• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.98-102
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• 2019

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

• 열처리공학회지
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• 제23권5호
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• pp.269-276
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• 2010

This study has been carried out to the low temperature plasma nitriding treatment on the mechanical properties of stainless steel at temperature range between $400^{\circ}C$ and $500^{\circ}C$. It was found that there was precipitated to free CrN matrix below $400^{\circ}C$ and there was precipitated S-phase of STS 316L, ${\varepsilon}$-phase of STS 409L and ${\alpha}N$-phase of STS 420J2. STS 316L has formed relatively abundant CrN phase and ${\gamma}^{\prime}-Fe_4N$ phase at $500^{\circ}C$, alternatively STS 409L and STS 420J2 were more deeply nitrided than STS 316L at $500^{\circ}C$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.44.2-44.2
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• 2009

Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.

• 한국입자에어로졸학회지
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• 제5권3호
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• pp.123-131
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• 2009

This paper presents simulation results of particle transport in low-pressure, low-temperature plasma environment. The size dependent transport of particles in the plasma is investigated with a two-dimensional simulation tool developed in-house for plasma chamber analysis and design. The plasma model consists of the first two and three moments of the Boltzmann equation for ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The particle transport model takes into account all important factors, such as gravitational, electrostatic, ion drag, neutral drag and Brownian forces, affecting the motion of particles in the plasma environment. The particle transport model coupled with both neutral fluid and plasma models is simulated through a Lagrangian approach tracking the individual trajectory of each particle by taking a force balance on the particle. The size dependant trap locations of particles ranging from a few nm to a few ${\mu}m$ are identified in both electropositive and electronegative plasmas. The simulation results show that particles are trapped at locations where the forces acting on them balance. While fine particles tend to be trapped in the bulk, large particles accumulate near bottom sheath boundaries and around material interfaces, such as wafer and electrode edges where a sudden change in electric field occurs. Overall, small particles form a "dome" shape around the center of the plasma reactor and are also trapped in a "ring" near the radial sheath boundaries, while larger particles accumulate only in the "ring". These simulation results are qualitatively in good agreement with experimental observation.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2003년도 봄 학술발표회 논문집
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• pp.434-435
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• 2003

Physicochemical properties of a polymer surface significantly affect adhesion, wetting, and dyeing properties. In recent years, low temperature plasma technology has been widely used for surface modification of polymers. Surface fluorination by low temperature plasma treatment has been employed to improve the water and oily repellency of textile fabrics. However, very few results have been reported on soil release properties of the oxygen plasma treated textile fabrics. (omitted)

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.201-202
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• 2003

We developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of $CH_4/H_2$ gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.

• 한국해양공학회지
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• 제25권1호
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• pp.56-60
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• 2011

A low temperature plasma carburizing process was performed to AISI 304L austenitic stainless steel to achieve the enhancement of surface hardness without a compromise in their corrosion resistance. Attempts were made to investigate the influence of the processing temperatures on the surface-hardened layer during low temperature plasma carburizng in order to obtain the optimum processing conditions. The expanded austenite (${\gamma}C$) was formed on all the treated surfaces. Precipitates of chromium carbides were detected in the hardened layer (C-enriched layer) only for the specimen treated at $500^{\circ}C$. The hardened layer thickness of ${\gamma}C$ increased up to about $35\;{\mu}m$, with increasing treatment temperature. The surface hardness reached about 1000 $HK_{0.05}$, which is about 4 times higher than that of the untreated sample (250 $HK_{0.05}$). Minor loss in corrosion resistance was observed for the specimens treated at temperatures of $310^{\circ}C-450^{\circ}C$ compared with untreated austenitic stainless steel. Particularly, the precipitation of chromium carbides at $500^{\circ}C$ led to a significant decrease in the corrosion resistance.

• 한국염색가공학회지
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• 제19권1호
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• pp.45-52
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• 2007

Polyacrylonitrile(PAN) fiber was treated with low-temperature plasmas of argon and oxygen for surface modification, and its surface chemical structure and morphology were examined by a field emission scanning electron microscope(FESEM) and a Fourier-transform infrared microspectroscopy(IMS). The argon-plasma treatment caused the only mechanical effect by sputtering of ion bombardment, whereas the oxygen plasma brought about a chemical effect on the PAN fiber surface. The experimental evidences strongly suggested that cyclization of nitrile group and crosslinking were likely to occur in the oxygen-plasma treatment. On the other hand, with the argon-plasma treatment, numerous my pits resulted in ranging from several tens to hundreds nanometers in radius. The plasma sensitivity of functional groups such as C-H, $C{\equiv}N$, and O-C=O groups in the PAN fiber was dependent on their chemical nature of bonding in the oxygen-plasma, in which the ester group was the most sensitive to the plasma. Vacuum-ultraviolet(VUV) radiation emitted during plasma treatment played no substantial role to alter the surface morphology.

• 한국표면공학회지
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• 제50권4호
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• pp.272-276
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• 2017

The response of AISI 310 type austenitic stainless steel to the novel low temperature plasma carburizing process has been investigated in this work. This grade of stainless steel shows better corrosion resistance and high temperature oxidation resistance due to its high chromium and nickel content. In this experiment, plasma carburizing was performed on AISI 310 stainless steel in a D.C. pulsed plasma ion nitriding system at different temperatures in $H_2-Ar-CH_4$ gas mixtures. The working pressure was 4 Torr (533Pa approx.) and the applied voltage was 600 V during the plasma carburizing treatment. The hardness of the samples was measured by using a Vickers micro hardness tester with the load of 100 g. The phase of carburized layer formed on the surface was confirmed by X-ray diffraction. The resultant carburized layer was found to be precipitation free and resulted in significantly improved hardness and corrosion resistance.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.