• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.733-740
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• 2014

A resistive micro Pirani gauge using amorphous silicon (a-Si) thin membrane is proposed. The proposed Pirani gauge can be easily integrated with the other process-compatible membrane-type sensors, and can be applicable for in-situ vacuum monitoring inside the vacuum package without an additional process. The vacuum level is measured by the resistance changes of the membrane using the low noise correlated double sampling (CDS) capacitive trans-impedance amplifier (CTIA). The measured vacuum range of the Pirani gauge is 0.1 to 10 Torr. The sensitivity and non-linearity are measured to be 78 mV / Torr and 0.5% in the pressure range of 0.1 to 10 Torr. The output noise level is measured to be $268{\mu}V_{rms}$ in 0.5 Hz to 50 Hz, which is 41.2% smaller than conventional CTIA.

• 한국진공학회지
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• 제5권3호
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• pp.181-187
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• 1996

The Ultrasonic Interferometer Manometer(UIM) which can calibrae from1 Pa to $10^5$Pa has been developed, and its uncertainty is evaluated less than $\pm$(30ppm of pressure+12mPa). We can calibrate Capacitance Diaphragm Gauge(DCG) used as a transfer standard gauge in the low vacuum field. TheUIM enables to maintain the measurement traceability for industries. In order to improve the UIM's accracy, we will perform the international intercomparison withother national standards laboratories.

• 한국진공학회지
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• 제16권4호
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• pp.244-249
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• 2007

분동식압력계는 정밀한 압력 측정의 기준 장비로 널리 사용되고 있다. 그것은 분동압력계가 견고하고 정확하며 이동이 간편하고 압력의 정의를 물리적으로 구현할 수 있기 때문이다. 기본적으로 분동식압력계는 분동과 피스톤/실린더 장치로 구성되며 실린더 안에 직경이 꼭 맞는 피스톤이 수직으로 삽입된 구조를 갖고 있다. 측정하려는 압력은 피스톤 아래에 작용하여 윗방향 힘을 발생시키고 피스톤 위에 얹혀 있는 분동에 의해 발생하는 아랫방향 힘과 평형을 이루게 된다. 이때 피스톤 자체의 하중은 항상 작용하므로 분동식압력계는 보통 10 kPa이상의 압력 범위에서 주로 사용된다. 기존의 방식은 피스톤 아래의 높은 압력을 기준으로 사용하지만 본 방식은 피스톤 주위의 낮은 압력을 기준압력으로 사용하여 보다 더 낮은 압력의 측정이 가능하다. 본 논문에서는 이를 효율적으로 구현한 새로운 장치를 소개하고 실제로 1.33 kPa, 13.3 kPa 두 측정범위를 갖는 정밀한 저진공 게이지(MKS, CDG)를 교정, 평가한 결과에 대해서 기술하였다.

• 전기의세계
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• 제29권8호
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• pp.519-523
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• 1980

The traditional mechanical manometer is improved to develop more convenient and precise manometer in continuous measurement of the gas pressure in medium-low vacuum range (1x10$^{-1}$ -10 Torr.) Glass (solid) is used as a detector material of the improved manometer. Using the strain gauge adhered to thin glass board, mechanical strain corresponding to variation of pressure in measurement system is converted into quantity of electricity, and the quantity of electricity is amplified. Experiments have also shown that the improved manometer have more advantages in reproducibility, measured sensibility, and responsible velocity than taditional one.

• 한국진공학회지
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• 제12권3호
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• pp.151-156
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• 2003

저진공 국가표준기인 초음파간섭 수은주압력계를 이용하여 두 개의 용량형 격막식 게이지와 두 개의 공진형 실리콘 게이지를 교정하였다. 용량형 격막식 게이지의 센서부는 금속으로 되어 있으므로 견고하고 과압에 잘 견딜 뿐만 아니라 우수한 분해능을 가지고 있으며, 공진형 실리콘 게이지는 우수한 안정성과 기계적인 충격에 강한 특성을 가지고 있다. 이들의 교정 불확도를 국제표준화기구에서 제정한 측정불확도 표현지침서에 따라 분석하여 비교하였으며, 그 결과 확장불확도의 최대 차이는 교정압력 100 Pa에서 $9\times10^{-3}$Pa 이었다. 또한 공진형 실리콘 게이지의 표준압력에 대한 압력비의 차이가 0.5 % 이내이었으므로 저진공 영역의 전달표준기로 사용이 가능함을 알 수 있었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.777-780
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• 2005

The high vacuum in a electron beam lithography is basic condition, because electron beam vanish by collision with air molecules in generally atmosphere. To make high vacuum state, the vacuum control valve is essential. Most vacuum control valve are manual units. So, user of manual vacuum valve must have understanding vacuum process to change from low vacuum to high vacuum state. The user of electron beam lithography are troubled with operation of manual vacuum valve, in case the vacuum chamber is frequently open. In this paper, the design and performance test of auto vacuum control valve for electron beam lithography are described. With the auto vacuum control valve, the high vacuum level can reach 2.8E-5 Torr.

• 한국진공학회지
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• 제10권2호
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• pp.173-181
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• 2001

1,333 Pa 용량의 용량형진공계를 저진공 국가표준기인 초음파간섭 수은주압력계(ultrasonic interferometer manometer)를 이용하여 교정하였다. 이 결과의 불확도를 국제표준화기구의 권고안의 A형 불확도, B형 불확도, 합성표준불확도, 확장불확도 등으로 구분하여 평가하였다. 표준압력 1.76 Pa~1.31$\times$$10^3$Pa에서의 합성표준불확도는 $1.38 \times10^{-2}\; Pa\sim3.03 \times10^{-1} $Pa이었으며, 상대불확도(합성표준불확도/표준압력)는 $2.3 \times 10^{-4}\;Pa\sim7.9 X\times10^{-3} $Pa 이었다.

• 한국진공학회지
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• 제9권1호
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• pp.7-15
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• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• 센서학회지
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• 제13권4호
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• pp.303-308
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• 2004

This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-$(4{\sim}16%)N_{2}$) for high-temperature applications. These films were annealed in $2{\times}10^{-6}$ Torr vacuum furnace at the range of $500{\sim}1000^{\circ}C$. Optimum deposition atmosphere and annealing temperature were determined at $900^{\circ}C$ for 1 hr. in 8% $N_{2}$ gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of $768.93{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance (TCR) of -84 ppm/$^{\circ}C$ and a good longitudinal gauge factor (GF) of 4.12.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.376-377
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• 2006

This paper presents the characteristics of Ta-N thin film strain gauges that are suitable for harsh environemts, which were deposited on thermally oxidized Si substrates by DC reactive magnetronsputtering in an argon-nitrogen atmosphere (Ar-$N_2$ (4 ~ 16 %)). These films were annealed for 1 hr in $2{\times}10^{-6}$ Torr in a vacuum furnace with temperatures that ranged from 500 - $1000^{\circ}C$. The optimized deposition and annealing conditions of the Ta-N thin film strain gauges were determined using 8 % $N_2$ gas flow ratio and annealing at $900^{\circ}C$ for 1 hr. Under optimum formation conditions, the Ta-N thin film strain gauges obtained a high electrical resistivity, ${\rho}\;=\;768.93\;{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance, $TCR\;=\;-84\;ppm/^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12. The fabricated Ta-N thin film strain gauges are expected to be used inmicromachined pressure sensors and load cells that are operable under harsh environments.