• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.83-87
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• 2003

Zirconium oxide films have been synthesized by radio-frequency magnetron sputtering deposition on n-Si(001) substrate with metal zirconium target at variant $O_2$ partial pressures. The influences of $O_2$ partial pressures of the morphology, deposition rate, microstructure, and the dielectric constant of $ZrO_2$ have been discussed. The results show that deposition rate of $ZrO_2$ films decreases, the roughness, and the thickness of the native $SiO_2$ interlayer increases with the increase of $O_2$ partial pressure. $ZrO_2$ films synthesized at low $O_2$ partial pressure are amorphous and monoclinic polycrystalline in nanometer scale at low $O_2$ partial pressure. The relative dielectrics of $ZrO_2$ films are in the range of 12 to 25.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.86-91
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• 2016

Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (- 87.5 dB) and low insertion loss (- 0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.347-352
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• 2010

To research the reduction of the dielectric constant depending on the ionic and electronic effects, the dielectric constant of SiOC film was obtained by C-V measurement using the structure of metal/SiOC film/Si, and $n^2$ calculated by the refractive index. The dielectric constant of SiOC film consists with dipole, ions and electrons. However, the dipole moment is ignored in the effect of dielectric constant in SiOC film. THe SiOC film was deposited by the plasma energy, and the gas precursor was dissociated and recombined. Therefore, the dielectric constant of the deposited film consisted of the polarity with ions. THe dielectric constant decreased after annealing process, because of the evaporation of OH hydroxyl group with polarity. The ideal SiOC film as low-k materials was annealed film with lowering the polarity, which is suitable for physical-chemical and electrical properties as an inter layer dielectric materials.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.190-196
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• 2014

Flexible $TiO_2$ films were deposited as dielectric materials for high-energy-density capacitors on polyethylene terephthalate (PET) substrates using a roll-to-roll sputtering method. Both the growth behavior and electrical properties of the flexible $TiO_2$ films were dependent on the sputtering pressure and $O_2$/Ar gas ratio during the sputtering process. All $TiO_2$ films had an amorphous structure regardless of the sputtering conditions due to the low substrate temperature. Microstructural characteristics such as the surface morphology and roughness of the films degraded with an increase in the sputtering pressure and $O_2$ gas concentration. The $TiO_2$ films deposited at a low pressure showed better electrical properties than those of films deposited at a high pressure. The $TiO_2$ films prepared at 10 mTorr exhibited a dielectric constant of approximately 90 at 1 kHz and a leakage current density of $5{\sim}6{\times}10^{-7}A/cm^2$ at 3 MV/cm.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.35-41
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• 2016

The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

• Korean Journal of Materials Research
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• v.20 no.3
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• pp.161-166
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• 2010

The ac, dc conductivity and dielectric properties of $DyCoO_3$ were reported in the temperature range of 77 - 300K and in the frequency range of 20 Hz - 100 kHz. It was observed that at low temperature, ac conductivity is much higher than dc conductivity and the hopping carrier between localized states near the Fermi level was the dominant loss mechanism. A comparison of the measured ac conductivity $\sigma(\omega)$ was made with some of the models of hopping conductivity of the proposed earlier in the literature. It was observed that in $DyCoO_3$ the measured ac conductivity, over the entire frequency and temperature region, can be explained reasonably well by assuming two contributions $\sigma_1(\omega)$ and $\sigma_2(\omega)$ to the measured $\sigma(\omega)$. The first, $\sigma_1(\omega)$, which dominates at low temperature, may be due to impurity conduction in a small polaron; the second, $\sigma_2(\omega)$, which dominates at higher temperatures, depending on the frequency of measurements, may be due to the hopping of a small polaron and is reasonable for the dielectric relaxation peak.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.57-63
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• 2003

The effects of glass addition on the low-temperature sintering and microwave dielectric properties of $BaO-Nd_2O_3-TiO_2$ dielectric ceramics were studied. When 10∼13 wt% of lithium borosilicate glass was added, the sintering temperature decreased from 130$0^{\circ}C$to 850-$900^{\circ}C$relative density of more than 97% was obtained. When the sample was sintered at $850^{\circ}C$ with 10 wt% of glass, the dielectric properties of $\epsilon_r{\ge}54$, $Q{\times}f_0{\ge}2300$, and $\tau_f{\ge}+8ppm/^{\circ}C$ were obtained.

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.93-94
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• 1995

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.248-248
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.106.4-106
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• 1998