• Electrical & Electronic Materials
• /
• v.8 no.1
• /
• pp.6-12
• /
• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.3
• /
• pp.30-34
• /
• 2016

We investigated magnetic field, discharged voltage, and as-deposited film uniformity at facing targets sputtering (FTS) system with magnetic field type: i) concentrated and ii) distributed magnetic field type. And Al doped ZnO (AZO) films were prepared at two magnetic field type such as concentrated magnetic field type and distributed magnetic field type, respectively. Discharge voltage at the distribution type is lower than concentration type due to low magnetic flux (middle magnetic flux: Concentration 1200 G and Distribution 600 G). The films deposited at the distributed magnetic field were more uniform than concentration type. All of prepared AZO films had a resistivity of under $10^{-4}[{\Omega}{\cdot}cm]$ and a transmittance of more than 85 % in the visible range.

• Journal of Magnetics
• /
• v.5 no.4
• /
• pp.120-123
• /
• 2000

Co-Ni-Fe-N thin films were fabricated by a $N_2$ reactive rf magnetron sputtering method. The nitrogen partial pressure ($P_{N2}$) was varied in the range 0~10% . As$P_{N2}$ increases in this range, the saturation magnetization $B_s$ linearly decreases from 19.8 kG to 14 kG and the electrical resistivity ($\rho$) increases from 27 to 155 $\mu\Omegacm$. The coercivity $H_c$ exhibits the minimum value at 4% $P_{N2}$. The magnetic anisotropy fields ($H_k$) are in the range of 20$\sim$50 Oe. High frequency characteristics of $(Co_{22.2}Ni_{27.6}Fe_{50.2})_{100-x}N_x$ films are excellent in the range of 3$\sim$5% of $P_{N2}$. In particular, the effective permeability of the film fabricated at 4% $P_{N2}$ is 800, which is maintained up to 600 MHz. This film also shows Bs of 17.5 kG, $H_c$/ of 1.4 Oe, resistivity of 98$\mu\Omegacm$ and $H_k$ of about 25 Oe. Also, the corrosion resistance of $(Co_{22.2}Ni_{27.6}Fe_{50.2})_{100-x}N_x$ films was imp roved with increasing N concentration.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2000.09a
• /
• pp.492-499
• /
• 2000

Co-Ni-Fe-N thin films were fabricated by a N$\sub$2/ reactive rf magnetron sputtering method. The nitrogen partial pressure (P$\sub$N2/) was varied in the range of 0∼10%. As P$\sub$N2/ increases in this range, the saturation magnetization (B$\sub$s/) linearly decreases from 19.8 kG to 14 kG and the electrical resistivity ($\rho$) increased from 27 to 155 ${\mu}$$\Omega$cm. The coercivity (H$\sub$c/) exhibits the minimum value at 4% of P$\sub$N2/. The magnetic anisotropy (H$\sub$k/) are in the range of 20∼50 Oe. High frequency characteristics of (Co$\sub$22.2/Ni$\sub$27.6/Fe$\sub$50.2/)$\sub$100-x/N$\sub$x/ films are excellent in the range of 3∼5% of P$\sub$N2/. Especially the effective permeability of the film fabricated at 4% of P$\sub$N2/ is 800, which is maintained up to 600 MHz. This film also shows Bs of 17.5 kG, H$\sub$c/ of 1.4 Oe, resistivity of 98 $\Omega$cm and H$\sub$k/ of about 25 Oe. Also, the corrosion resistance of (Co$\sub$22.2/Ni$\sub$27.6/Fe$\sub$50.2/)$\sub$100-x/N$\sub$x/ were improved with the increase in N concentration.

• Journal of the Korean Magnetics Society
• /
• v.16 no.6
• /
• pp.283-286
• /
• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.12a
• /
• pp.105-105
• /
• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.172-176
• /
• 2002

This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structured solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20um width and 3um thickness is electroplated on Cr(300${\AA}$)/Au(1500${\AA}$) films for the pick-up(42turn) and the excitation(24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3 $\mu\textrm{m}$ is obtained under 2000Gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ∼1,100 and coercive field of -0.1Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150V/T at the excitation frequency of 2MHz and the excitation voltage of 4.4Vp-p. The power consumption is estimated to be 50mW.

• Journal of Magnetics
• /
• v.13 no.3
• /
• pp.92-96
• /
• 2008

There are few reports of high frequency loss behavior in the near-field for magnetic films with semiconducting properties, even though semiconducting magnetic materials, such as soft magnetic amorphous alloys and nanocrystalline thin films, have been demonstrated. The electromagnetic loss behavior of multilayer magnetic films with semiconducting properties on the microstrip line in quasi-microwave frequency band was analyzed numerically using a commercial finite-element based electromagnetic solver. The large increase in the absorption performance and broadband characteristics of the semiconducting/insulating layer magnetic films examined in this study were attributed to an increase in the loss factor of resistive loss. The electromagnetic reflection increased significantly with increasing conductivity, and the loss power deteriorated significantly. The numerical results of the magnetic field distribution showed that a strong radiated signal on the microstrip line was emitted with increasing conductivity and decreasing film thickness due to re-reflection of the radiated wave from the surface of the magnetic film, even though the emitted levels varied with film thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.2
• /
• pp.120-124
• /
• 2003

This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structure solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20${\mu}$m width and 3${\mu}$m thickness is electroplated on Cr (300${\AA}$) / Au (1500${\AA}$) films for the pick-up (42turn) and the excitation (24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3${\mu}$m is obtained under 2000 gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ~1,100 and coercive field of ~0.1 Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150 V/T at the excitation frequency of 2 MHz and the excitation voltage of 4.4 V$\_$p p/. The power consumption is estimated to be 50mW.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.05a
• /
• pp.35-38
• /
• 1995

Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.