• Proceedings of the Korea Concrete Institute Conference
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• 2006.11a
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• pp.413-416
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• 2006

This paper presents the analytical results on the heat of hydration and induced thermal cracking of the wall elements in LiNAC that is a radioactive shield concrete structure. This wall elements measuring 1.2 m in thickness and 32 m in length tend to exhibit thermal cracking due to heat of hydration and high constraint effects caused by slab element located in the lower part of structure. In this analysis, four different construction stages were considered to find out the most effective concrete casting method in terms of thermal stress. Among the construction methods adopted in this analysis, the method of installation of construction connection measuring 1.2 m at the both side of wall elements was very effective way to control the thermal stress, resulting in increase thermal cracking index of wall elements in LiNAC structure. Finally, the wall elements in LiNAC structure was cast successfully according to the proposed construction method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.696-700
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• 2010

We fabricated red and blue organic light emitting display (OLEDs) which had the two kinds of multi-structure of ITO/HIL/HTL/EML/ETL/LiF/Al and ITO/HIL/HTL/EML/ETL/LiF/Al/LiF. In the case of red OLED that had LiF/Al/LiF structure compared to LiF/Al structure, the current density increased from 4.3 mA/$cm^2$ to 7.3 mA/$cm^2$, and the brightness increased from 488 cd/$m^2$ to 1,023 cd/$m^2$ at 7.0 V, and as a result the current efficiency was improved from 11.28 cd/A to 13.95 cd/A. Also in the case of blue OLED that had LiF on Al cathode layer, the current density increased from 1.2 mA/$cm^2$ to 1.8 mA/$cm^2$, and the brightness increased from 45 cd/$m^2$ to 85 cd/$m^2$ at 7.0 V, and as a result the current efficiency was improved from 3.69 cd/A to 4.82 cd/A. Through these experimental results it could be suggested that the LiF layer formed on Al prevents the oxidation of Al surface, and the electrode resistance become low with increase of supplied electrons, therefore the brightness and the efficiency are improved from the influence to the well-balanced bonding of electron and hole at emitting layer.

• Journal of Forest and Environmental Science
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• v.31 no.3
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• pp.164-176
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• 2015

Cyathea gigantea is a tree fern distributed throughout humid tropical regions of northeast India and other parts of the country. However, wild populations of this species are largely affected by various natural and anthropogenic activities. Therefore, an attempt was made to study the population structure and regeneration status of C. gigantea in and around greater Itanagar area of Papum Pare district, Arunachal Pradesh. Altogether 45 patches, ranging from 19.63 to $260m^2$ of area, were randomly sampled to study population structure and regeneration status of the species. Population study showed highest number of youngs in the height class of 0.50-0.75 m while, immatures were recorded highest in the height class of 2.0 to 2.5 m. Majority of the matures belonged to 6-9 m height class while it was recorded maximum in the diameter class of 10-15 cm. Average density of C. gigantea was $0.07individuals\;ha^{-1}$ which varied greatly among different patches with a range of 2 to 14. Significant correlations were found between patch size and density of youngs, immatures, matures and total density. Maximum concentration of youngs was observed in patch size $60-140m^2$, while for immatures, it was highest in patch size $20-160m^2$. Similarly, highest concentration of matures was observed in patch size $20-80m^2$ and $80-180m^2$. Population structure of the total population exhibited inverted pyramid shaped distribution. Population structure consisting of youngs, immatures, matures showed that around 60% patches lack of regenerating individuals which depict very poor natural regeneration of the species. Effective conservation strategies are therefore to be formulated to save C. gigantea from the threat of extinction in near future.

• Fibers and Polymers
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• v.3 no.1
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• pp.18-23
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• 2002

The structure development and dynamic properties of fibers produced by high-speed spinning of P(EN-ET) random copolymers were investigated. The as-spun fibers were found to remain amorphous up to the spinning speed of 1500 m/min, and subsequent increases in speed resulted in the crystalline domains containing primarily $\alpha$ crystalline modification of PEN. The f modification was not found up to spinning speeds of 4500 m/min. On the other hand, annealing of constrained fibers spun at the 2100 m/min at 180,200, and 240^{\circ}C$ exhibited $\beta$-form crystalline structure, while the annealed fibers spun in 600-1500 m/min range exhibited dominantly $\alpha$-form. However $\beta$-form crystals disappeared above the spinning speed of 3000 m/min. With increasing spinning speeds from 600 to 4500 m/min, the storage modulus of as-spun fibers increased continuously and reached a value of about 10.4 spa at room temperature. The tan $\delta$curves showed the $\alpha$-relaxation peak at about 155-165^{\circ}C$, which is considered to correspond to the glass transition. The $\alpha$-relaxation peaks became smaller and broader, and shift to higher temperatures as the spinning speed increases, meaning that molecular mobility in the amorphous region is restricted by increased crystalline domain.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.1-6
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• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

• Steel and Composite Structures
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• v.9 no.3
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• pp.239-253
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• 2009

This paper reviews the concept of tensegrity structures and proposes a new type of dismountable steel tensegrity grids for possible deployment as light-weight roof structures. It covers the fabrication of the prototype structures followed by their instrumentation, destructive testing and numerical analysis. First, a single module, measuring $1m{\times}1m$ in size, is fabricated based on half-cuboctahedron configuration using galvanised iron (GI) pipes as struts and high tensile stranded cables as tensile elements. Detailed instrumentation of the structure is carried out right at the fabrication stage. The structure is thereafter subjected to destructive test during which the strain and the displacement responses are carefully monitored. The structure is modelled and analyzed using finite element method (FEM) and the model generated is updated with the experimental results. The investigations are then extended to a $2{\times}2$ grid, measuring $2m{\times}2m$ in size, fabricated uniquely by the cohesive integration of four single tensegrity modules. After updating and validating on the $2{\times}2$ grid, the finite element model is extended to a $8{\times}8$ grid (consisting of 64 units and measuring $8m{\times}8m$) whose behaviour is studied in detail for various load combinations expected to act on the structure. The results demonstrate that the proposed tensegrity grid structures are not only dismountable but also exhibit satisfactory behaviour from strength and serviceability point of view.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• Journal of IKEEE
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• v.27 no.3
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• pp.308-312
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• 2023

The gate current sensing structure was proposed to more effectively control the regulation of the output voltage when the LDO regulator occurs in an overshoot or undershoot situation. In a typical existing LDO regulator, the regulation voltage changes when the load current changes. However, the operation speed of the pass transistor can be further improved by supplying/discharging the gate terminal current in the pass transistor using a gate current sensing structure. The input voltage of the LDO regulator using the gate current sensing structure is 3.3 V to 4.5 V, the output voltage is 3 V, and the load current has a maximum value of 250 mA. As a result of the simulation, a voltage change value of about 12 mV was confirmed when the load current changed up to 250 mA.

• East Asian mathematical journal
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• v.40 no.1
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• pp.1-23
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• 2024

Let M be a semi-invariant submanifold of codimension 3 with almost contact metric structure (𝜙, 𝜉, 𝜂, g) in a complex space form M_n+1(c). We denote by A, K and L the second fundamental forms with respect to the unit normal vector C, D and E respectively, where C is the distinguished normal vector, and by R_𝜉 = R(𝜉, ·)𝜉 the structure Jacobi operator. Suppose that the third fundamental form t satisfies dt(X, Y) = 2𝜃g(𝜙X, Y) for a scalar 𝜃(≠ 2c) and any vector fields X and Y , and at the same time R_𝜉K = KR_𝜉 and ∇_{𝜙∇𝜉𝜉}R_𝜉 = 0. In this paper, we prove that if it satisfies ∇_𝜉R_𝜉 = 0 on M, then M is a real hypersurface of type (A) in M_n(c) provided that the scalar curvature $\bar{r}$ of M holds $\bar{r}-2(n-1)c{\leq}0$.

• Communications of the Korean Mathematical Society
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• v.9 no.2
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• pp.401-409
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• 1994

One of typical submanifolds of a Sasakian manifold is the so-called generic submanifolds which are defined as follows: Let M be a submanifold of a Sasakian manifold M with almost contact metric structure (ø, G, ξ) such that M is tangent to the structure vector ξ. If each normal space is mapped into the tangent space under the action of ø, M is called a generic submanifold of M [2], [8].(omitted)