• ETRI Journal
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• v.16 no.4
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• pp.1-11
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• 1995

A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.115-115
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• 2009

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The Power MOSFET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper, we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 40 V power MOSFET by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5\times10^{14}\;cm^{-3}$, size of $600\;{\mu}m^2$ with $4.5\;{\Omega}$, and off-state leakage current below $50\;{\mu}A$. We offer the layout of the proposed Power MOSFET to process actually. The offerd design and optimization methods are meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.222-226
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• 2016

This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF₆. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.33-37
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• 2003

A low-power $1{\times}2$ polymeric thermo-optic switch with a trench structure is proposed and fabricated. The trench structure in the optimized region slows down the heat flow from the electrodes, which contributes to the reduction of power consumption. The temperature distribution in the polymer layers has been adjusted to increase the temperature gradient between the two arms of the Y-branch. For comparison, a $1{\times}2$ polymeric thermo-optic switch with no trench structure is fabricated together on the same substrate. In the device with a trench structure, the measured crosstalk is less than -17.0 dB for TE polarization.-15.0 dB for TM polarization. The power consumption is about 66 mW, which is 25% less than that of the device with no trench structure.

• Journal of Biomedical Engineering Research
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• v.26 no.5
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• pp.309-317
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• 2005

It is expected that fully-implantable middle-ear hearing devices (FIMEHDs) will soon be available with the advantages of complete concealment, easy surgical implantation, and low power operation to resolve the problems of semi-implantable middle-ear hearing devices (SIMEHDs) such as discomfort of wearing an external device and replacement of battery. Over the last 3 years, a Korean research team at Kyungpook National University has developed an FIMEHD called ACRHS-1 based on a differential floating mass transducer (DFMT). The main research focus was functional improvement, the establishment of easy surgical procedures for implantation, miniaturization, and a low-power operation. Accordingly, this paper reviews the overall system architecture, functions, and experimental results for ACRHS-1 and its related accessories, including a wireless battery charger and remote controller.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.279-281
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• 1996

This paper deals with the two stage surge protection device by using varistor and LC low pass filter. Recently varistor alone has been used with overvoltage protection devices for the AC power mains and has same problems associated with high remnant voltage and noise. In this work, in order to improve the cutoff performance of surge protection device, the lightning surge protection device having two stage hybrid circuit for an AC single phase mains was designed and fabricated. Operation characteristics and surge clamping performance of the surge protection device in an $8/20{\mu}s$ surge current are investigated. As a consequence, it is found that the proposed two stage surge protective device for AC power mains has a variety of advantages such as a smaller clamping voltage, high frequency noise reduction and large clamping capacity.

• Journal of Korea Society of Digital Industry and Information Management
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• v.9 no.1
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• pp.53-58
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• 2013

In this paper, we proposed low power algorithm for battery residual capacity and a task. Algorithm the mobile devices power of the battery residual capacity for the task to perform power consumption to reduce the frequency alters. Task is different in power consumption according to kinds of in time accomplishment device to use. Adjustment of power consumption analyzes kinds of given tasks from having the minimum power consumption task to having the maximum power consumption task. Control frequency so that power consumption waste to be exposed to battery residual capacity can be happened according to the results analyzed. Experiment the frequency by adjusting power consumption a method to reduce using [7] and in the same environment power of the battery residual capacity consider the task to perform frequency were controlled. Efficiency was proved compare with the experiment results [7]. The experiments results show increment in the number of processing by 45.46% comparing with that [7] algorithm.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.961-963
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• 2000

Most of the application standard of the low-voltage devices have applied one the IEC standard another the UL standard. European union applied the IEC60947-1 standard has not exceed 1000V a.c. or 1500V d.c.. Therefore. it is necessary to the low-voltage device has expended for rated operational voltage with our products. The export of European market shall be made for the CE-Marking in accordance with IEC60947-1 ( Low-voltage switchgear and controlgear). We shall be considered for the requirement with the IEC standard. In this time to study for power supply system at EU ( European union. At that time for design and development in order to the construction and test method among the study for the rated insulation voltage at less then 690V.

• Journal of Advanced Marine Engineering and Technology
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• v.23 no.2
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• pp.159-167
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• 1999

This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.

• Earthquakes and Structures
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• v.24 no.6
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• pp.415-428
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• 2023

Low-cost techniques with seismic isolation performance and excellent resilience need to be explored in the case of rural low-rise buildings because of the limited buying power of rural residents. As an inexpensive and eco-friendly isolation bearing, scrap tire pads (STPs) have the issue of poor resilience. Thus, a seismic isolation system under a column (SISC) integrated with STP needs to be designed for the seismic protection of low-rise rural buildings. The SISC, which is based on a simple exterior design, maintains excellent seismic performance, while the mechanical behavior of the internal STP provides elastic resilience. The horizontal behaviors of the SISC are studied through load tests, and its mechanical properties and the intrinsic mechanism of the reset ability are discussed. Results indicate that the average residual displacement ratio was 24.59%, and the reset capability was enhanced. Comparative experimental and finite element analysis results also show that the load-displacement relationship of the SISC was essentially consistent. The dynamic characteristics of isolated and fixed-base buildings were compared by numerical assessment of the response control effects, and the SISC was found to have great seismic isolation performance. SISC can be used as a low-cost base isolation device for rural buildings in developing countries.