, we found that the roughness surfaces are proportioned to contact angles related to low interfacial energy.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.196-203
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• 1996

The highly c-axis oriented zinc oxide thin films were deposited on Sapphire(0001) substrates by reactive RF magnetron sputtering. The characteristics of zinc oxide thin films on RF power, substrate-target distance, and substrate temperature were investigated by XRD, SEM and EDX analyses. The physical characteristics of zinc oxide thin films changed with various deposition conditions. The higher substrate temperatures were, The better crystallinity of zinc oxide thin films. The highly c-axis oriented zinc oxide thin films were obtained at sputter pressure 5mTorr, rf power 200W, substrate temperature 350.deg. C, substrate-target distance 5.5cm. In these conditions, the resistivity of zinc oxide thin films deposited on pt/sapphire was 12.196*10$^{9}$ [.ohm.cm].

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.886-892
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• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.307-311
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• 2017

ZnO:Al thin films were deposited on glass substrate by RF magnetron sputtering followed by in situ heat treatment in the same chamber. Effects of in situ heat treatment on properties of ZnO:Al thin films were investigated in this study. As heat treatment temperature was increased, crystal quality was improved first and then it was deteriorated, surface roughness was decreased, and sheet resistance was also decreased. The decrease in sheet resistance was caused by increasing carrier concentration due to decreased surface roughness. The decrease in surface roughness resulted in increase of transmittance. Therefore, in situ heat treatment is an effective method for obtaining films with better electrical characteristics.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.326-331
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• 2005

We obtain analytical expressions the magnetic field of ferrites for DC magnetron sputtering device, which has been widely used for vacuum thin film deposition, and suggested the equation on maximum radius of the magnetic field by analytic solution. Also, the analytic results are compared with some calculations using magnetization elements of right-angled hexahedron.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.574-577
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• 2001

GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.227-233
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• 1994

The Bi-Sr-Ca-Cu-O thin films were deposited by RF-magnetron sputtering method on Si(P-111) wafer without a buffer layer and annealed at various temperatures in oxygen atmosphere. The temperature dependence of electrical resistance, the microstructure of intermediate phase, and the surface morphology of films were examined by four probe method, XRD, and SEM, respectively. The chemical composition and the depth profile of the films were determined by ESCA spectra. Thin films annealed at $600^{\circ}C$ and $700^{\circ}C$ in oxygen atmosphere showed onset temperatures of 90 K and 85K, and Tc(zero) of 22K and 31K, respectively. The sample annealed at $700^{\circ}C$ had the highest volume fraction of superconducting phase and showed smooth microsturcture. In ESCA spectra, the thin films were homogeneous with depth.