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http://dx.doi.org/10.5757/JKVS.2010.19.5.347

Study on Availability about the Dielectric Constant of SiOC Thin Film  

Oh, Teresa (School of Electronic and Information Engineering, Cheongju University)
Publication Information
Journal of the Korean Vacuum Society / v.19, no.5, 2010 , pp. 347-352 More about this Journal
Abstract
To research the reduction of the dielectric constant depending on the ionic and electronic effects, the dielectric constant of SiOC film was obtained by C-V measurement using the structure of metal/SiOC film/Si, and $n^2$ calculated by the refractive index. The dielectric constant of SiOC film consists with dipole, ions and electrons. However, the dipole moment is ignored in the effect of dielectric constant in SiOC film. THe SiOC film was deposited by the plasma energy, and the gas precursor was dissociated and recombined. Therefore, the dielectric constant of the deposited film consisted of the polarity with ions. THe dielectric constant decreased after annealing process, because of the evaporation of OH hydroxyl group with polarity. The ideal SiOC film as low-k materials was annealed film with lowering the polarity, which is suitable for physical-chemical and electrical properties as an inter layer dielectric materials.
Keywords
SiOC film; Refractive index; Dielectric constant; Capacitance; Electron effect;
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