• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.1 s.307
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• pp.45-52
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• 2006

In this paper, authors propose a step-up converter of pulse width modulation (PWM) and power factor correction (PFC) by using a novel loss-less snubber. The proposed converter for a discontinuous conduction mode (DCM) eliminates the complicated circuit control requirement and reduces the size of components. The input current waveform in the proposed converter is got to be a sinusoidal form of discontinuous pulse in proportion to magnitude of ac input voltage under the constant duty cycle switching. Thereupon, the input power factor is nearly unity and the control method is simple. In the general DCM converters, the switching devices are fumed-on with the zero current switching (ZCS), and the switching devices must be switched-off at a maximum reactor current. To achieve a soft switching (ZCS and ZVS) of the switching turn-off, the proposed converter is constructed by using a new loss-less snubber which is operated with a partial resonant circuit. The result is that the switching loss is very low and the efficiency of converter is high. Some simulative results on computer and experimental results are included to confirm the validity of the analytical results.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.328-332
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• 2012

The work function of Ag (silver) is too low (~4.3 eV) to be used as an electrode of T-OLED (Top Emission Organic Light Emitting Diode). To solve this weakness, researches used plasma-, UV-, or thermal treatment on Ag films in order to increase the work function (~5.0 eV). So, most of studies have focused only on the work function of various treated Ag films, but studies focusing on nanomechanical properties were very important to investigate the efficiency and life time of T-OLED etc. In this paper, we focused on the mechanical properties of the Ag and $AgO_x$ film. The Ag was deposited on a glass substrate with the thickness of 150 nm by using rf-magnetron sputter with the power was fixed at 100 W and working pressure was 3 mTorr. The deposited Ag film was UV treated by UV lamp for several minutes (0~9 min). We measured the sheet resistance and mechanical property of the deposited film. From the experimental result, there were some differences of the sheet resistance and surface hardness of Ag thin film between short time (0~3 min) and long time UV treatment. These result presumed that the induced stress was taken place by the surface oxidation after UV treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.37 no.2
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• pp.111-118
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• 2024

An in-structure response spectrum (ISRS) is required to evaluate the seismic performance of a nuclear power plant (NPP). However, when a new ISRS is required because of the change in the unique spectrum of an NPP site, considerable costs such as seismic response re-analyses are incurred. This study provides several approaches to generate approximate methods for ISRS scaling, which do not require seismic response re-analyses. The ISRSs derived using these approaches are compared to the original ISRS. The effect of the ISRS of the approximate method on the seismic response and seismic performance of one of the main systems of an NPP is analyzed. The ISRS scaling approximation methods presented in this study produce ISRSs that are relatively similar at low frequencies; however, the similarity decreases at high frequencies. The effect of the ISRS scaling approximate method on the calculation accuracy of the seismic response/seismic performance of the system is determined according to the degree of similarity in the calculation of the system's essential mode responses for the method.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.3
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• pp.59-64
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• 2002

In the RFID system using ISM-band, The tag mounted at the object has used the DC power by rectifying the RF signals of the small antenna for operating the micro-controller and memory. The performance of the tag would be reduced because of the second harmonics generated by the nonlinearity of the semiconductor and the spurious signal excited the high order mode of the antenna. This paper has realized the novel type low-pass filter with "the Stub-I type DGS slot structure" to improve the efficiency of the tag by suppressing the harmonics. The optimized frequency character at the pass-band/stop-band has obtained by tuning the stub width and slit width of I type slot. The measured result of the LPF has the cutoff frequency 3.25 GHz, the insertion loss about -0.29~-0.3 dB at pass-band 2.4 GHz~2.5 GHz, the return loss about -27.688~-33.665 dB at pass-band with a good performance, and the suppression character is about -19.367 dB at second harmonics frequency 4.9 GHz. This DGS LPF may be applied the various application as the RFID, WLAN to improve the efficiency of the system by suppressing the harmonics and spurious signals. 

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.489-492
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• 2005

We report new polymer stabilized ferroelectric liquid crystal (PSFLC) cells with mechanical stability which is achievable by introducing photospacers in the cells. It was found that the mechanical st ability of the PSFLC cell was effected by introduction of photo spacers. We analyzed the dependence of mechanical stability and memory property on the density of photospacers in the PSFLC cell. The stability and memory properties of PSFLC Cells depending on photospacer density are discussed. 1. Introduction Recently, flexible displays have attracted much attention because they have remarkable advantages: thinner, lighter, non-breakable and conformable features. Flexible displays have various potential applications such as e-book and e-paper displays utilizing the distinct features. E-book and E-paper displays demand very low power consumption, so that bistable memory liquid crystal modes are required in case of flexible plastic LCDs for those application. Three kinds of memory LC modes have been developed; bistable nematic, bistable cholesteric and bistable FLC. Among them SSFLC as one of bistable FLC has big advantages such as low driving voltage, wide view angle and fast response time, SSFLC cells are, however, very weak against mechanical shock. Polymer stabilized FLC (PSFLC) has been developed to overcome the poor mechanical stability of SSFLC. PSFLC was known to have network structure that FLCs are oriented with smectic layer ordering in polymer network. The polymer network stabilizes the FLC orientation, which leads to improvement of mechanical stability of PSFLCD. A lot of studies have been done for the application of PSFLC to flexible $LCDs.^{[1{\sim}12]}$ However, it should be noted that PSFLC does not have sufficient mechanical stability for the particular applications such as smart card LCD, where LCD is highly bendable.Bead spacer was mainly used to maintain cell gap of conventional PSFLCDs. But the spacer density of it is not locally uniform in the cell, so that it is generally difficult that the PSFLCDs with bead spacers show sufficient mechanical stability. In order to more improve the mechanical stability of PSFLCDs, we introduced photospacers into PSFLCDs. In this paper, we describe the improvement of mechanical stability by introducing photospacers into PSFLCDs.

• The KIPS Transactions:PartD
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• v.11D no.4
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• pp.783-798
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• 2004

An e-business client application in ubiquitous mobile computing environment may become disconnected from the enterprise server due to broken communication connections caused by the limitation of mobile computing environments(limited battery life of the mobile device, low bandwidth communication, incomplete wireless communication infrastructure, etc). It Is even Possible that mobile client application Intentionally operates in disconnected mode to reduce communication cost and the power consumption of the mobile device. We use “data hoarding” as a means of providing local autonomy to allow transactions to be processed and committed on the mobile host despite of disconnection. The key problem to this approach is the synchronization problem that serialize potentially conflicting updates from disconnected clients on master objects of the server database. In this paper, we present a new transaction synchronizing method that splits a transaction into a set of independent component transactions and give the synchronization priority on each component taking the possibility of use and conflicts in the server into consideration. Synchronization is performed component by component based un synchronization priority. After the Preferred component of a no bile transaction succeeds in synchronization with the server, the mobile transaction can pre-commit at server. A pre-committed transaction's updated value is made visible at server before the final commit of the transaction. The synchronization of the component with low synchronization priority can be delayed in adaption to wireless bandwidth and computing resources. As a result, the availability of important data updated by mobile client is increased and it can maximize the utilization of the limited wireless bandwidth and computing resources.

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• Journal of Chest Surgery
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• v.18 no.2
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• pp.182-192
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• 1985

[here are so many reports that pulsatile blood flow provides physiologic organ perfusions during cardiopulmonary bypass. So, we compared the recent 30 cases undergoing cardiac surgery by Cobe-Stckert pulsatile roller pump with another 30 cases by Polystan nonpulsatile roller pump. Pulsatile flow was applied during aortic-cross clamping period when synchronized to internal EKG simulator, and perfusion mode was changed to continuous nonpulsatile flow after declamping of aorta. Age, sex, weight, and disease entities were comparable and operative techniques were similar between two groups. 1. There were no differences in average ACC time, ECC time, and Operation time. 2. Postoperative artificial respiration time was 6hrs 30mins in nonpulsatile group and 4hrs 48mins in pulsatile group, and detubation time after ventilator weaning was 2hrs 44mins in nonpulsatile group and 1hrs 43mins in pulsatile group. 3. Average pulse pressure was 8mmHg in nonpulsatile group and 55mmHg in pulsatile group, and a mean arterial pressure was 66.0mmHg in nonpulsatile group and 60.7mmHg in pulsatile group. 4. Mean urine-output during ACC;ECC period was 9.717.3;9.913.2ml/kg/hr in nonpulsatile group and 14.215.0;15.817.5 in pulsatile group [p<0, 05], and thereafter progressive decrease of differences in urine output between two groups until POD 2, and lesser amounts of diuretics was needed in pulsatile group during same postoperative period. Serum BUN/Cr level showed no specific difference and urine concentration power was well preserved in both groups. 5. Plasma proteins and other Enzymes showed no differences between two groups, but serum GOT/GPT level was higher in nonpulsatile group till POD 2. 6. Serum Electrolytes showed no differences between two groups. 7. WBC, RBC, Platelet counts, Hgb and Hct were not different and Coagulogram was well preserved in both groups. 8. Plasma free Hgb level was 7.09mg% in pulsatile group compared with 3.48mg% in pulsatile group on POD 1 but was normalized on POD 2. Gross hemoglobinuria after ECC was noted in 6 cases [20%] of pulsatile group and 4 cases [13%] of nonpulsatile group. 9. In both groups, most patients were included in NYHA class III to IV [28 cases;93% in nonpulsatile group, 22 cases;73% in pulsatile group] preoperatively, and well improved to class I to 11[22 cases; 73% in nonpulsatile group, 30 cases; 100% in pulsatile group] postoperatively. There were 7 operative mortalities in nonpulsatile group only, which were 5 cases of TOF with hepatic failure, 1 case of multiple VSDs with low out-put syndrome, and 1 case of mitral valvular heart disease with cardiomyopathy. We concluded that the new, commercially available Cobe-Stckert pulsatile roller pump device was safe, simple, and reliable.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.500-506
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• 1999

We designed and fabricated a bidirectional optical transceiver module for low cost access network. An integrated chip forming a pin-PD on an 1.3 urn FP-LD was assembled by flip-chip bonding on a Si optical bench, a single mode fiber with an angled end facet was aligned passively with the integrated chip on V-groove of Si-optical bench. Gaussian beam theory was applied to evaluate the coupling coefficients as a function of some parameters such as alignment distance, angle of fiber end facet, vertical alignment error. The theory is also used to search the bottle-neck between transmittance and receiving coupling efficiency in the bi-directional optical system. Tn this paper, we confirmed that reduction of coupling efficiency by the vertical alignment error between laser beam and fiber core axis can be compensated by controlling the fiber facet angle. In the fabrication of sub-module, a'||'&'||' we made such that the fiber facet have a corn shape with an angled facet only core part, the reflection of transmitted laser beam from the fiber facet could be minimized below -35 dE in alignment distance of 2: 30 /J.m. In the same condition, transmitted output power of -12.1 dEm and responsivity of 0.2. AIW were obtained.