• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.328-329
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• 2009

This paper presents the effect of organic Ag complex sintering temperature on the MEH-PPV photoluminescence (PL) properties. MEH-PPV and organic Ag complex was coated on the glass substrate by spin coating method. The coated Ag complex was sintered in an air atmosphere. The sintering temperature was varied from 100 to $200^{\circ}C$ and sintering time was 5 min. The Ag film sintered at temperature higher than $120^{\circ}C$ shows very low sheet resistance less than $0.5\;{\Omega}{/\square}$. The coated MEH-PPV measure photoluminescence (PL) intensity at 580 nm. The PL peak was shifted to the higher wavelength with increasing the sintering temperature.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.40-47
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• 1995

Electrical properties of ZnO ceramics based on Bi oxide was investigated in relation to sintering temperature. In the temperature range >$1150^{\circ}C$ to >$1350^{\circ}C$ the grain size increased from 9.mu.m to 20.mu.m when the sintering temperature was raised. The leakage current in the low voltage range increased as the potential barrier decreases, which is caused by increasing the grain size at high temperature. The dielectric characteristics of the ZnO ceramics was also affected by sintering temperature. Large dielectric constant was attributed, to the grainboundary layer of polycrystalline ZnO ceramics and decreasing grainboundary width. The variation of breakdown voltage with sintering temperature was attributed to the change of the donor concentration in the ZnO grain and grain size. The results showed that breakdown voltage increased decreasing grain size and donor concentration. Nonohmic coefficient was associated with the lower breakdown voltage per grainboundary layer due to the grain growth and higher donor concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.126-130
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• 2008

In this study, in order to develop low loss multilayer piezoelectric actuator, PZN-PZT ceramics were fabricated using $Li_2CO_3,\;Bi_2O_3$, CuO and ZnO as sintering aids, their structural, piezoelectric and dielectric characteristics were investigated according to the amount of ZnO addition, At the sintering temperature of $870^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of 0.4 wt% ZnO added specimen (sintered at $870^{\circ}C$) showed the optimum value of $7.812g/cm^3$, 0.535, 916, 1399, 335 pC/N respectively. Taking into consideration above piezoelectric properties of the specimen sintered at low temperature, it was concluded that PZN-PZT ceramics using 0.4 wt% ZnO as additive showed the optimum characteristics as the composition ceramics for low loss multilayer piezoelectric actuator application.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.6
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• pp.245-250
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• 2007

This study was focused on the effect of sintering additive and particle size on the low temperature sintering of $0.85CaWO_4-0.15SmNbO_4$ ceramics. With an increase of $CaV_2O_6$ content, the sintering temperature of the specimens was reduced from $1150^{\circ}C\;to\;800^{\circ}C$. The dielectric constant (K) and Qf value were increased with $CaV_2O_6$ content. These results are due to the enhancement of the density by the liquid phase sintering. Temperature coefficient of resonant frequency (TCF) was slightly shifted to the positive value with $CaV_2O_6$ content. Typically, K of 12.64, Qf of 23,106 GHz, TCF of $-34ppm/^{\circ}C$ were obtained for the specimens with 7 wt.% $CaV_2O_6$ sintered at $900^{\circ}C$ for 3 h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.326-329
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• 2002

In this study, to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, $0.02Pb(Sb_{1/2}Nb_{1/2})O_{3}-0.13Pb(Ni_{1/3}Nb_{2/3}O_3-0.85Pb(Zr,Ti)O_{3}$ system ceramics were manufactured with the variations of sintering temperature between 1,090 and $1240^{\circ}C$ and its dielectric and piezoelectric characteristics were investigated. With increasing the sintering temperature, electromechanical coupling factor (kp) and mechanical quality factor(Qm) were decreased. At $1,180^{\circ}C$ sintered specimen showed maximum value of 0.535 electromechanical coupling factor (kp). On the other hand,. The specimen sintered at $1,180^{\circ}C$ showed the maximum value of ${\varepsilon}r$=1,571, Qm=1,181 respectively.

• Journal of Ceramic Processing Research
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• v.22 no.5
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• pp.568-575
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• 2021

Glass-ceramic glazes were prepared using a CaO-MgO-Al2O3-SiO2 system and were used to fabricate low-temperature firing,high-hardness glazes in ceramic tiles. Additives (B2O3) and a nucleating agent (TiO2) were added to the glaze, and crystallineglazes were obtained by sintering at 1000 ~ 1100 oC for 30 or 60 min. X-ray diffraction analysis of the glazes suggested thatcordierite (Mg2Al4Si5O18) and anorthite (CaAl2Si2O8) crystal phases were present, and the peak intensity of the cordieritecrystal phase increased with increasing sintering temperature. All samples showed high crystallinities of 70% or more,irrespective of sintering temperature or time. The glaze density increased with increasing sintering temperature and decreasedat 1100 oC. The Vickers hardness test results of the glazes indicated high hardness values of 6.79 and 6.77 GPa after 30 minheat treatment at 1000 oC and 60 min at 1050 oC, respectively. Glass-ceramic glaze with high hardness at low temperature wasfabricated through crystallization of glaze for tiles.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.80-84
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• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.216-221
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• 2016

A sintering process for copper based films using a rapid thermal process with infrared lamps is proposed to improve the electrical properties. Compared with films produced by conventional thermal sintering, the microstructure of the copper based films contained fewer internal and interfacial pores and larger grains after the rapid thermal process. This high-density microstructure is due to the high heating rate, which causes the abrupt decomposition of the organic shell at higher temperatures than is the case for the low heating rate; the high heating rate also induces densification of the copper based films. In order to confirm the effect of the rapid thermal process on copper nanoink, copper based films were prepared under varying of conditions such as the sintering temperature, time, and heating rate. As a result, the resistivity of the copper based films showed no significant changes at high temperature ($300^{\circ}C$) according to the sintering conditions. On the other hand, at low temperatures, the resistivity of the copper based films depended on the heating rate of the rapid thermal process.

• Journal of the Korean Society of Industry Convergence
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• v.23 no.1
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• pp.25-32
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• 2020

Generally, high-temperature, high-pressure, high-priced sintering equipment is used for diamond sintering, and conductivity is a problem for improving the surface modification of the sintered body. In this study, to improve the efficiency of diamond sintering, we identified a new process and material that can be sintered at low temperature, and attempted to develop a composite thin film that can be discharged by doping boron gas to improve the surface modification of the sintered body. Sintered bodies were sintered by mixing Si and two diamonds in different particle sizes based on CIP molding and HIP molding. In CVD deposition, CVD was performed using WC-Co cemented carbide using CH₄ and H₂ gas, and the specimen was made conductive using boron gas. According to the experimental results of the sintered body, as the Si content is increased, the Vickers hardness decreases drastically, and the values of tensile strength, Young's modulus and fracture toughness greatly increase. Conductive CVD deposited diamond was boron deposited and discharged. As the amount of boron added increased, the strength of diamond peaks decreased and crystallinity improved. In addition, considering the release processability, tool life and adhesion of the deposition surface according to the amount of boron added, the appropriate amount of boron can be confirmed. Therefore, by solving the method of low temperature sintering and conductivity problem, the possibility of solving the existing sintering and deposition problem is presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.397-404
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• 2009

Effects of ceramic filler types and dose on the low temperature sintering and dielectric properties of ceramic/$CaO-Al_2O_3-SiO_2$ (CAS) glass composites were investigated. All of the specimens were sintered at $850{\sim}900^{\circ}C$ for 2 h, which conditions are required by the low-temperature co-firing ceramic (LTCC) technology. Ceramic fillers of $CaCO_3$, $Al_2O_3$, $CaCO_3-Al_2O_3$ mixture, and $CaCO_3-Al_2O_3$ compound ($CaAl_2O_4$), respectively, were used. The addition of $Al_2O_3$ yielded the crystalline phase of alumina, which was associated with the inhibition of sintering, while, $CaCO_3$ resulted in no apparent crystalline phase but the swelling was significant. The additions of $CaCO_3-Al_2O_3$ mixture and $CaAl_2O_4$, respectively, yielded the crystalline phases of alumina and anorthite, and the sintering properties of both composites increased with the increase of filler addition and the sintering temperature. In addition, the $CaAl_2O_4$/CAS glass composite, sintered at $900^{\circ}C$, demonstrated good microwave dielectric properties. In overall, all the investigated fillers of 10 wt% addition, except $CaCO_3$, yielded reasonable sintering (relative density, over 93 %) and low dielectric constant (less than 5.5), demonstrating the feasibility of the investigated composites for the application of the LTCC substrate materials.