[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/TEEM.2016.17.4.222

Analysis of Electrical Characteristics According to Fabrication of 500 V Unified Trench Gate Power MOSFET

Kang, Ey Goo (Department of Energy Semiconductor Engineering, Far East University)

Publication Information

Transactions on Electrical and Electronic Materials / v.17, no.4, 2016 , pp. 222-226 More about this Journal

Abstract

This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF₆. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

Keywords

Power device; Breakdown voltage; Deep trench; Unified technology; Low on- resistance;

Citations & Related Records

Reference

1	G. Majumdar and T. Minato, Power Conversion Conference Proceedings, 355-359 (2007).
2	B. J. Baliga, PWS Publishing Company, 1996
3	B. Q. Tang, Y. M. Gao, and J. S. Luo, Solid-Stage Electronics, 41, 1821 (1997). [DOI: http://dx.doi.org/10.1016/S0038-1101(97)00151-2] DOI
4	S. M. Sze and G. Gibbons, Solid-State Electronics, 9, 831 (1966). [DOI: http://dx.doi.org/10.1016/0038-1101(66)90033-5] DOI
5	S. M. Sze and K. K. Ng (John Wiley & Sons, Inc., Hoboken, USA, 2007)
6	A. G. Chynoweth, Physical Review, 109, 1537 (1958). [DOI: http://dx.doi.org/10.1103/PhysRev.109.1537] DOI
7	D. C. Sheridan, G. Niu, J. N. Merrett, J. D. Cressler, C. Ellis, and C. C. Tin, Solid-State Electronics, 44, 1367 (2000). [DOI: http://dx.doi.org/10.1016/S0038-1101(00)00081-2] DOI
8	G. Charitat, CNRS, M. A. Bouanane, and P. Rossel, Power Semiconductor Devices and ICs, 1992, ISPSD '92. Proc. of the 4th International Symposium on IEEE, 213 (1992).