• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.486-492
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• 1998

The amorphous Co-based magnetic films have a large saturation flux density, a low coercive force, and a zero magnetostriction constant. Therefore, they have been studied for application to magnetic recoding heads and micro magnetic devices. However, it was found that the magnetic anisotropy was changed for each film fabrication processes. In this study, we investigated how to control the anisotropy of sputtered amorphous $Co_{89}Nb{8.5}Zr{2.5}$ films. After deposition, the rotational field annealing ant the uniaxial field annealing were performed under the magnetic field of 1.5 kOe. the annealing was done at the temperature range from 400 to $600^{\circ}C$ for one hour. As-deposited amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin film had saturation magnetization ($4\piM_5$) of 0.8 T, coercive force($_IH_C$) of 1.5 Oe, and anisotropy field($H_k$) of 11 Oe. The amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin films annealed by rotational field annealing at $500^{\circ}C$ for one hour was found to be isotropy, and $4\piM_5$ of 0.9 T was obtained from these films, Also, the magnetic anisotropy of as-deposited films could be controlled by uniaxial field annealing at $400^{\circ}C$ for one hour. Anisotropy field($H_k$) of 17 Oe and $4\piM_5$ of 1.0 T were obtained by this method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.30-31
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• 2006

We have fabricated SmBCO coated conductor on IBAD-MgO substrates using unique co-evaporation method. The batch type co-deposition system was specially designed and named as EDDC(evaporation using drum m dual chamber) that is possible to deposit superconducting layer with different composition ratio at low temperature of $700^{\circ}C$. In this study, we have investigated the influence of SmBCO phase composition and texture of IBAD-MgO template on the critical current density. We have changed the deposition rates of Sm, Ba and Cu during co-evaporation to examine the optimal composition ratio shown better critical current density. The composition ratio and surface morphology of SmBCO coated conductors were analyzed by the EDX and SEM, respectively. A higher critical current density was measured at superconducting phase composition ratio of Ba deficiency, Sm or Cu rich compared to the Sm1Ba2Cu3Ox stoichiometry.

• Polymer(Korea)
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• v.25 no.6
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• pp.774-781
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• 2001

In order to reuse the waste matters, the polyester hybrid composites were fabricated with the waste stone (WSP) and waste tire (WTC). Before mixing, the waste fillers were treated with the silane coupling agent [${\gamma}$-methacryloxy propyl trimethoxy silane(${\gamma}$-MPS)] for enhancing the dispersion of the fillers and interfacial bonding with polymer matrix. Mechanical properties and morphologies of the resulted hybrid composites were investigated with the filler content. The hybrid composites containing surface treated fillers have high initial thermal decomposition temperature and low weight loss compared to the untreated one. The highest mechanical properties of composites were obtained with the ${\gamma}$-MPS (2 wt%) treated fillers. The porosity of composite increased with the content of organic filler which can be reduced by the silane surface treatment of fillers. The pore size distribution of the composites varied with the waste filler content.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.309-314
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• 2003

A spark plasma sintering technique has been used for the fabrication of $Al_2O_3$-SiC nanocomposites at the low temperature of $1100^{\circ}C$∼$1500^{\circ}C$. The sintered $Al_2O_3$-SiC composites shows very homogeneous microstructure without any particular abnormal grain growth, indicating that the addition of nano-sized SiC particles is very effective to control grain growth and to induce the residual stress in the $Al_2O_3$ matrix, resulting in the intragranular fracture. These SiC particles are present in the grain boundaries and also intragrain, depending on the sintering condition, and improve remarkably the mechanical properties of $Al_2O_3$-SiC composite through the mechanisms of strengthening and toughening induced by crack diffraction and crack bridging.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.210-215
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• 2006

Mechanical alloying (MA) by high energy ball mill of pure copper and niobium powders was carried out under the Ar gas atmosphere. The supersaturated solid solution can be produced in the range up to $Cu_xNb_{100-x}$(x=5-30) by MA for 120 hrs, as demonstrated by X-ray diffraction, DSC analysis and the electronic studies through a change in the superconducting transition in the low-temperature specific heat. The $Cu_{30}Nb_{70}$ samples ball-milled for 120 hrs exhibit only a broad exothermic heat release. The total energy, ${\Delta}H_t$ accumulated during MA far the mixture of $Cu_{30}Nb_{70}$ powders increased with milling time and approached the saturation value of 7.5 kJ/mol after 120 h of milling. It can be seen that the free energy difference between the supersaturated solid solution and the mixture of $Cu_{30}Nb_{70}$ powders is estimated to be 7 kJ/mol by Miedema et al. Hence it is thermodynamically possible to assume the formation of a supersaturated solid solution phase in this system.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.48-56
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• 1989

Contact-type linear image sensors for facsimile have been fabricated by means of rf glow discharge decomposition method of silane. The dependence of their electrical and optical properties on rf power, $SiH_4$ flow rate, ambient gas pressure, $H_2SiH_4$ ratio and substrate temperature are described. The a-Si:H monolayer demonstriated photosensitivity of 0.85 and $I_{ph}/I_d$ ratio of 100 unger 100 lux illumination. However, this monolayer has relatively high dark current due to carrier injection from both electrodes, resulting in low $I_{ph}/I_{dd}$ ratio. To suppress the dark current we have fabricated $SiO_2/i-a-Si:H/p-a-Si:H:B$ multilayer film with blocking structure. The photocurrent of this multilayer sensor with 6 V bias became saturated ar about 20nA under 10 lux illumination, while the dark current was less than 0.2 nA. Moreover, the spectral sensitivity of the multilayer film was enhanced for short wavelength visible region, compared with that of the a-Si:H monolayer. These results show that the fabricated photocon-ductive film can be used as the linear image sensor of the facsimile.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.34-41
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• 1984

MOEN/MO double layer which is to be used It)r the RMOS (refractory metal oxide semiconductor) gate material has been fabricated by means of low temperature reactive sputtering in N2 and Ar mixture. Good Mo2N film was obtained in the volumetric mixture of Ar:N2=95:5. The sheet resistance of the fabricated Mo7N film was about 1.20 - 1.28 ohms/square, which is about an order of magnitude lower than that of polysilicon film, and this would enable to improve the operational speed of devices fabricated with this material. When PSG (phosphorus silicate glass) was used as impurity diffusion source for the source and drain of the RMOSFET in the N2 atmosphere at about 110$0^{\circ}C$, the Mo2N was reduced to Mo resulting in much smaller sheet resistance of about 0.38 ohm/square. The threshold voltage of the RMOSFET fabricated in our experiment was - 1.5 V, and both depletion and enhancement mode RMOSFETs could be obtained.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.11 s.102
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• pp.1114-1122
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• 2005

In this paper, the study of a design, fabrication and measurement of the receiver MMIC LNA, mixer for S-band application is described. The LNA is designed by 2-stage common source. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The LNA has 15.51 dB-gain and 1.02dB-Noise Figure at 2.1 GHz. The conversion gain of the mixer is -12 dB, IIP3 is approximately 4.25 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.2[mm]\times1.4[mm]$.