• ETRI Journal
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• v.27 no.4
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• pp.439-445
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• 2005

We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.222-222
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• 2010

Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

• Fire Science and Engineering
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• v.28 no.3
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• pp.34-42
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• 2014

The concentrations of inert gases ($N_2$, Ar, $CO_2$ and He) required to induce the flame instabilities such as swing, rotation, lifted and blow-out were measured in a cup burner nonpremixed flames for $CH_4$ and $C_3H_8$ fuels. Quantitative differences in the extinguishing concentration with fire suppression criteria (i.e. blow-out or onset of flame instability) were also examined. It was found that the difference in extinguishing concentration was increased with the appearance of lifted flame and the low extinguishing performance of inert gaseous. The maximum difference in extinguishing concentration with the suppression criteria was approximately 35% at the highest fuel velocity condition (1.3 cm/s) for the $C_3H_8$-air nonpremixed flame. It can be also expected that the extinguishing concentration by the criteria based on the onset of flame instability will provide the useful information from the viewpoint of the accurate and economical design concentration.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.21-27
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• 2009

In this work, Er-silicided SB-SOI nMOSFET and Pt-silicided SB-SOI pMOSFET have been fabricated to investigate the current-voltage characteristics of Schottky barrier SOI nMOS and pMOS at elevated temperature. The dominant current transport mechanism of SB nMOS and pMOS is discussed using the measurement results of the temperature dependence of drain current with gate voltages. It is observed that the drain current increases with the increase of operating temperature at low gate voltage due to the increase of thermal emission and tunneling current. But the drain current is decreased at high gate voltage due to the decrease of the drift current. It is observed that the ON/Off current ratio is decreased due to the increased tunneling current from the drain to channel region although the ON current is increased at elevated temperature. The threshold voltage variation with temperature is smaller and the subthreshold swing is larger in SB-SOI nMOS and pMOS than in SOI devices or in bulk MOSFETs.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.15-20
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• 2007

Low temperature processed ZnO-TFTs on glass below $270^{\circ}C$ for plastic substrate applications were fabricated and their electrical properties were investigated. Films in ZnO-TFTs with bottom gate configuration were made by RF magnetron sputtering system except for $SiO_2$ gate oxide deposited by ICP-CVD. ZnO channel films were grown on glass with various Ar and $O_2$ flow ratios. All of the fabricated ZnO-TFTs showed perfectly the enhancement mode operation, a high optical transmittance of above 80% in visible ranges of the spectrum. In the ZnO-TFTs with pure Ar process, the field effect mobility, threshold voltage, and on/off ratio were measured to be $1.2\;cm^2/Vs$, 8.5 V, and $5{\times}10^5$, respectively. These characteristic values are much higher than those of the ZnO-TFTs of which ZnO channel layers were processed with additional $O_2$ gas. In addition, ZnO-TFT with pure Af process showed smaller swing voltage of 1.86v/decade compared to those with $Ar+O_2$ process.

• Korean Journal of Applied Biomechanics
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• v.15 no.4
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• pp.181-189
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• 2005

To know the proper impact posture and changes for the various clubs, changes of impact variables according to the change of golf club length was investigated. Swing motions of three male low handicappers including a professional were taken using two high-speed video cameras. Four clubs iron 7, iron 5, iron 3 and driver (wood 1) were selected for this experiment. Three dimensional motion analysis techniques were used to get the kinematical variables. Mathcad and Kwon3D motion analysis program were used to analyze the position, distance and angle data in three dimensions. Major findings of this study were as follows. 1. Lateral position of the head remained more right side of the target up to 3.5cm compared to the setup as the length of the club increased. 2. Left shoulder raised up to 5cm and right shoulder lowered up to 2.5cm compared to setup. The shoulder line opened slightly (maximum 11 degrees) to the target line. 3. Forward lean angle of the trunk decreased up to 4 degrees (more erected) compared to setup. 4. Side lean angle of the trunk increased compared to setup and increased up to 16 degrees as the club length increased. 5. The pelvis moved to the target line direction horizontally and opened up to 31 degrees. Right hip moves laterally to the grip position at the setup. 6. Flexion of the left leg maintained almost constantly but the right leg flexed up to 11 degrees compared to setup. 7. Left arm is straightened but the right arm flexed about 20degrees compared to straight. 8. Center of the shoulders were in front of the knees and toes of the feet. 9. Hands moved to the left (8.7cm), forward (5.7cm) and upward (11.6cm) compared to the setup. This is because of the rotation of pelvis and shoulders. 10. Shaft angle to the ground was smaller than the lie angle of the clubs but it increased close to the lie of the clubs at impact.

• Journal of Institute of Control, Robotics and Systems
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• v.12 no.9
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• pp.926-934
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• 2006

This paper proposes intelligent control of a virtual walking machine that can generate infinite floor for various surfaces and can provide proprioceptive feedback of walking to a user. This machine allows users to participate in a life-like walking experience in virtual environments with various terrains. The controller of the machine is implemented hierarchically, at low-level for robust actuator control, at mid-level fur platform control to compensate the external forces by foot contact, and at high-level control for generating walking trajectory. The high level controller is suggested to generate continuous walking on an infinite floor for various terrains. For the high level control, each independent platform follows a man foot during the swing phase, while the other platform moves back during single stance phase. During double limb support, two platforms manipulate neutral positions to compensate the offset errors generated by velocity changes. This control can, therefore, satisfy natural walking conditions in any direction. Transition phase between the swing and the stance phases is detected by using simple switch sensor system, while human foot motions are sensed by careful calibration with a magnetic motion tracker attached to the shoe. Experimental results of walking simulations at level ground, slope, and stairs, show that with the proposed machine, a general person can walk naturally on various terrains with safety and without any considerable disturbances. This interface can be applied to various areas such as VR navigations, rehabilitation, and gait analysis.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.5
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• pp.837-847
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• 2000

For the treatment of wastewaters generated from beer industry and petrochemical company with high organic and nitrogen contents, laboratory scale of A/O Pure-Oxygen Biofilm (POB) process was developed and studied by means of the comparative economic analysis with extended aeration process. When the wastewater of beer company was initially treated by the A/O POB process in the ranges of 70 to 150 mg TOC/L diluted with tap water, higher than 92% of TOC removal was accomplished in the all ranges. In case of petrochemical wastewater, the initial TOC removal was as low as 52%, though, it increased to 86% after 32 days of operation and also the TKN removal marked 71% after 27 days. Continuous high removal rates were monitored in both the TOC and TKN parameters during the experimental period. Due to the cost for PSA (Pressure Swing Adsorption) setting and biomass supporting media installation, the initial construction cost of A/O POB process was 2.9 times higher than that of extended aeration process. However, the advantages such as low sludge production, no need for sludge recycling and low energy consumption allow the A/O POB process to have 2.5 times lower operation and maintenance costs. Consequently, in the long term of operation, it is likely that A/O POB process would show higher performance as well as cost effectiveness compared to extended aeration process.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.2
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• pp.144-151
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• 2022

In this paper, a 1.5V 256kb eFlash memory IP with low area DC-DC converter is designed for battery application. Therefore, in this paper, 5V NMOS precharging transistor is used instead of cross-coupled 5V NMOS transistor, which is a circuit that precharges the voltage of the pumping node to VIN voltage in the unit charge pump circuit for the design of a low-area DC-DC converter. A 5V cross-coupled PMOS transistor is used as a transistor that transfers the boosted voltage to the VOUT node. In addition, the gate node of the 5V NMOS precharging transistor is made to swing between VIN voltage and VIN+VDD voltage using a boost-clock generator. Furthermore, to swing the clock signal, which is one node of the pumping capacitor, to full VDD during a small ring oscillation period in the multi-stage charge pump circuit, a local inverter is added to each unit charge pump circuit. And when exiting from erase mode and program mode and staying at stand-by state, HV NMOS transistor is used to precharge to VDD voltage instead of using a circuit that precharges the boosted voltage to VDD voltage. Since the proposed circuit is applied to the DC-DC converter circuit, the layout area of the 256kb eFLASH memory IP is reduced by about 6.5% compared to the case of using the conventional DC-DC converter circuit.

• Korean Journal of Applied Biomechanics
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• v.17 no.2
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• pp.177-185
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• 2007

Even though there were no clear definitions of the short game and short game distance, short game capability is crucial for a good golf score. Generally, chip shot and pitch shot are regarded as two principal components of the short game. Chip shot is a short, low trajectory shot played to the green or from trouble back into play. Pitch shot is a high trajectory shot of short length. Biomechanical studies were conducted usually to analyze full swing and putting motions. The purpose of the study was to reveal the kinematical differences between professional golfers' 30 yard $53^{\circ}wedge$ chip shot and $56^{\circ}wedge$ pitch shot motions. Fifteen male professional golfers were recruited for the study. Kinematical data were collected by the 60 Hz three-dimensional motion analysis system. Statistical comparisons were made by paired t-test, ANOVA, and Duncan of the SPSS 12.0K with the $\alpha$ value of .05. Results show that both the left hand and the ball were placed left of the center of the left and right foot at address. The left hand position of the chip shot was significantly left side of that of the pitch shot. But the ball position of the pitch shot was significantly right side of that of the chip shot. All body segments aligned to the left of the target line, open, at address. Except shoulder, there were no significant pelvis, knee, and feet alignment differences between chip shot and pitch shot. These differences at address seem for the ball height control. Pitch shot swing motions(the shoulder and pelvis rotation and the club head travel distance) were significantly bigger than those of the chip shot. Club head velocity of the pitch shot was significantly faster than that of the chip shot at the moment of impact. This was for the same shot length control with different lofted clubs. Swing motion differences seem mainly caused by the same shot length control with different ball height control.