• Journal of the Korean Electrochemical Society
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• v.10 no.3
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• pp.213-218
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• 2007

In order to find out proper PVdF gel polymer electrolyte for Li/S battery, we investigated PVdF gel polymer electrolytes with various glyme type plasticizer such as polyglyme, tetraglyme, triglyme. The organic solvents as triglyme, tetraglyme, polyglyme (Mn = 250, 500) has different chain length of ethylene oxide(EO) in solvent of glyme system. ionic conductivity decreased as increasing chain length of EO in plasticizers. Ionic conductivity of PVdF gel electrolyte with tetraglyme, triglyme, polyglyme (Mn = 250, 500) at room temperature was $5{\times}10^{-4},\;3{\times}10^{-4},\;6{\times}10^{-5},\;3{\times}10^{-5}\;S/cm$, respectively. Li/S cell with PVdF gel polymer electrolyte using tetraglyme plasticizer had low interfacial resistance and the highest initial discharge capacity of 1232 mAh/g of active sulfur, which was about 70% utilization of theoretical value.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.163-170
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• 2002

This paper proposes a $10\;{\mu}m$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and micromachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation ($500^{\circ}C$, 1 hr at $H_2O/O_2$) and rapid thermal oxidation (RTO) process ($1050^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to $10\;{\mu}m$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 2dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about -20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

• Korean Chemical Engineering Research
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• v.45 no.4
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• pp.378-383
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• 2007

A novel fabrication method for the multi-component metal oxides such as zirconium titanate($Zr_xTi_{1-x}O_2$) has been suggested, which would yield the uniform film characteristics and control the film composition at relatively low process temperature. The method has the basic concept that firstly layer-by-layer structure is constructed with the primitive oxide layers, which are components of the desired multi-component oxides, and secondly the film is annealed at appropriate thermal conditions for the transformation to a single-phase multi-component oxides. In this study, PRTMOCVD(pulsed rapid thermal metalorganic chemical vapor deposition) possessing the superior thickness controllability was introduced to prepare $ZrO_2$ and $TiO_2$ thin film for zirconium titanate. Single-phase zirconium titanate thin films have been prepared successfully by the interdiffusion of oxide multilayers having several alternating layers of $ZrO_2$ and $TiO_2$. The Zr/Ti ratio of zirconium titanate could be controlled easily by altering the thickness of $ZrO_2$ and $TiO_2$ thin film.

• Korean Chemical Engineering Research
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• v.57 no.4
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• pp.525-530
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• 2019

The performance and stability of solid oxide fuel cells (SOFCs) depend on the microstructure of the electrode and electrolyte. In anode, porosity and pore distribution affect the active site and fuel gas transfer. In an electrolyte, density and thickness determine the ohmic resistance. To optimizing these conditions, using costly method cannot be a suitable research plan for aiming at commercialization. To solve these drawbacks, we made high performance unit cells with low cost and highly efficient ceramic processes. We selected the NiO-YSZ cermet that is a commercial anode material and used facile methods like die pressing and dip coating process. The porosity of anode was controlled by the amount of carbon black (CB) pore former from 10 wt% to 20 wt% and final sintering temperature from $1350^{\circ}C$ to $1450^{\circ}C$. To achieve a dense thin film electrolyte, the thickness and microstructure of electrolyte were controlled by changing the YSZ loading (vol%) of the slurry from 1 vol% to 5 vol. From results, we achieved the 40% porosity that is well known as an optimum value in Ni-YSZ anode, by adding 15wt% of CB and sintering at $1350^{\circ}C$. YSZ electrolyte thickness was controllable from $2{\mu}m$ to $28{\mu}m$ and dense microstructure is formed at 3vol% of YSZ loading via dip coating process. Finally, a unit cell composed of Ni-YSZ anode with 40% porosity, YSZ electrolyte with a $22{\mu}m$ thickness and LSM-YSZ cathode had a maximum power density of $1.426Wcm^{-2}$ at $800^{\circ}C$.

• Journal of Korean Society of Forest Science
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• v.111 no.4
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• pp.490-501
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• 2022

In this study, the isoprene and terpene emissions from 32 major urban tree species were investigated. We conducted sampling using a dynamic enclosure system between June and July 2021. Seedlings aged < three years were enclosed in a chamber consisting of a 400 L transparent Tedlar bag. The air flow from the outlet of the chamber was sampled using Tenax-filled sorbent tubes under standard conditions (temperature: 30°C; PAR: 1,000 μmol/m²/sec). A thermal desorption gas chromatography/mass spectrometry system was used to analyze the following 38 biogenic volatile organic compounds: isoprene, monoterpenes, sesquiterpenes, oxygenated monoterpenes, and oxygenated sesquiterpenes. Isoprene emitters included Quercus mongolica, Salix koreensis, Robinia pseudoacacia, and Salix chaenomeloides. Monoterpene emitters included Pinus strobus, Cedrela sinensis, and Cercis chinensis. The monoterpene emission profiles were dominated by á-pinene, myrcene, camphene, and limonene. The predominant oxygenated monoterpene and oxygenated sesquiterpene were eucalyptol and caryophyllene oxide, respectively. For all species, the contributions of sesquiterpenes and oxygenated sesquiterpenes were relatively low.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.23-25
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• 2001

In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.202-206
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• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.777-780
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• 2005

모바일 오디오 적용을 위한 저전력 ${\Sigma}{\Delta}$ Modulator 에 대한 설계와 layout 을 보였다. 전체 구조는 3 차 단일 피드백 루프이며, 해상도는 16bit 을 갖는다. 샘플링 주파수에 따른 Over-sampling Ratio 는 128(46kHz) 또는 64(96kHz) 가 되도록 하였다. 차동 구조를 사용한 3 차 ${\Sigma}{\Delta}$ modulator 내의 적분기에 사용된 Op-Amp 는 DC-Gain 을 높이기 위해서 Gain-boosting 기법이 적용되었다. ${\Sigma}{\Delta}$ modulator 의 기준 전압은 전류 모드 Band-Gap Reference 회로에서 공급이 되며, PVT(Process, Voltage, Temperature) 변화에 따른 기준 전압의 편차를 보정하기 위하여, binary 3bit 으로 선택하도록 하였다. DAC 에서 사용되는 단위 커패시터의 mismatch 에 의한 성능 감소를 막기 위해, DAC 신호의 경로를 임의적으로 바꿔주는 scrambler 회로를 이용하였다. 4bit Quantizer 내부의 비교기 회로는 고해상도를 갖도록 설계하였고, 16bit thermometer code 에서 4bit binary code 변환시 발생하는 에러를 줄이기 위해 thermometer-to-gray, gray-to-binary 인코딩 방법을 적용하였다. 0.18um CMOS standard logic 공정 내 thick oxide transistor(3.3V supply) 공정을 이용하였다. 입력 전압 범위는 2.2Vp-p,diff. 이며, Typical process, 3.3V supply, 50' C 시뮬레이션 조건에서 2Vpp,diff. 20kHz sine wave 를 입력으로 할 때 SNR 110dB, THD 는 -95dB 이상의 성능을 보였고, 전류 소모는 6.67mA 이다. 또한 전체 layout 크기는 가로 1100um, 세로 840um 이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.1-306.1
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• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.196.1-196.1
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• 2016

TCO(Transparent Conducting Oxide) on flat glass is used in thin-film photovoltaic cell, flat-panel display. Nowadays, Corning(R) Willow Glass(R), known as flexible substrate, has attracted much attention due to its many advantages such as reliable roll-to-roll glass processing, high-quality flexible electronic devices, high temperature process. Also, it can be an alternative to flexible polymer substrates which have their poor stability and degradation of electrical and optical qualities. For application on willow glass, the flexibility, electrical, optical properties can be greatly influenced by the TCO thin film thickness due to the inherent characterization of thin film in nanoscale. It can be expected that while thick TCO layer causes poor transparency, its sheet resistance become low. Also, rarely reports were focusing on the influence of flexible properties by varying TCO thickness on flexible glass. Therefore, it is very important to optimize TCO thickness on flexible Willow glass. In this study, Ti-ZnO thin films, with different thickness varied from 0 nm to 50 nm, were deposited on the flexible willow glass by atomic layer deposition (ALD). The flexible, electrical and optical properties were investigated, respectively. Also, these properties of Ti-doped ZnO thin films were compared with un-doped ZnO thin film. Based on the results, when Ti-ZnO thin films thickness increased, resistivity decreased and then saturated; transmittance decreased. The Figure of Merit (FoM) and flexibility was the highest when Ti-ZnO thickness was 40nm. The flexible, electrical and optical properties of Ti-ZnO thin films were better than ZnO thin film at the same thickness.