• 한국정보전자통신기술학회논문지
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• 제12권2호
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• pp.150-154
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• 2019

In the design of semiconductor integrated circuits, ESD is one of the important issues related to product quality improvement and reliability. In particular, as the process progresses and the thickness of the gate oxide film decreases, ESD is recognized as an important problem of integrated circuit design. Many ESD protection circuits have been studied to solve such ESD problems. In addition, the proposed device can modify the existing SCR structure without adding external circuit to effectively protect the gate oxide of the internal circuit by low trigger voltage, and prevent the undesired latch-up phenomenon in the steady state with high holding voltage. In this paper, SCR-based novel ESD(Electro-Static Discharge) device with the high holding voltage has been proposed. The proposed device has the lower triggering voltage without an external trigger circuitry and the high holding voltage to prevent latch-up phenomenon during the normal condition. Using TCAD simulation results, not only the design factors that influence the holding voltage, but also comparison of conventional ESD protection device(ggNMOS, SCR), are explained. The proposed device was fabricated using 0.35um BCD process and was measured electrical characteristic and robustness. In the result, the proposed device has triggering voltage of 13.1V and holding voltage of 11.4V and HBM 5kV, MM 250V ESD robustness.

• 전기학회논문지
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• 제57권3호
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• pp.403-408
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• 2008

The gyroscope is the sensor for detecting the rotation in inertial reference frame and constitute the navigation system together an accelerometer. As the inertial reference equipment for attitude determination and control in the satellite, the mechanical gyroscope has been used but it bring the disturbance for mass unbalance so the disturbance give a bad influence to the observation satellite mission because the mechanical gyroscope has the rotation parts. During the launch. The mechanical gyroscope is weak in vibration, shock and has the defect of narrow operating temperature range so it need the special design in integration. Recently the low orbit observation satellite for seeking the high pointing accuracy of image camera payload accept the FOG(Fiber Optic Gyro) or RLG(Ring Laser Gyro) for the attitude determination and control. The Ring Laser Gyro makes use of the Sanac effect within a resonant ring cavity of a He-Ne laser and has more accuracy than the other gyros. It need the 1000V DC to create the He-Ne plasma in discharge tube. In this paper, the design process of the High Voltage Power Supply for RLG(Ring Laser Gyroscope) is described. The specification for High Voltage Power Supply (HVPS) is proposed. Also, The analysis of flyback converter topology is explained. The Design for the HVPS is composed of the inverter circuit, feedback control circuit, high frequency switching transformer design and voltage doubler circuit.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.1097-1100
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• 1998

In this paper, the PLL(Phase-Locked Loops) for low voltage and high speed operation is described. In other to obtaining above objects, new CMOS circuit technologies have been used in the each block circuit of PLL. It operates with a lock range from 110 up to 700 MHz and has a peak to peak jitter of 50 ps at operating frequency of 250 MHz. It was fabricated in a $0.6\mu\textrm{m}$ CMOS technology and dissipated 45 mW from a single 3.3V.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.301-304
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• 2001

The analog multiplier is very useful building block in many circuits such as filter, frequency-shifter, and modulators. In recent year, The main design issue of circuit designer is low-voltage/low-power system design, because of all systems are recommended very integrated system and portable system In this paper, the proposed the four-quadrant analog multiplier is using the bulk-driven techniques. The bulk-driven technique is very useful technique in low-voltage system, compare with gate-driven technique. therefore the proposed analog multiplier is operated in 1V supply voltage. And the proposed analog multiplier is low power dissipation compare with the others. therefor the proposed analog multiplier is convenient in low-voltage/low-power in system.

• 한국정보전자통신기술학회논문지
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• 제15권2호
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• pp.144-151
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• 2022

본 논문에서는 배터리 응용을 위해 저면적 DC-DC 변환기를 갖는 1.5V 256kb eFlash 메모리 IP를 설계하였다. 저면적 DC-DC 변환기 설계를 위해서 본 논문에서는 단위 전하펌프 회로에서 펌핑 노드의 전압을 VIN 전압으로 프리차징해주는 회로인 크로스-커플드 (cross-coupled) 5V NMOS 트랜지스터 대신 5V NMOS 프리차징 트랜지스터를 사용하였고, 펌핑 노드의 부스팅된 전압을 VOUT 노드로 전달해주는 트랜지스터로 5V 크로스-커플드 PMOS 트랜지스터를 사용하였다. 한편 5V NMOS 프리차징 트랜지스터의 게이트 노드는 부스트-클록 발생기 회로를 이용하여 VIN 전압과 VIN+VDD 전압으로 스윙하도록 하였다. 그리고 펌핑 커패시터의 한쪽 노드인 클록 신호를 작은 링 발진 (ring oscillation) 주기 동안 full VDD로 스윙하기 위해 각 단위 전하펌프 회로마다 로컬 인버터 (local inverter)를 추가하였다. 그리고 지우기 모드 (erase mode)와 프로그램 모드 (program mode)에서 빠져나와 대기 (stand-by) 상태가 될 때 부스팅된 전압을 VDD 전압으로 프리차징해주는 회로를 사용하는 대신 HV (High-Voltage) NMOS 트랜지스터를 사용하여 VDD 전압으로 프리차징 하였다. 이와같이 제안된 회로를 DC-DC 변환기 회로에 적용하므로 256kb eFLASH IP의 레이아웃 면적은 기존 DC-DC 변환기 회로를 사용한 경우보다 6.5% 정도 줄였다.

• 한국정보통신학회논문지
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• 제12권1호
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• pp.137-142
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• 2008

본 논문에서는 $Low-V_T$ 트랜지스터가 필요 없는 로직공정으로 Parasitic NPN BJT를 이용하여 저 전압에서 동작 가능한 밴드갭 기준전압 발생기 회로를 제안하였다. $0.18{\mu}m$ triple-well 공정을 사용한 BGR회로를 측정 한 결과 VREF의 평균전압은 0.72V $3{\sigma}$는 45.69mV로 양호하게 측정되었다.

• 전기학회논문지
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• 제57권6호
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• pp.972-981
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• 2008

A New ZVS(Zero Voltage Switching) and ZVZCS(Zero Voltage and Zero Current Switching) Three-Level Converter is proposed. The proposed converter presented in this paper used a phase shift control with a flying capacitor in the primary side to achieve ZVS for the all switch. A primary auxiliary circuit, which consists of one coupled inductor, is added in the primary to provide ZVZCS conditions to primary switches. Many advantages including simple circuit topology high efficiency, and low cost make this converter attractive for high power applications. The principle of operation, feature and design considerations are illustrated and verified through the experiment with a 2kW(27V, 74A) 40 kHz IGBT based experimental circuit.

• 전력전자학회논문지
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• 제18권5호
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• pp.458-465
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• 2013

This paper proposes a novel soft-switched auxiliary resonant circuit to provide a Zero-Voltage-Transition at turn-on for a conventional PWM boost converter in a PFC application. The proposed auxiliary circuit enables a main switch of the boost converter to turn on under a zero voltage switching condition and simultaneously achieves both soft-switched turn-on and turn-off. Moreover, for the purpose of an intelligent multi-chip power module fabrication, the proposed circuit is designed to satisfy several design constraints including space saving, low cost, and easy fabrication. As a result, the circuit is easily realized by a low rated MOSFET and a small inductor. Detail operation and the circuit waveform are theoretically explained and then simulation and experimental results are provided based on a 1.8 kW prototype PFC converter in order to verify the effectiveness of the proposed circuit.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.79-84
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• 1998

A novel zero voltage and zero current switching (ZVZCS) full bridge (FB) PWM converter with low output current ripple is presented. A simple auxiliary circuit added in the secondary provides ZVZCS conditions to primary switches, ZVS for leading-leg switches and ZCS for lagging-leg switches, as well as reduces the output current ripple (ideally zero ripple). The auxiliary circuit includes neither lossy components nor additional active switches which are demerits of the previously presented ZVZCS converters. Many advantages including simple circuit topology, high efficiency, low cost and low current ripple make the new converter attractive for high performance high power (＞1kW) applications. The principle of operation, features and design considerations are illustrated and verified on a 2.5kW, 100KHz IGBT based experimental circuit.

• 전기전자학회논문지
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• 제21권1호
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• pp.66-69
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• 2017

In recent year, energy harvesting technologies from the ambient environments such as light, motion, wireless waves, and temperature again a lot of attraction form research community [1-5] due to its efficient solution in order to substitute for conventional power delivery methods, especially in wearable together with on-body applications. The drawbacks of battery-powered characteristic used in commodity applications lead to self-powered, long-lifetime circuit design. Thermoelectric generator, a solid-state sensor, is useful compared to the harvesting devices in order to enable self-sustained low-power applications. TEG based on the Seebeck effect is utilized to transfer thermal energy which is available with a temperature gradient into useful electrical energy. Depending on the temperature difference between two sides, amount of output power will be proportionally delivered. In this work, we illustrated a low-input voltage energy harvesting circuit applied discontinuous conduction mode (DCM) method for getting an adequate amount of energy from thermoelectric generator (TEG) for a specific wearable application. With a small temperature gradient harvested from human skin, the input voltage from the transducer is as low as 60mV, the proposed circuit, fabricated in a $0.6{\mu}m$ CMOS process, is capable of generating a regulated output voltage of 4.2V with an output power reaching to $40{\mu}W$. The proposed circuit is useful for powering energy to battery-less systems, such as wearable application devices.