• Journal of Digital Contents Society
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• v.8 no.2
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• pp.213-225
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• 2007

This study confirms Busan area medium and small enterprises' position and analyzed present condition and actual conditions of swing Korea measure and consumer's attitude about measure in general circumstance that our country medium and small enterprises is placed in information. According to result that analyze Busan area medium and small enterprises' information level, Busan was expose by whole country average low including the electron commercial transaction rate. When consider weight that Busan economy occupies in gross domestic product, information differential of medium and small enterprises of Busan area is subject that must improve urgently and seriousness point is true that information differential of manufacturing industry is main factor more. Therefore, urgent agenda should be the activation of manufacturing industry information assistance measure and extension of current manufacturing technique information assistance business for Busan economy. Also, at problem solution progress, Busan is thought that must come looking for seat role actively.

• Korean Journal of Applied Biomechanics
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• v.17 no.2
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• pp.131-143
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• 2007

In this study, we are concluded like this : 5 men who are soccer player of P university in B city measure the Electromyography with an angle of motion according to kinesiotaping's application when practicing in-step kick. When exercising in-step kick, the change of realization of muscle load of lower limbs enhence Gastrocnemius Lateralis and Vastus Medialis in the section of backswing, and improve Tibialis Anterior, Vastus Medialis, Rectus Femoris prior to impact after back-swing. Before impact, it mainly impoved Tibialis Anterior, Vastus Medialis, Rectus Femoris. After impact, it generally improved Gastrocnemius Lateralis, Vastus Medialis. Average integral electromyography value, it was such a small difference(; the difference of the value in Tibialis Anterior, Rectus Femoris, Vastus Medialis) that we can't compare case of after taping than before. In Electromyography, in case of after taping was considerably decreased at Gastrocnemius Lateralis, there was statistically significant difference between before and after. It was a little increased, after taping than before at Knee angle. And degree was a little decreased at Ankle angle. But, It's so delicate difference, there was not statistically significant difference between before and after.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.261-266
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• 1998

This paper describes the fabrication and characterization of dual-polysilicon gated surface channel 0.1$\mu\textrm{m}$ CMOSFETs using BF2 and arsenic as channel dopants. We have used and LDD structure and 40${\AA}$ gate oxide as an insulator. To suppress short channel effects down to 0.1$\mu\textrm{m}$ channel length, shallow source/drain extensions implemented by low energy implantation and SSR(Super Steep Retrograde) channel structure were used. The threshold voltages of fabricated CMOSFETs are 0.6V. The maximum transconductance of nMOSFET is 315${\mu}$S/$\mu\textrm{m}$, and that of pMOSFET is 156 ${\mu}$S/$\mu\textrm{m}$. The drain saturation current of 418 ${\mu}$A/$\mu\textrm{m}$, 187${\mu}$A/$\mu\textrm{m}$ are obtained. Subthreshold swing is 85mV/dec and 88mV/dec, respectively. DIBL(Drain Induced Barrier Lowering) is below 100mV. In the device with 2000${\AA}$ thick gate polysilicon, depletion in polysilicon near the gate oxide results in an increase of equivalent gate oxide thickness and degradation of device characteristics. The gate delay time is measured to be 336psec at operation voltage of 2V.

• Journal of Electrical Engineering and Technology
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• v.3 no.4
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• pp.566-570
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• 2008

Vertical nanowire SGFETs(Surrounding Gate Field Effect Transistors) provide full gate control over the channel to eliminate short channel effects. This paper presents design and characterization of a differential pair amplifier using NMOS and PMOS SGFETs with a 10nm channel length and a 2nm channel radius. The amplifier dissipates $5{\mu}W$ power and provides 5THz bandwidth with a voltage gain of 16, a linear output voltage swing of 0.5V, and a distortion better than 3% from a 1.8V power supply and a 20aF capacitive load. The 2nd and 3rd order harmonic distortions of the amplifier are -40dBm and -52dBm, respectively, and the 3rd order intermodulation is -24dBm for a two-tone input signal with 10mV amplitude and 10GHz frequency spacing. All these parameters indicate that vertical nanowire surrounding gate transistors are promising candidates for the next generation high speed analog and VLSI technologies.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.287.1-287.1
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• 2014

본 연구에서는 현재 디스플레이에서 가장 널리 이용되는 저온 polycrystalline silicon (poly-Si)의 결정화 방법에 따른 thin-film transistor (TFT)의 전기적 특성을 분석하였다. 분석에 이용된 결정화 방식은 Excimer Laser Annealing (ELA)와 Metal Induced Crystallization (MIC)이다. ELA와 MIC TFTs의 전기적 특성 측정을 통한 분석결과 ELA와 MIC poly-Si TFTs의 전기적 특성 [field-effect mobility (${\mu}_{FE}$), on/off current ratio ($I_{ON}/I_{OFF}$), sub-threshold swing (SS)]은 큰 차이는 없지만, ELA를 이용한 poly-Si TFT의 전기적 특성이 조금 우수하다. 하지만, MIC poly-Si TFT의 경우 threshold voltage ($V_{TH}$)가 0V에 보다 가까울 뿐만 아니라, 전기적 스트레스를 통한 신뢰성 확인 시 ELA poly-Si TFT보다 조금 더 안정적이다. 이는 ELA의 경우 좁은 면에 선형 레이저 빔으로 조사하면서 생기는 hill-lock의 영향으로 표면이 거칠고 균일하지 못하여 바이어스 인가시 생기는 문제이다. 또한 MIC는 금속 촉매를 이용해 결정립 경계를 확장하고 결정 크기를 키워 대면적화에 유리하다. Thermal Stress에서는 (from 293K to 373K) TFT에 점차 높은 온도를 가하자 MIC poly-Si TFT의 경우 off 상태에서 누설 전류 값이 증가하며 열에 민감한 반응을 보이는 것을 확인하였다.

• Proceedings of the Membrane Society of Korea Conference
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• 2002.04a
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• pp.23-46
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• 2002

The cryogenic, pressure swing adsorption and membrane methods have been used to separate air into nitrogen and oxygen. The air separation membrane is made of the polymers, of which manufacturing process is complicate and it causes a little high production cost. Polymer membrane has temperature limit in usage and low durability even at moderate temperature. Therefore, inorganic membranes have been studied for years. As formation of unit alumino-silicate membrane, unit cells of membrane were made with a few coating methods. In this study the dipping of substrate into sols, application of vacuum to the opposite side of substrate with coating and rotating of the substrate in the sols were found as good coating memthods to make a uniform coating and to control the thickness of membrane. The membrane coats were examined by SEM and XRD. The sample ESZl-1 was compared with those of samples that prepared by another method. The present developed coating methods could be applied to the various types of zeolite membrane formation, that is A- X-, Y- ZSM- and MCM-types of membranes. Also these membrane forming methods could be applied to formation of catalyst absorbed zeolite membrane, of which zeolite absorb the catalytic metals. The product obtained from these coating methods could be applied to the industrial gas and liquid phase catalytic reaction and separation processes.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.18 no.6
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• pp.642-651
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• 2009

The history of excavator design is not long enough which still causes most of the design considerations to be focused on static analysis or simple functional improvement based on static analysis. However, the real forces experiencing on each component of excavator are highly transient and impulsive. Therefore, the prediction and the evaluation of the movement of the excavator by dynamic load in the early design stage through the dynamic transient analysis of the excavator and ensuring of design technique plays an importance role to reduce development-cost, shorten product-deliver, decrease vehicle-weight and optimize the system design. In this paper, Commercial software DADS and ANSYS help to develop the track model of the crawler type excavator, and to evaluate the performance and the dynamic characteristics of excavator with various simulations. For that reason, the track of crawler type excavator is modelled with DADS Track Vehicle Superelement, and the reaction forces on the track rollers were predicted through the driving simulation. Also, the upper frame and cabin vibration characteristics, at the low RPM idle state, were evaluated with engine rigid body modelling. And flexibility body effects were considered to determine the more accurate joint reaction forces and accelerations under the upper frame swing motion.

• Transactions of the Korean hydrogen and new energy society
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• v.27 no.2
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• pp.135-143
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• 2016

Biogas is a renewable fuel from anaerobic digestion of organic matters such as sewage sludge, manure and food waste. Raw biogas consists mainly of methane, carbon dioxide, hydrogen sulfide, and water. Biogas may also contain other impurities such as siloxanes, halogenated hydrocarbons, aromatic hydrocarbons. Efficient power technologies such as fuel cell demand ultra-low concentration of containments in the biogas feed, imposing stringent requirements on fuel purification technology. Biogas is upgraded from pressure swing adsorption after biogas purification process which consists of water, $H_2S$ and siloxane removal. A polymer electrolyte membrane fuel cell power plant is designed to operate on reformate produced from upgraded biogas by steam reformer.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1339-1340
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• 2007

본 연구에서는 이종 차원 나노선과 나노입자의 결합에 따른 단일 나노선 소자의 전기적 특성 및 메모리 효과를 연구하였다. 열증착법으로 성장 된 p 형 Si 나노선에 Atomic Layer Deposition (ALD) 방법으로 10nm의 $Al_{2}O_{3}$를 증착한 후 Low Precensure - Chemical Vapor Deposition (LP-CVD)를 이용하여 Polycrystalline Sicon(Poly-Si)을 Si 나노선 위에 5nm 증착하고 습식 에칭법을 이용하여 poly Si 내의 $SiO_x$를 제거하여 Si 나노입자를 Si 나노선 위에 형성시켰다. 그 후 포토리소그래피 공정을 이용하여 Top gate 형태의 나노선-나노입자 이종결합 Field-Effect Transistor (FET) 소자를 제작하여 게이트 전압에 따른 드레인 전류-전압($I_{DS}-V_{DS}$)의 변화를 측정하여 나노선의 전기 소자로서의 특성을 확인하고, 게이트 전압을 양방향으로 swing 하면서 인가하여 $I_{DS}$ 전류 특성이 변화하는 것을 통해 메모리 효과를 조사하였다. 또한 나노입자의 결합이 게이트 전압의 인가 시간에 따라 드레인 전류에 영향을 미치는 것을 확인하여 메모리 소자로서의 가능성을 확인하였다.