• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.12-16
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• 2011

In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.233-238
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• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.380-381
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• 2007

This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.2 no.1
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• pp.3-9
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• 2009

Although Active matrix organic light emitting diode (AMOLED) display has a better image quality in terms of viewing angle, contrast ratio, and response time than liquid crystal displays (LCDs), it still has some critical issues such as lifetime, residual images, and brightness non-uniformity due to non-uniformity in electrical characteristics of driving TFTs and IR drops on supplied power line. Among them, we improved irrecoverable residual images of AMOLED displays which is mainly related to the hysteresis characteristics of driving TFTs. We consider four kinds of surface treatment conditions before gate oxide deposition for improving hysteresis characteristics. We can reduce the hysteresis level of p-channel TFT to 0.23 V, interface trap states between the poly-Si layer and gate insulator to $3.11{\times}10^{11}cm^{-2}$, and output current variation of p-channel TFT to 3.65 % through the surface treatment using ultraviolet light and H2 plasma. Therefore, the recoverable residual image problem of AMOLED displays can be improved by surface treatment using ultraviolet light and $H_2$ plasma.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.311-316
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• 2002

Two different approaches, namely two-step deposition process and Bias-Enhanced Nucleation (BEN) technique have been examined for deposition of high quality diamond thin film on polycrystalline Ni which has low chemical activity with the carbon neutrals provided from the $CH_4/H_2$mixtures. A two-step deposition process, consisted of pre-deposition of soot layer at lower temperatures and subsequent deposition at higher temperature condition, has been developed to deposit diamond layer directly on Ni substrate. Diamond particles were observed after deposition step at $925^{\circ}C$ for 5 hours and those particles seem to be nucleated from the soot layer pre-deposited at lower temperatures ($810^{\circ}C$). Diamond particles of a substantial size were found on Ni substrate after biasing -220 V for 10 minutes and subsequent deposition for 2 hours while no diamond particles were observed under the conditions without applied bias.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.517-524
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• 2013

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.639-645
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• 2012

Embossed $TiO_2$ thin films with high surface areas are achieved using soft-templates composed of monolayer polystyrene beads. The form of links between the beads in the templates is controlled by varying the $O_2$ plasma etching time on the templates, resulting in various templates with close-linked, nano-linked, and isolated beads. Room-temperature deposition of $TiO_2$ on the plasma-treated templates and calcination at $550^{\circ}C$ result in embossed films with tailored links between anatase $TiO_2$ hollow hemispheres. Although all the embossed films have similar surface areas, the sensitivity of films with nano-linked $TiO_2$ hollow hemispheres to 500 ppm CO and ethanol gases are much higher than that of films with close-linked and isolated hollow hemispheres, and the detection limits of them are as low as 0.6 ppm for CO and 0.1 ppm for ethanol. The strong correlation of sensitivity with the form of links between hollow hemispheres reveals the critical role of potential barriers formed at the links. The facile, large-scale, and on-chip fabrication of embossed $TiO_2$ films with nano-linked hollow hemispheres on Si substrate and the high sensitivity without the aid of additives give us a sustainable competitive advantage over various methods for the fabrication of highly sensitive $TiO_2$-based sensors.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2012.03a
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• pp.60-60
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• 2012

최근 들어서 소비성향의 고급화 추세와 고기능성 및 쾌적성의 추구는 발수성의 개발로 이어져왔다. Polyester, Nylon 등 다양한 합성섬유소재의 발전으로 발수기능이 상품가치의 중요한 요소로 자리잡고 있다. 더 나아가 표면과 이면이 서로 다른 특성을 가지도록 유도하여 편면기능성을 부여하는 가공을 응용한다면 더욱 더 고부가가치를 기대할 수 있다. 본 연구에서는 불소계로 발수 처리된 Polyester직물 및 Nylon/PU 혼방직물에 저온 플라즈마를 출력 50W, 1, 3, 5, 7 분 처리하여 편발수성을 검토하였다. 불소계 발수제로 코팅처리한 Polyester직물의 경우 5분간 Plasma처리하면 접촉각이 미처리 시료의 $149^{\circ}$에서 처리 후, 앞면 $71.56^{\circ}$, 뒷면 $126.94^{\circ}$,Nylon/PU 혼방직물의 경우에는 $155.3^{\circ}$에서 앞면 $63.24^{\circ}$, 뒷면 $139.26^{\circ}$로 크게 편면 친수화 되었다. 그 결과로 볼 때 플라즈마처리에 의해 편면발수 가공으로 서의 효과를 얻을 수 있었다. SEM 관찰을 통해 Polyester직물 및 Nylon/PU혼방 직물에 플라즈마 처리한 후 처리시간에 따른 펴면의 발수가공 층이 파괴되는 것을 알 수 있었다. 이는 표면에서의 발수효과가 플라즈마처리에 의해 친수화가 진행된 결과와 일치한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.563-568
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• 2012

Indium tin oxide (ITO) films were prepared using radio frequency (RF) magnetron sputtering method, magnets were equipped near the target in the sputter to bring the plasma near the target. The effect of magnetic field that brings the plasma near the substrate was compared with that of substrate heating. The effect of substrate heating on the grain size of the ITO thin film was larger than that of the magnetic field. However, the grain size of the ITO thin film was larger when the magnetic field was applied near the substrate during the sputtering process than when the substrate was not heated and the magnetic field was not applied. If stronger magnetic field is applied near the substrate during sputtering, it can be expected that the ITO thin film with good electrical conductivity and high transparency is obtained at low substrate temperature. When magnetic field of 90 Gauss was applied near the substrate during sputtering, the mobility of the ITO thin film increased from 15.2 $cm^2/V.s$ to 23.3 $cm^2/V.s$, whereas the sheet resistivity decreased from 7.68 ${\Omega}{\cdot}cm$ to 5.11 ${\Omega}{\cdot}cm$.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.1
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• pp.27.2-27.2
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• 2010

We have studied the formation of coronal holes (CHs) associated with halo CMEs. For this study, we used multi-wavelength data from Yohkoh Soft X-ray Telescope (SXT), GOES Soft X-ray Imager (SXI), SOHO EIT 195 ${\AA}$, SOHO MDI magnetogram, MLSO He I 10830 ${\AA}$, and BBSO H-alpha. The CHs are characterized by open magentic field regions with low emission, density, and temperature and their open fields drive high speed solar winds which cause geomagnetic storms. So far, the formation and the evolution of CHs are not well understood. The formation of the dark region associated with the eruption of a CME is well known as "coronal dimming" which may be caused by the mass depletion near the CME footpoint. It is different from a typical CH since it persists for only one or two days. In this study, we present three cases that show the formation of coronal holes which are associated with three halo CMEs: 1) 2000 Jul 14, 2) 2003 Oct 28, 3) 2005 May 13. In the first case, hot plasma was ejected during a weak eruption and then filled out the pre-existing CH. After the halo CME occurred, the hot plasma region becomes a CH again. In the second and the third cases, we found newly formed CHs just after their associated CMEs. All three coronal holes are associated with strong flares and persist over 3 days until they disappeared by the solar rotation. Examining the MDI magnetograms, we found that the magnetic polarity of each CH region has one polarity. Based on these results, we suggest that the coronal holes can be formed by the CMEs and they should be distinguished from the coronal dimming.