• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.805-808
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• 2005

In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD(Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low power consumption at same time. maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps, Also, the LIGCSCR(Latch-up Immune Gate Coupled SCR)was designed. It consists of PLVTSCR (P-type Low Voltage Trigger SCR), control NMOS and RC network. The triggering voltage was simulated to 3.6V. And the latch-up characteristics were improved. Finally, we performed the layout high speed I/O interlace circuit with the low triggered ESD protection device in one-chip.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.57-62
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• 1997

Green-emitting $ZnGa_2O_4$ : Mn phosphors were synthesized by a thermal method and their low-voltage cathodoluminescent characteristics were examined for the field emitter display (FED) application. Low efficiency of $ZnGa_2O_4$ : Mn phosphors could be ascribed to the low penetration depth of into phosphors, which might results in charge accumulation on the phosphors screen. For increasing cathodoluminescent of $ZnGa_2O_4$ : Mn under low voltage excitation, wide band-gap oxide materials were added to the $ZnGa_2O_4$: Mn powder. It is found that the luminance can be increased by 20%. Measurement of leakage current on the phosphor screen shows that the enhancement of low-voltage cathodoluminescent by additive materials is mainly due to the consumption of surface charges on the phosphor.

• ETRI Journal
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• v.31 no.6
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• pp.725-731
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• 2009

In this paper, electrostatic discharge (ESD) protection circuits with an advanced substrate-triggered NMOS and a gate-substrate-triggered NMOS are proposed to provide low trigger voltage, low leakage current, and fast turn-on speed. The proposed ESD protection devices are designed using 0.13 ${\mu}m$ CMOS technology. The experimental results show that the proposed substrate-triggered NMOS using a bipolar transistor has a low trigger voltage of 5.98 V and a fast turn-on time of 37 ns. The proposed gate-substrate-triggered NMOS has a lower trigger voltage of 5.35 V and low leakage current of 80 pA.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.38-41
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• 2002

We have investigated current-voltage-luminance characteristics of organic light-emitting diodes based on TPD/Alq$_3$organics depending on the application of forward-backward bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the current-voltage characteristics were measured. We have observed that the current-voltage characteristics shows a reversible current maxima at low voltage, which is possibly not related to the emission from Alq$_3$. Current-voltage-luminance characteristics imply that the conduction luminance mechanism at low voltage is different from that of high voltage one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.63-66
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• 2017

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

• ETRI Journal
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• v.34 no.5
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• pp.727-733
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• 2012

This paper demonstrates a new driving scheme that allows reducing the supply voltage of data drivers for low-power active matrix organic light-emitting diode (AMOLED) displays. The proposed technique drives down the data voltage range by 50%, which subsequently diminishes in the peak power consumption of data drivers at the full white pattern by 75%. Because the gate voltage of a driving thin film transistor covers the same range as a conventional driving scheme by means of a level-shifting scheme, the low-data supply scheme achieves the equivalent dynamic range of OLED currents. The average power consumption of data drivers is reduced by 60% over 24 test images, and power consumption is kept below 25%.

• Journal of Electrical Engineering and Technology
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• v.8 no.1
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• pp.156-162
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• 2013

This paper measures the hot spot temperatures in a single-phase, 154 kV, 15/20 MVA power transformer filled with natural ester fluid using optical fiber sensors and compares them with those calculated by conventional heat run tests. A total of 14 optical fiber sensors were installed on the high-voltage and low-voltage windings to measure the hot spot temperatures. In addition, three thermocouples were installed in the transformer to measure the temperature distribution during the heat run tests. In the low-voltage winding, the hot spot temperature was $108.4^{\circ}C$, calculated by the conventional heat run test. However, the hot spot temperature measured using the optical fiber sensor was $129.4^{\circ}C$ between turns 2 and 3 on the upper side of the low-voltage winding. Therefore, the hot spot temperature of the low-voltage winding measured using the optical fiber sensor was $21.0^{\circ}C$ higher than that calculated by the conventional heat run test.

• Proceedings of the IEEK Conference
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• summer
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• pp.221-224
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• 2004

This paper proposed an ultra low-power CMOS exponential voltage-mode circuit using the Pseudo-exponential function for realizing the exponential characteristics. The proposed circuit provides high dB-linear output voltage range at low-voltage applications. In a $0.25\;\mu m$ CMOS process, the simulations show more than 35 dB output voltage range and 26 dB with the linearity error less than $\pm0.5\;dB.$ The average current consumption is less than 80 uA. The proposed circuit can be used for the design of an extremely low-power variable gain amplifier (VGA) and automatic gain control (AGC).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.5
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• pp.81-88
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• 2013

A low voltage circuit breaker protects electrical equipments from over current and short faults of system by cutting the power supply. The breaker use a thermal magnetic type trip device from the past. In recent years, electronic type relays are applied due to useful functions and services. The purpose of this development is full digitalizing of relay functions of a low voltage breaker. It includes separation of current sensor from current transformer, digital signal processing, high speed relaying, and voltage measuring for power meter. The suggestions are tested and implemented by making prototype and testing its all relay functions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.100-101
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• 2008

We have developed low voltage driving white organic light emitting diode with new electron transport layer. The with light emission was realized with a yellow dopant, rubrene and blue-emitting DPVBi layer. The new electron transport layer results in very high current density at low voltage, causing a reduction of driving voltage. The device with new electron transport layer shows a brightness of 1000 cd/m2 at 4.3 V.