• Title/Summary/Keyword: low temperature growth

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Humidity Properties of Sintered MnWO4 with a Low Temperature Firing Frit (저온소성 프릿이 첨가된 MnWO4의 소결체의 습도특성)

  • Jung, Byung-hae;So, Ji-young;Kim, Hyung-sun
    • Korean Journal of Materials Research
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    • v.13 no.2
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    • pp.120-125
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    • 2003
  • A low melting borosilicate glass frit was used as an adhesion promoter, which enables $MnWO_4$to be sintered with in a reasonable sintering temperature range ($800∼1000^{\circ}C$). The glass was evaluated for glass transition temperature ($Τ_{g}$ X) and thermal expansion coefficient($\alpha$). Mechanical property (Vickers hardness), grain growth, the comparison of lattice parameter and pore distribution of sintered $MnWO_4$ with the frit were methodically discussed. As sintering temperature increased, a typical liquid phase sintering showed the rapid grain growth and high densification of X$MnWO_4$grain, improvement of hardness (until $920^{\circ}C$) and different pore size distribution. Resistance of sintered $MnWO_4$varied from 450k$\Omega$ to 8.8M$\Omega$ under the measuring humidify ranging from 30 to 90%. Thus, the results will contribute to the application of glass frit containing sensor materials and their future use.

Low temperature growth of silicon thin film on sapphire substrate by liquid phase epitaxy for solar cell application (사파이어 기판을 사용한 태양전지용 실리콘 박막의 저온액상 에피탁시에 관한 연구)

  • Soo Hong Lee;Martin A. Green
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.2
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    • pp.131-133
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    • 1994
  • Deposition of silicon on pretreated sapphire substrates has been investigated by the liquid phase epitaxy method at low temperatures. An average 14 $\mu\textrm{m}$ thickness of silicon was grown over a large area on sapphire substrate originally coated with a much thinner silicon layer $[0.5 \mu\textrm{m} (100) Si/(1102) sapphire]$ at low temperatures from $(380^{\circ}C to 460^{\circ}C)$.

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Physiological and Ecological Studies on the Low Temperature Damages of Rice (Oryza sativia L.) (수도의 저온장해에 관한 생리 생태학적 연구)

  • 오윤진
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.26 no.1
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    • pp.1-31
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    • 1981
  • Experiments were conducted to investigate rice varietal response to low water and air temperatures at different growth stages from 1975 to 1980 in a phytotron in Suweon and in a cold water nursery in Chooncheon. Germination ability, seedling growth, sterility of laspikelets, panicle exertion, discoloration of leaves, and delay of heading of recently developed indica/japonica cross(I/J), japonica, and indica varieties at low air temperature or cold water were compared to those at normal temperature or natural conditions. The results are summarized as follows: 1. Practically acceptable germination rate of 70% was obtained in 10 days after initiation of germination test at 15\circ_C for japonica varieties, but 15 days for IxJ varieties. Varietal differences in germination ability at suboptimal temperature was greatest at 16\circ_C for 6 days. 2. Cold injury of rice seedlings was most severe at the 3.0-and 3.5-leaf stage and it was reduced as growth stage advanced. A significant positive correlation was observed between cold injury at 3-leaf stage and 6-leaf stage. 3. At day/night temperatures of 15/10\circ_C seedlings of both japonica and I/J varieties were dead in 42 days. At 20/15\circ_C japonica varieties produced tillers actively, but tillering of I/J varieties was retarded a little. At 25/15\circ_C, both japonica and I/J varieties produced tillers most actively. Increase in plant height was proportional to the increase in all varieties. 4. In I/J varieties the number of differentiated panicle rachis branches and spikelets was reduced at a day-night temperature of 20-15\circ_C compared to 25-20 or 30-25\circ_C, but not in japonica varieties although panicle exertion was retarded at 20-15\circ_C. The number of spikelets was not correlated with the number of primary rachis branches, but positively correlated with that of secondary rachis branches. 5. Heading of rice varieties treated with 15\circ_C air temperature at meiotic stage was delayed compared to that at tillering stage by 1-3 days and heading was delayed as duration of low temperature treatment increased. 6. At cold water treatment of 17\circ_C from tillering to heading stage, heading of japonica, I/J, and cold tolerant indica varieties was delayed 2-6, 3-9, and 4-5 days, respectively, Growth stage sensitive to delay of heading delay at water treatment were tillering stage, meiotic stage, and booting tage in that order, delay of heading was greater in indica corssed japonica(Suweon 264), japonica(Suweon 235), and cold tolerant indica(Lengkwang) varieties in that order. Delay of heading due to cold water treatment was positively correlated with culm length reduction and spikelet sterility. 7. Elongation of culms and exertion of panicles of rice varieties treated with low air temperature 17\circ_C. Culm length reduction rate of tall varieties was lower than that of short statured varieties at low temperature. Panicle exertion was most severaly retarded with low temperature treatment at heading stage. Generally, retardation of panicle exertion of 1/1 varieties was more severe than that of japonica varieties at low temperature. There was a positive correlation between panicle exertion and culm length at low temperature. 8. The number of panicles was increased with cold water treatment at tillering stage, but reduced at meiotic stage. As time of cold water treatment was conducted at earlier growth stage, culm length was shorter and panicle exertion poorer. 9. Sterility of all rice varieties was negligible at 17\circ_C for three days but 30.3-85.2% of strility was observed for nine-day treatment at 17\circ_C. Among the tested varieties, sterility of Suweon 264 and Milyang 42 was highest and that of Suweon 290 and Suweon 287 was lowest. The most sensitive growth stage to low temperature induced sterility was from 15 to 5 days before heading. There was positive correlation between sterility of rice plants treated with low temperature at meiotic and heading stage. 10. Percentage of spikelet sterility was greatest at cold water treatment at meiotic stage (auricle distance -15~-10cm) and it was higher in 1/1 (Suweon 264, Joseng tongil), japonica (Nongbaek, Towada), and cold tolerance indica(Lengkwang) varieties in the order. Level of cold water and position of young-ear affected on the sterility of varieties at meiotic stage; percentage of spikelet sterility of variety, Lengkwang, of which young-ear was located above the cold water level was high, but that of short statured variety, Suweon 264, of which young-ear was located in the cold water was lower. 11. Percentage of ripened grains was not reducted at 15\circ_C air temperature for three days at full heading stage in all varieties. However, at six-day low temperature treatment Suweon 287, Suweon 264 showed percentage of ripended grains lower than 60%, but at nine-day low temperature treatment all varieties showed percentage of ripened grains lower than 60%. Low temperature treatment of 17\circ_C from 10 days after heading for 20 days did not affect on the ripening of all varieties. 12. Uptake of nitrogen, phosphorous, potassium, calcium, and magnesium in whole plants was higher at average air temperature of 25\circ_C, but concentration of the elements was lower compared to those at 19\circ_C. However, both total uptake and concentration of manganese were higher at 19\circ_C compared to 25\circ_C. 13. Higher application of nitrogen, phosphorus, silicate, and compost increased yield of rice due to increased number of panicles and spike let fertility in cold water irrigated paddy.

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Hydrogenotrophic Sulfate Reduction in a Gas-Lift Bioreactor Operated at $9^{\circ}C$

  • Nevatalo, Laura M.;Bijmans, Martijn F. M.;Lens, Piet N. L.;Kaksonen, Anna H.;Puhakka, Jaakko A.
    • Journal of Microbiology and Biotechnology
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    • v.20 no.3
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    • pp.615-621
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    • 2010
  • The viability of low-temperature sulfate reduction with hydrogen as electron donor was studied with a bench-scale gas-lift bioreactor (GLB) operated at $9^{\circ}C$. Prior to the GLB experiment, the temperature range of sulfate reduction of the inoculum was assayed. The results of the temperature gradient assay indicated that the inoculum was a psychrotolerant mesophilic enrichment culture that had an optimal temperature for sulfate reduction of $31^{\circ}C$, and minimum and maximum temperatures of $7^{\circ}C$ and $41^{\circ}C$, respectively. In the GLB experiment at $9^{\circ}C$, a sulfate reduction rate of 500-600 mg $l^{-1}d^{-1}$, corresponding to a specific activity of 173 mg ${SO_4}^{2-}g\;VSS^{-1}d^{-1}$, was obtained. The electron flow from the consumed $H_2$-gas to sulfate reduction varied between 27% and 52%, whereas the electron flow to acetate production decreased steadily from 15% to 5%. No methane was produced. Acetate was produced from $CO_2$ and $H_2$ by homoacetogenic bacteria. Acetate supported the growth of some heterotrophic sulfate-reducing bacteria. The sulfate reduction rate in the GLB was limited by the slow biomass growth rate at $9^{\circ}C$ and low biomass retention in the reactor. Nevertheless, this study demonstrated the potential sulfate reduction rate of psychrotolerant sulfate-reducing mesophiles at suboptimal temperature.

Growth of Aluminum Nitride Thin Films by Atomic Layer Deposition and Their Applications: A Review (원자층 증착법을 이용한 AlN 박막의 성장 및 응용 동향)

  • Yun, Hee Ju;Kim, Hogyoung;Choi, Byung Joon
    • Korean Journal of Materials Research
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    • v.29 no.9
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    • pp.567-577
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    • 2019
  • Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of $150{\sim}550^{\circ}C$ with alkyl/amine or chloride precursors. Due to the low reactivity with $NH_3$ reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.

Evolution of surface morphology and roughness in Si and $_{0.7}$Ge$_{0.3}$ thin fimls (Si 및Si$_{0.7}$Ge$_{0.3}$ 박막의 표현형태 및 조도의 전개)

  • 이내웅
    • Journal of the Korean institute of surface engineering
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    • v.31 no.6
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    • pp.345-358
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    • 1998
  • The evolution of surface roughness and morphology in epitaxial Si and $Si_{0.7}Ge{0.3}$ alloys grown by UHV opm-beam sputter deposition onto nominally-singular, [100]-, and [110]-mi-scut Si(001) was investigated by stomic force microscopy and trasmission electron microscopy. The evolution of surface roughness of epitaxial Si films grown at $300^{\circ}C$ is inconsistent with conventional scaling and hyperscaling laws for kineti roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contraty to previous high-temperature growth results, the presence of steps during deposition at $300^{\circ}C$ increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughnesses on vicival substrates. Strain-induced surface roughening was found to dominate in $Si_{0.7}Ge{0.3}$ alloys grown on singular Si(001) substrates at $T_S\ge450^{\circ}C$ where the coherent islands are prererentially bounded along <100> directions and eshibt {105} facetting. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ($T_s\le 250^{\circ}C$), film surfaces roughen kinetically, due to limited adatom diffusiviry, but at far lower rates than in the higher-temperature strain-induced regime. There is an intermediate growth temperature range, however, over which alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation.

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Single Crystal Formation of BSCCO Thin Films by Epitaxy Growth (에피택시 성장으로 제작한 BSCCO 박막의 단결정 형성)

  • Cheon, Min-Woo;Yang, Sung-Ho;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.671-674
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    • 2004
  • BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO3) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795 $^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785\;^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

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Movpe Growth of InP/GaAs and GalnAs/GaAs from EDMln, TBP and TBAs (EDMln, TBP와 TBAs를 이용한 InP/GaAs와 GalnAs/GaAs의 MOVPE 성장)

  • 유충현
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.1
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    • pp.12-17
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    • 1998
  • The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

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Epitaxial Growth and Characterization of Zinc-blende CrAs/GaAs/MnAs/GaAs Multilayers

  • Wang W.H.;Manago T.;Akinaga H.
    • Journal of Magnetics
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    • v.11 no.1
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    • pp.1-4
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    • 2006
  • We report on the growth, structural and transport properties of zinc-blende CrAs/GaAs/MnAs/GaAs multilayers on GaAs(001) substrates. Structural analyses using in-situ reflection high-energy electron diffraction and exsitu cross-sectional transmission electron microscopy confirmed the realization of a zinc-blende crystal structure. Room temperature Hall measurements reveal that the as-grown multilayer exhibits p-type conductivity with a very low resistivity of $0.052\;\omega{cm}$, a high carrier concentration of $6.2X10^{19}\;cm^{-3}$ and a Hall mobility of $1.8\;cm^2/Vs$. We also observed a clear decrease of the resistivity in samples after low temperature annealing.

Thermal Shock Resistance and Thermal Expansion Behavior of $Al_2TiO_5$ Ceramics

  • Kim, Ik-Jin
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 2000.06a
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    • pp.179-193
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    • 2000
  • Aluminium titanate (Al₂TiO5) with an excellent thermal shock resistant and a low the expansion coefficient was obtained by solid solution with MgO, SiO₂, and ZrO₂ in the Al₂TiO5 lattice or in the grain boundary solution through electrofusion in an arc furnace. However, these materials have low mechanical strength due to the presence of microcracks developed by a large difference in thermal expansion coefficients along crystallographic axes. Pure Al₂TiO5 tends to decompose into α-Al₂O₃ and TiO₂-rutile in the temperature range of 750-1300℃ that rendered it apparently useless for industrial applications. Several thermal shock tests were performed: Long therm thermal annealing test at 1100℃ for 100h; and water quenching from 950 to room temperature (RT). Cyclic thermal expansion coefficients up to 1500℃ before and after decomposition tests was also measured using a dilatometer, changes in the microstructure, thermal expansion coefficients, Young's modulus and strengths were determined. The role of microcracks in relation to thermal shock resistance and thermal expansion coefficient is discussed.

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