• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.733-740
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• 2014

A resistive micro Pirani gauge using amorphous silicon (a-Si) thin membrane is proposed. The proposed Pirani gauge can be easily integrated with the other process-compatible membrane-type sensors, and can be applicable for in-situ vacuum monitoring inside the vacuum package without an additional process. The vacuum level is measured by the resistance changes of the membrane using the low noise correlated double sampling (CDS) capacitive trans-impedance amplifier (CTIA). The measured vacuum range of the Pirani gauge is 0.1 to 10 Torr. The sensitivity and non-linearity are measured to be 78 mV / Torr and 0.5% in the pressure range of 0.1 to 10 Torr. The output noise level is measured to be $268{\mu}V_{rms}$ in 0.5 Hz to 50 Hz, which is 41.2% smaller than conventional CTIA.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.181-187
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• 1996

The Ultrasonic Interferometer Manometer(UIM) which can calibrae from1 Pa to $10^5$Pa has been developed, and its uncertainty is evaluated less than $\pm$(30ppm of pressure+12mPa). We can calibrate Capacitance Diaphragm Gauge(DCG) used as a transfer standard gauge in the low vacuum field. TheUIM enables to maintain the measurement traceability for industries. In order to improve the UIM's accracy, we will perform the international intercomparison withother national standards laboratories.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.244-249
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• 2007

Deadweight piston gauge have been widely used as a fundamental instrument of precise pressure measurement because they are robust, accurate, potable, convenient to use and are able to realize the definition of pressure as farce per unit area. Basically, a deadweight piston gauge consists of a piston mounted vertically in a close-fitting cylinder filled with a gas and weights of known mass values. The pressure to be measured is applied to the base of the piston generating an upward vertical force, and is balanced by the downward gravitational force generated by weights. These instruments can be used to measure pressures above 10 kPa because of tare weights including piston. However, using a variable bell-jar pressure method and a newly developed weight loading device we can extend the application range of deadweight piston gauge to lower pressures. In this paper, we present the practical calibration results for two CDGs(Capacitance diaphragm gauge, MKS) with full-scale ranges of 1.33 kPa and 13.3 kPa, respectively.

• 전기의세계
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• v.29 no.8
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• pp.519-523
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• 1980

The traditional mechanical manometer is improved to develop more convenient and precise manometer in continuous measurement of the gas pressure in medium-low vacuum range (1x10$^{-1}$ -10 Torr.) Glass (solid) is used as a detector material of the improved manometer. Using the strain gauge adhered to thin glass board, mechanical strain corresponding to variation of pressure in measurement system is converted into quantity of electricity, and the quantity of electricity is amplified. Experiments have also shown that the improved manometer have more advantages in reproducibility, measured sensibility, and responsible velocity than taditional one.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.151-156
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• 2003

Two capacitance diaphragm gauges(CDG) and two resonance silicon gauges(RSG) were calibrated using an ultrasonic interferometer as a national low vacuum standard in KRISS. The CDG has superior pressure resolution and is rugged as well as resistant to over-pressure because of all-metal inner components. Meanwhile, the RSG is a new type of MEMS sensor that has excellent calibration stability and is resistant to mechanical shocks. The calibration uncertainties were analyzed according to the ISO procedures. Results showed that the maximum difference of the expanded uncertainties was $9\times10^{-3}$Pa at the generated pressure of 100 Pa for the two different types. It is remarkable that the RSG can be used as a transfer standard at low vacuum since their accuracies were found to be within 0.5 %.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.777-780
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• 2005

The high vacuum in a electron beam lithography is basic condition, because electron beam vanish by collision with air molecules in generally atmosphere. To make high vacuum state, the vacuum control valve is essential. Most vacuum control valve are manual units. So, user of manual vacuum valve must have understanding vacuum process to change from low vacuum to high vacuum state. The user of electron beam lithography are troubled with operation of manual vacuum valve, in case the vacuum chamber is frequently open. In this paper, the design and performance test of auto vacuum control valve for electron beam lithography are described. With the auto vacuum control valve, the high vacuum level can reach 2.8E-5 Torr.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.173-181
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• 2001

We calibrated a capacitance diaphragm gauge(CDG) of 1,333 Pa range by using ultrasonic interferometer manometer (UIM) that was a national low vacuum standards system. And its uncertainties were evaluated according to International Organization for Standardization(ISO), they were named to A type uncertainty, B type uncertainty, combined standard uncertainty, and expanded uncertainty, We obtained that the combined standard uncertainties were $1.38 \times10^{-2}\; Pa\sim3.03 \times10^{-1} $Pa and the relative uncertainties(combined standard uncertainty/standard pressure) were $2.3 \times 10^{-4}\;Pa\sim7.9 X\times10^{-3} $Pa for this 1,333 Pa CDG.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.7-15
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• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.303-308
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• 2004

This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-$(4{\sim}16%)N_{2}$) for high-temperature applications. These films were annealed in $2{\times}10^{-6}$ Torr vacuum furnace at the range of $500{\sim}1000^{\circ}C$. Optimum deposition atmosphere and annealing temperature were determined at $900^{\circ}C$ for 1 hr. in 8% $N_{2}$ gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of $768.93{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance (TCR) of -84 ppm/$^{\circ}C$ and a good longitudinal gauge factor (GF) of 4.12.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.376-377
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• 2006

This paper presents the characteristics of Ta-N thin film strain gauges that are suitable for harsh environemts, which were deposited on thermally oxidized Si substrates by DC reactive magnetronsputtering in an argon-nitrogen atmosphere (Ar-$N_2$ (4 ~ 16 %)). These films were annealed for 1 hr in $2{\times}10^{-6}$ Torr in a vacuum furnace with temperatures that ranged from 500 - $1000^{\circ}C$. The optimized deposition and annealing conditions of the Ta-N thin film strain gauges were determined using 8 % $N_2$ gas flow ratio and annealing at $900^{\circ}C$ for 1 hr. Under optimum formation conditions, the Ta-N thin film strain gauges obtained a high electrical resistivity, ${\rho}\;=\;768.93\;{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance, $TCR\;=\;-84\;ppm/^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12. The fabricated Ta-N thin film strain gauges are expected to be used inmicromachined pressure sensors and load cells that are operable under harsh environments.