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http://dx.doi.org/10.4283/JMAG.2006.11.1.001

Epitaxial Growth and Characterization of Zinc-blende CrAs/GaAs/MnAs/GaAs Multilayers  

Wang W.H. (Research Consortium for Synthetic Nano-Function Materials Project(SYNAF), Nanotechnology Research Institute(NRI), National Institute of Advanced Industrial Science and Technology(AIST))
Manago T. (Research Consortium for Synthetic Nano-Function Materials Project(SYNAF), Nanotechnology Research Institute(NRI), National Institute of Advanced Industrial Science and Technology(AIST))
Akinaga H. (Research Consortium for Synthetic Nano-Function Materials Project(SYNAF), Nanotechnology Research Institute(NRI), National Institute of Advanced Industrial Science and Technology(AIST))
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Abstract
We report on the growth, structural and transport properties of zinc-blende CrAs/GaAs/MnAs/GaAs multilayers on GaAs(001) substrates. Structural analyses using in-situ reflection high-energy electron diffraction and exsitu cross-sectional transmission electron microscopy confirmed the realization of a zinc-blende crystal structure. Room temperature Hall measurements reveal that the as-grown multilayer exhibits p-type conductivity with a very low resistivity of $0.052\;\omega{cm}$, a high carrier concentration of $6.2X10^{19}\;cm^{-3}$ and a Hall mobility of $1.8\;cm^2/Vs$. We also observed a clear decrease of the resistivity in samples after low temperature annealing.
Keywords
half-metallic ferromagnets; zinc-blende multilayer; hall effect;
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