• 제목/요약/키워드: low swing

검색결과 261건 처리시간 0.021초

Strained-SiGe Complementary MOSFETs Adopting Different Thicknesses of Silicon Cap Layers for Low Power and High Performance Applications

  • Mheen, Bong-Ki;Song, Young-Joo;Kang, Jin-Young;Hong, Song-Cheol
    • ETRI Journal
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    • 제27권4호
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    • pp.439-445
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    • 2005
  • We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

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High-performance thin-film transistor with a novel metal oxide channel layer

  • Son, Dae-Ho;Kim, Dae-Hwan;Kim, Jung-Hye;Sung, Shi-Joon;Jung, Eun-Ae;Kang, Jin-Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.222-222
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    • 2010
  • Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

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컵버너시험에서 소화기준에 따른 불활성기체의 소화농도에 대한 정량적 차이 (Quantitative Difference in the Extinguishing Concentration of Inert Gases with Fire Suppression Criteria in a Cup Burner Test)

  • 조재호;황철홍
    • 한국화재소방학회논문지
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    • 제28권3호
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    • pp.34-42
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    • 2014
  • 본 연구에서는 $CH_4$$C_3H_8$ 연료의 컵버너 비예혼합화염에서 Swing, Rotation, Lifted 및 Blow-out과 같은 화염 불안정성을 발생시키는 불활성기체($N_2$, Ar, $CO_2$ 및 He)의 농도를 측정하였으며, 소화기준(즉, 화염날림 또는 화염불안정성 개시)에 따른 소화농도의 정량적 차이를 검토하였다. 소화농도의 차이는 부상화염의 발생 그리고 낮은 소화성능의 불활성기체일수록 증가됨을 확인하였다. 소화기준에 따른 소화농도의 최대 차이는 $C_3H_8$-air 비예혼합화염의 최대 연료유속의 조건(1.3 cm/s)에서 약 35%이다. 또한 화염 불안정성의 개시를 기준으로 측정된 소화농도는 정확한 그리고 경제적 설계 농도의 관점에서 유용한 정보를 제공할 것으로 기대된다.

고온에서 Schottky Barier SOI nMOS 및 pMOS의 전류-전압 특성 (Current-Voltage Characteristics of Schottky Barrier SOI nMOS and pMOS at Elevated Temperature)

  • 가대현;조원주;유종근;박종태
    • 대한전자공학회논문지SD
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    • 제46권4호
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    • pp.21-27
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    • 2009
  • 본 연구에서는 고온에서 Schottky barrier SOI nMOS 및 pMOS의 전류-전압 특성을 분석하기 위해서 Er 실리사이드를 갖는 SB-SOI nMOSFET와 Pt 실리사이드를 갖는 SB-SOI pMOSFET를 제작하였다. 게이트 전압에 따른 SB-SOI nMOS 및 pMOS의 주된 전류 전도 메카니즘을 온도에 따른 드레인 전류 측정 결과를 이용하여 설명하였다. 낮은 게이트 전압에서는 온도에 따라 열전자 방출 및 터널링 전류가 증가하므로 드레인 전류가 증가하고 높은 게이트 전압에서는 드리프트 전류가 감소하여 드레인 전류가 감소하였다. 고온에서 ON 전류가 증가하지만 드레인으로부터 채널영역으로의 터널링 전류 증가로 OFF 전류가 더 많이 증가하게 되므로 ON/OFF 전류비는 감소함을 알 수 있었다. 그리고 SOI 소자나 bulk MOSFET 소자에 비해 SB-SOI nMOS 및 pMOS의 온도에 따른 문턱전압 변화는 작았고 subthreshold swing은 증가하였다.

RF Magnetron Sputtering으로 증착된 ZnO의 증착 특성과 이를 이용한 Thin Film Transistor특성 (Thin Film Transistor Characteristics with ZnO Channel Grown by RF Magnetron Sputtering)

  • 김영웅;최덕균
    • 마이크로전자및패키징학회지
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    • 제14권3호
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    • pp.15-20
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    • 2007
  • 플라스틱 기판에 적용이 가능한 최대 공정온도 $270^{\circ}C$ 이하에서 ZnO-TFT 소자를 제작하였다. ZnO-TFT 소자는 bottom gate 구조로 제작되었으며, ICP-CVD로 형성된 $SiO_2$ 산화물 게이트 공정을 제외하고는 모든 박막증착 공정은 RF-magnetron sputtering process를 이용하였다. ZnO 박막은 Ar과 $O_2$ gas 유량의 비율에 따라 여러 가지 조건에서 RF-magnetron sputtering 시스템을 이용하여 상온에서 증착하였다. Ar과 $O_2$ gas의 비율에 따라 제작된 TFT 소자는 모두 enhancement 모드의 소자특성을 나타내었고, 또한 가시광선영역에 있어 80% 이상의 높은 투과율을 보였다. ZnO 증착시 순수 Ar을 사용하여 제작된 ZnO-TFT의 경우에, $1.2\;cm^2/Vs$의 field effect mobility, 8.5 V의 threshold voltage, 그리고 $5{\times}10^5$의 높은 on/off ratio, 1.86 V/decade의 swing voltage로 가장 우수한 전기적 특성을 보였다.

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골프 클럽에 따른 타격자세의 변화 (Changes of Impact Variables by the Change of Golf Club Length)

  • 성낙준
    • 한국운동역학회지
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    • 제15권4호
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    • pp.181-189
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    • 2005
  • To know the proper impact posture and changes for the various clubs, changes of impact variables according to the change of golf club length was investigated. Swing motions of three male low handicappers including a professional were taken using two high-speed video cameras. Four clubs iron 7, iron 5, iron 3 and driver (wood 1) were selected for this experiment. Three dimensional motion analysis techniques were used to get the kinematical variables. Mathcad and Kwon3D motion analysis program were used to analyze the position, distance and angle data in three dimensions. Major findings of this study were as follows. 1. Lateral position of the head remained more right side of the target up to 3.5cm compared to the setup as the length of the club increased. 2. Left shoulder raised up to 5cm and right shoulder lowered up to 2.5cm compared to setup. The shoulder line opened slightly (maximum 11 degrees) to the target line. 3. Forward lean angle of the trunk decreased up to 4 degrees (more erected) compared to setup. 4. Side lean angle of the trunk increased compared to setup and increased up to 16 degrees as the club length increased. 5. The pelvis moved to the target line direction horizontally and opened up to 31 degrees. Right hip moves laterally to the grip position at the setup. 6. Flexion of the left leg maintained almost constantly but the right leg flexed up to 11 degrees compared to setup. 7. Left arm is straightened but the right arm flexed about 20degrees compared to straight. 8. Center of the shoulders were in front of the knees and toes of the feet. 9. Hands moved to the left (8.7cm), forward (5.7cm) and upward (11.6cm) compared to the setup. This is because of the rotation of pelvis and shoulders. 10. Shaft angle to the ground was smaller than the lie angle of the clubs but it increased close to the lie of the clubs at impact.

가상현실 대화용 가상걸음 장치의 지능제어 (Intelligent Control of a Virtual Walking Machine for Virtual Reality Interface)

  • 윤정원;박장우;류제하
    • 제어로봇시스템학회논문지
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    • 제12권9호
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    • pp.926-934
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    • 2006
  • This paper proposes intelligent control of a virtual walking machine that can generate infinite floor for various surfaces and can provide proprioceptive feedback of walking to a user. This machine allows users to participate in a life-like walking experience in virtual environments with various terrains. The controller of the machine is implemented hierarchically, at low-level for robust actuator control, at mid-level fur platform control to compensate the external forces by foot contact, and at high-level control for generating walking trajectory. The high level controller is suggested to generate continuous walking on an infinite floor for various terrains. For the high level control, each independent platform follows a man foot during the swing phase, while the other platform moves back during single stance phase. During double limb support, two platforms manipulate neutral positions to compensate the offset errors generated by velocity changes. This control can, therefore, satisfy natural walking conditions in any direction. Transition phase between the swing and the stance phases is detected by using simple switch sensor system, while human foot motions are sensed by careful calibration with a magnetic motion tracker attached to the shoe. Experimental results of walking simulations at level ground, slope, and stairs, show that with the proposed machine, a general person can walk naturally on various terrains with safety and without any considerable disturbances. This interface can be applied to various areas such as VR navigations, rehabilitation, and gait analysis.

혐기/호기 순산소 생물막공법에 의한 산업폐수의 유기물 및 TKN 제거 성능평가 (Performance Evaluation for the A/O Pure-Oxygen Biofilm (POB) Process on the Removal of Organics and TKN in the Industrial Wastewater)

  • 장암;김홍석;김인수
    • 대한환경공학회지
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    • 제22권5호
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    • pp.837-847
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    • 2000
  • 고농도의 유기물과 질소성분을 포함하는 맥주공장과 석유화학 산업폐수를 처리하기 위하여 실험실 규모의 혐기/호기 순산소-생물막 공정 (POB)이 이용되었다. 그리고 A/O POB process와 장기폭기법의 경제성분석도 수행되었다. TOC 농도기준으로 70에서 150 mg TOC/L 범위의 맥주공장폐수가 유입되었을 때 TOC 제거율은 각각 92% 이상으로 좋은 효율을 보였다. 석유화학폐수의 경우 초기 TOC제거율은 52%로 매우 낮았지만 32일 이후에는 86%의 TOC 제거율을 나타내었으며, TKN의 제거율은 유입부하가 증가함에도 불구하고 27일 이후에 71%의 제거율로 유지되었다. 순산소 생물막공법은 초기 건설비인 순산소 발생장치 (PSA)와 메디아 설치비가 소요되기 때문에 장기폭기법에 비하여 약 2.9배 정도 높았다. 이에 반해서 순산소 생물막공법은 극히 적은 잉여슬러지 발생량과 슬러지의 재순환의 불필요, 낮은 에너지 소요량 등의 많은 장점들로 인하여 운전비와 유지비가 약 2.5배 정도 장기폭기법 보다 적었다. 그러므로 장기적인 측면에서 보면 순산소 생물막공법이 높은 처리효율을 가지면서도 장기폭기법보다 경제적인 것으로 생각된다.

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1.5V 256kb eFlash 메모리 IP용 저면적 DC-DC Converter 설계 (Design of Low-Area DC-DC Converter for 1.5V 256kb eFlash Memory IPs)

  • 김영희;김홍주;하판봉
    • 한국정보전자통신기술학회논문지
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    • 제15권2호
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    • pp.144-151
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    • 2022
  • 본 논문에서는 배터리 응용을 위해 저면적 DC-DC 변환기를 갖는 1.5V 256kb eFlash 메모리 IP를 설계하였다. 저면적 DC-DC 변환기 설계를 위해서 본 논문에서는 단위 전하펌프 회로에서 펌핑 노드의 전압을 VIN 전압으로 프리차징해주는 회로인 크로스-커플드 (cross-coupled) 5V NMOS 트랜지스터 대신 5V NMOS 프리차징 트랜지스터를 사용하였고, 펌핑 노드의 부스팅된 전압을 VOUT 노드로 전달해주는 트랜지스터로 5V 크로스-커플드 PMOS 트랜지스터를 사용하였다. 한편 5V NMOS 프리차징 트랜지스터의 게이트 노드는 부스트-클록 발생기 회로를 이용하여 VIN 전압과 VIN+VDD 전압으로 스윙하도록 하였다. 그리고 펌핑 커패시터의 한쪽 노드인 클록 신호를 작은 링 발진 (ring oscillation) 주기 동안 full VDD로 스윙하기 위해 각 단위 전하펌프 회로마다 로컬 인버터 (local inverter)를 추가하였다. 그리고 지우기 모드 (erase mode)와 프로그램 모드 (program mode)에서 빠져나와 대기 (stand-by) 상태가 될 때 부스팅된 전압을 VDD 전압으로 프리차징해주는 회로를 사용하는 대신 HV (High-Voltage) NMOS 트랜지스터를 사용하여 VDD 전압으로 프리차징 하였다. 이와같이 제안된 회로를 DC-DC 변환기 회로에 적용하므로 256kb eFLASH IP의 레이아웃 면적은 기존 DC-DC 변환기 회로를 사용한 경우보다 6.5% 정도 줄였다.

남자프로골퍼의 30 야드 칩샷과 피치샷 동작의 운동학적 차이 (Kinematical Differences of the Male Professional Golfers' 30 Yard Chip Shot and Pitch Shot Motion)

  • 편은경;박영훈;염창홍;손승;서국웅;서국은
    • 한국운동역학회지
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    • 제17권2호
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    • pp.177-185
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    • 2007
  • Even though there were no clear definitions of the short game and short game distance, short game capability is crucial for a good golf score. Generally, chip shot and pitch shot are regarded as two principal components of the short game. Chip shot is a short, low trajectory shot played to the green or from trouble back into play. Pitch shot is a high trajectory shot of short length. Biomechanical studies were conducted usually to analyze full swing and putting motions. The purpose of the study was to reveal the kinematical differences between professional golfers' 30 yard $53^{\circ}wedge$ chip shot and $56^{\circ}wedge$ pitch shot motions. Fifteen male professional golfers were recruited for the study. Kinematical data were collected by the 60 Hz three-dimensional motion analysis system. Statistical comparisons were made by paired t-test, ANOVA, and Duncan of the SPSS 12.0K with the $\alpha$ value of .05. Results show that both the left hand and the ball were placed left of the center of the left and right foot at address. The left hand position of the chip shot was significantly left side of that of the pitch shot. But the ball position of the pitch shot was significantly right side of that of the chip shot. All body segments aligned to the left of the target line, open, at address. Except shoulder, there were no significant pelvis, knee, and feet alignment differences between chip shot and pitch shot. These differences at address seem for the ball height control. Pitch shot swing motions(the shoulder and pelvis rotation and the club head travel distance) were significantly bigger than those of the chip shot. Club head velocity of the pitch shot was significantly faster than that of the chip shot at the moment of impact. This was for the same shot length control with different lofted clubs. Swing motion differences seem mainly caused by the same shot length control with different ball height control.