• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.631-635
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• 1995

Longitudinal magnetic recording process of thin film media was simulated by the 2-D finite element method (FEM). To describe precisely the hysteresis behavior of thin film media, scalar Preisach model was used. In this paper, we discussed the formation of bit patterns and importance of modeling of minor loops in high density recording. The effects of the media coercivity and film thickness on the remanent magnetization and transition shape were investigated.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.80.2-80.2
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• 2008

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.780-785
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• 2004

The degradation mechanism of soft magnetic properties of $Fe-Hf-N/Cr/SiO_2$ thin films reacted with a bonding glass was investigated. When $Fe-Hf-N/Cr/SiO_2$ films were annealed under $600^{\circ}C$ without the bonding glass, the compositions and the soft magnetic properties of Fe-Hf-N layers were not changed. However, after reaction with the bonding glass at $550^{\circ}C$, the soft magnetic properties of the film were degraded. At $600^{\circ}C$, the saturation magnetization of the reacted film decreased to 13.5 kG, and its coercivity increased to 4 Oe, and its effective permeability decreased to 700. It was founded that O diffused from the glass into the Fe-Hf-N layers during the reaction and generated $HfO_2$ phases. It was considered that the soft magnetic properties of the $Fe-Hf-N/Cr/SiO_2$ films reacted with the bonding glass were primarily degraded by the formation of the Fe-Hf-O-N layer of which the Fe content was below 60 $at\%$, and secondarily degraded by the Fe-Hf-O-N layer above 70 $at\%$.

• 전자공학회논문지 IE
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• v.45 no.3
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• pp.1-4
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• 2008

We investigate magnetic semiconductor thin films for application towards spintronics, which can overcome current limitations in semiconductor devices. GaMnAs magnetic semiconducting films studied are easily integrated into conventional semiconductor processes and also offer a wide range of application, therefore it shows much promise as a future material. However the Curie temperature at which magnetic properties exist for GnMnAs is very low, also depending on deposition conditions the properties of the film can vary widely. In order to study these issues we investigate the best possible deposition conditions for magnetic properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.318.2-318.2
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• 2016

FeM2X4 spinel structures, where M is a transition metal and X is oxygen or sulfur, are candidate materials for spin filters, one of the key devices in spintronics. Both the Fe and M ions can occupy tetrahedral and octahedral sites; therefore, these types of compounds can display various physical and chemical properties [1]. On the other hand, the electronic and magnetic properties of these spinel structures could be modified via the control of cation distribution [2, 3]. Among the spinel oxides, iron manganese oxide is one of promising materials for applications. FeMn2O4 shows inverse spinel structure above 390 K and ferrimagnetic properties below the temperature [4]. In this work, we report on the structural and magnetic properties of epitaxial FeMn2O4 thin film on MgO(100) substrate. The reflection high energy electron diffraction (RHEED) and X-ray diffraction (XRD) results indicated that films were epitaxially grown on MgO(100) without the impurity phases. The valance states of Fe and Mn in the FeMn2O4 film were carried out using x-ray photoelectron spectrometer (XPS). The magnetic properties were measured by vibrating sample magnetometer (VSM), indicating that the samples are ferromagnetic at room temperature. The structural detail and origin of magnetic ordering in FeMn2O4 will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Magnestics Society Conference
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• 1991.05a
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• pp.77-78
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• 1991

• Proceedings of the Korean Magnestics Society Conference
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• 1993.11a
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• pp.18-19
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• 1993

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.76-77
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 1996.10a
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• pp.22-23
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• 1996