• 제목/요약/키워드: low-temperature bonding

검색결과 303건 처리시간 0.034초

전장에 의한 유리와 금속의 접합 (Glass to Metal Bonding by Electric Field)

  • 정우창;김종희
    • 한국세라믹학회지
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    • 제20권1호
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    • pp.70-78
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    • 1983
  • This paper discusses the application of Si-Borosilicate glass sealing to a new sealing method which utilizes a large electrostatic field to pormote bound formation at relatively low temperature. Bonding mechanism and the effect of bonding time bonding temperature glass thickness and surface roughness on the bond strength were investigated. Application of a de voltage across bonded specimen gradually produced a layer of glass adjacent silicon which was depleted of mobile ions. As a consequence a n increasingly larger fraction of the applied voltage appeared across the depleted region and very large electric field resulted This field accompanyed by large electrostatic force acted as driving force the of strong bond. And stronger bond was formed with increasing bonding time and temperature. A low temperature preoxidation is advantageous for the Si surface having a rougher surface finish that 1 microinch.

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전력반도체 패키징을 위한 Transient liquid phase 접합 기술 (Trasient Liquid Phase bonding for Power Semiconductor)

  • 노명훈;;정재필;김원중
    • 마이크로전자및패키징학회지
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    • 제24권1호
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    • pp.27-34
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    • 2017
  • Recently, a demand in sustainable green technologies is requiring the lead free bonding for high power module packaging due to the environmental pollution. The Transient-liquid phase (TLP) bonding can be a good alternative to a high Pb-bearing soldering. Basically, TLP bonding is known as the combination of soldering and diffusion bonding. Since the low melting temperature material is fully consumed after TLP bonding, the remelting temperature of joint layer becomes higher than the operating temperature of the power module. Also, TLP bonding is cost-effective process than metal nanopaste bonding such as Ag. In this paper, various TLP bonding techniques for power semiconductor were described.

Conductive Film를 적용한 태양전지 모듈에 관한 연구 (A Study of Solar Cell Module using Conductive Film Bonding)

  • 박정철;양연원
    • 전기학회논문지P
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    • 제65권4호
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    • pp.250-254
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    • 2016
  • In this paper, solar-cell modules were fabricated by low-temperature bonding method of construction using CF. CF adhesive strength of cells at 180 degree using 3bus bar structure was measured average 2.4N. As the bonding temperature got higher, Voc and Iscwas increased. And at $185^{\circ}C$, Rseries was measured 0.013[${\Omega}$] which is the highest point. At $185^{\circ}C$, 2N and 6sec in bonding time, $P_{max}$ was measured 3.954[W], fillfactor was measured 67.36[%] and efficiency was measured13.178[%] the highest point.

최소 공정온도하에서 Mg-Ni의 열확산 접합에 관한 연구 (A Study on the Diffusion Bonding of Mg-Ni under Low Eutectic Temperature)

  • 진영준
    • 한국안전학회지
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    • 제32권1호
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    • pp.9-14
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    • 2017
  • Diffusion bonding is a technique that has the ability to join materials with minimum change in joint micro-structure and deformation of the component. The quality of the joints produced was examined by metallurgical characterization and the joint micro-structure developed across the diffusion bonding was related to changes in mechanical properties as a function of the bonding time. An increase in bonding time also resulted in an increase in the micro-hardness of the joint interface from 55 VHN to 180 VHN, The increase in hardness was attributed to the formation of intermetallic compounds which increased in concentration as bonding time increased.

MEMS 패키징 및 접합 기술의 최근 기술 동향 (Recent Trends of MEMS Packaging and Bonding Technology)

  • 좌성훈;고병호;이행수
    • 마이크로전자및패키징학회지
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    • 제24권4호
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    • pp.9-17
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    • 2017
  • In these days, MEMS (micro-electro-mechanical system) devices become the crucial sensor components in mobile devices, automobiles and several electronic consumer products. For MEMS devices, the packaging determines the performance, reliability, long-term stability and the total cost of the MEMS devices. Therefore, the packaging technology becomes a key issue for successful commercialization of MEMS devices. As the IoT and wearable devices are emerged as a future technology, the importance of the MEMS sensor keeps increasing. However, MEMS devices should meet several requirements such as ultra-miniaturization, low-power, low-cost as well as high performances and reliability. To meet those requirements, several innovative technologies are under development such as integration of MEMS and IC chip, TSV(through-silicon-via) technology and CMOS compatible MEMS fabrication. It is clear that MEMS packaging will be key technology in future MEMS. In this paper, we reviewed the recent development trends of the MEMS packaging. In particular, we discussed and reviewed the recent technology trends of the MEMS bonding technology, such as low temperature bonding, eutectic bonding and thermo-compression bonding.

Cu-Al 판재의 냉간 및 온간 압접에서 낮은 접합강도를 갖는 공정 조건에 관한 연구 (Process Conditions for Low Bonding Strength in Pressure Welding of Cu-Al Plates at Cold and Warm Temperatures)

  • 심경섭;이용신
    • 소성∙가공
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    • 제13권7호
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    • pp.623-628
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    • 2004
  • This paper is concerned with pressure welding, which has been known as a main bonding mechanism during the cold and warm forming such as clad extrusion or bundle extrusion/drawing. Bonding characteristics between the Cu and Al plates by pressure welding are investigated focusing on the weak bonding. Experiments are performed at the cold and warm temperatures ranging from the room temperature to $200^{\circ}C$. The important factors examined in this work are the welding pressure, pressure holding time, surface roughness, and temperature. A bonding map, which can identify the bonding criterion with a weak bonding strength of IMPa , is proposed in terms of welding pressure and surface roughness fur the cold and warm temperature ranges.

플립칩용 에폭시 접착제의 저온 속경화 거동에 미치는 경화제의 영향 (Effects of Hardeners on the Low-Temperature Snap Cure Behaviors of Epoxy Adhesives for Flip Chip Bonding)

  • 최원정;유세훈;이효수;김목순;김준기
    • 한국재료학회지
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    • 제22권9호
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    • pp.454-458
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    • 2012
  • Various adhesive materials are used in flip chip packaging for electrical interconnection and structural reinforcement. In cases of COF(chip on film) packages, low temperature bonding adhesive is currently needed for the utilization of low thermal resistance substrate films, such as PEN(polyethylene naphthalate) and PET(polyethylene terephthalate). In this study, the effects of anhydride and dihydrazide hardeners on the low-temperature snap cure behavior of epoxy based non-conductive pastes(NCPs) were investigated to reduce flip chip bonding temperature. Dynamic DSC(differential scanning calorimetry) and isothermal DEA(dielectric analysis) results showed that the curing rate of MHHPA(hexahydro-4-methylphthalic anhydride) at $160^{\circ}C$ was faster than that of ADH(adipic dihydrazide) when considering the onset and peak curing temperatures. In a die shear test performed after flip chip bonding, however, ADH-containing formulations indicated faster trends in reaching saturated bond strength values due to the post curing effect. More enhanced HAST(highly accelerated stress test) reliability could be achieved in an assembly having a higher initial bond strength and, thus, MHHPA is considered to be a more effective hardener than ADH for low temperature snap cure NCPs.