• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• 한국음향학회지
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• 제15권6호
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• pp.52-58
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• 1996

음파와 진동에너지를 활용하는 음파기술의 응용 연구분야로 음향공진 및 맥진동 현상을 이용하여 기액상에서 산소절달효율을 극대화 할 수 있는 폐수처리용 음향공진 산기관의 개념을 제안하였으며 원리와 성능시험을 수행하였다. 또한 저압용 헬름흘쯔 공진기, 실린더형 및 고리형 반사공진기 그리고 복합 공진시스템의 설계개념과 원리를 구현하였다. 물질전달 과정을 촉진하는 음향공진 에너지는 산소전달효율을 높여주며, 노즐에서 분출하는 공기 제트의 불평형에 의해 발생하는 주기적인 맥진동 현상은 미세한 공기방울을 만들어 내는데, 이 두가지 원리가 가장 잘 적용되는 고리형 반사공진기(AJR)의 성능이 가장 우수한 것으로 평가되었으며 기존의 산기관 보다도 $20{\sim}30%$ 정도 높은 효율을 실험으로 확인하였다.

• 대한기계학회논문집B
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• 제36권7호
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• pp.675-681
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• 2012

본 연구는 낮은 회 성분의 함량과 높은 발열량의 특성을 지닌 초청정 석탄의 촤 반응율 특성을 알아보았다. 실험은 DTF(Drop Tube Furnace)를 통해서 다양한 온도조건 하에 산소의 분율을 바꾸어가며 수행하였다. 촤 반응률을 도출하기 위하여 FT-IR을 통해 배기가스(CO, $CO_2$)를 측정하였으며, 이색온도계를 통하여서 입자 온도를 측정하였다. 또한, Arrhenius 경험식을 토대로 초청정 석탄 촤의 활성화 에너지와 빈도인자를 도출하였다. 결과는 초청정 석탄 촤의 반응특성은 온도와 산소 분율이 높아질수록 뚜렷한 증가를 보였고, 초청정 석탄 촤의 활성화 에너지는 역청탄의 수치와 비슷한 값을 보임을 알 수 있었다.

• Applied Science and Convergence Technology
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• 제25권1호
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• pp.19-24
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• 2016

In this study, we evaluated the change of electronic structure during redox process in cerium-doped $ZrO_2$ grown by sol gel method. By sol-gel method, we could obtain cerium-doped $ZrO_2$ in high oxygen partial pressure and low temperature. After post annealing process in nitrogen ambient, the film is deoxidized. We used spectroscopic and theoretical methods to analysis change of electronic structure. X-ray absorption spectroscopy (XAS) for O K1-edge and Density Functional Theory (DFT) calculation using VASP code were performed to verify the electronic structure of the film. Also, high resolution x-ray photoelectron spectroscopy (HRXPS) for Ce 3d was carried out to confirm chemical bond of cerium doped $ZrO_2$. Through the investigation of the electronic structure, we verified as followings. (1) During reduction process, binding energy of oxygen is increase. Simultaneously, oxidation state of cerium was change to 4+ to 3+. (2) Cerium 4+ and cerium 3+ states were generated at different energy level. (3) Absorption states in O K edge were mainly originated by Ce 4+ $f_0$ and Ce 3+, while occupied states in valance band were mainly originated from Ce 4+ $f_2$.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.349-358
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• 2000

Fabrication and Characterization of Bi$_{2}$/Sr$_{2}$/CaCu$_{2}$/O$_{8}$(Bi2212) superconductor thick films were fabricated successfully on C tapes by liquid reaction between Cu-free precursors of Bi$_{x}$/SrCaO/$_{y}$(x=1.2-2) and Cu tapes. Cu-free Bi-Sr-Ca-O powder mixtures were screen-printed on Cu tapes and heat-treated at 850-87$0^{\circ}C$ for several minutes in air oxygen nitrogen and low oxygen pressure. In order to obtain the optimum heat-treatment condition we studied the effect of the precursor composition the printing thickness and the heat-treatment atmosphere on the superconducting properties of Bi2212 films and the reaction mechanism. Microstructures and phases of thick films were analyzed by films and the reaction mechanism. Microstructures and phases of thick films were analyzed by optical microscope and XRD. The electric properties of superonducting films were examined by the four probe method. At heat-treatment temperature the thick films were in a partially molten state by liquid reaction between CuO of the oxidized copper tape and the precursors which were printed on Cu tapes. During the heat-treatment procedure Bi2212 superconducting particle nucleate and grow in preferred orientations.ons.s.

• 한국신뢰성학회지:신뢰성응용연구
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• 제15권3호
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• pp.197-206
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• 2015

Failure analysis of pre-insulated pipe (SPPS 380, 400A) transporting high temperature water ($95{\sim}110^{\circ}C$) for a plant was carried out. The damaged area (${\Phi}5mm$) of pre-insulated pipe was found only on welds. The chemical composition of damaged pipe meets specification of carbon steel pipes for pressure service (KS D 3562). As results of microstructure analysis, crack propagated from outer to inside after pitting corrosion occurred on the outside surface. The non-metallic inclusion existed on the end of crack. And the non-metallic inclusion continuously and linearly formed along with the bond line of welds. Based on SEM-EDS analysis, the nonmetallic inclusions have higher Manganese (Mn) and Oxygen (O) content but sulfur (S) was not detected. As results of water quality analysis, hydrogen ion concentration and minerals like Fe, Mg, Si were in low level. But the content of dissolved oxygen (11.2 ppm) was slightly higher than that of standard. It seems that the cause of damaged pipe is grooving corrosion due to MnO inclusion formed on bond line and corrosion took place nearby welds.

• 폴리머
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• 제39권2호
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• pp.225-234
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• 2015

In this study, we proposed to synthesize thermally stable, soluble and conjugated Schiff base polymer (SbP). For this reason, a specific molecule namely 4,4'-thiodiphenol which has sulfur and oxygen bridge in its structure was used to synthesize bi-functional monomers. Bi-functional amino and carbonyl monomers namely 4,4'-[thio-bis(4,1-phenyleneoxy)] dianiline (DIA) and 4,4'-[thiobis(4,1-phenyleneoxy)]dibenzaldehyde (DIB) were prepared from the elimination reaction of 4,4'-thiodiphenol with 4-iodonitrobenzene and 4-iodobenzaldehyde, respectively. The structures of products were confirmed by elemental analysis, FTIR, $^1H$ NMR and $^{13}C$ NMR techniques. The molecular weight distribution parameters of SbP were determined by size exclusion chromatography (SEC). The synthesized SbP was characterized by solubility tests, TG-DTA and DSC. Also, conductivity values of SbP and SbP-iodine complex were determined from their solid conductivity measurements. The conductivity measurements of doped and undoped SbP were carried out by Keithley 2400 electrometer at room temperature and atmospheric pressure, which were calculated via four-point probe technique. When iodine was used as a doping agent, the conductivity of SbP was observed to be increased. Optical band gap ($E_g$) of SbP was also calculated by using UV-Vis spectroscopy. It should be stressed that SbP was a semiconductor which had a potential in electronic and optoelectronic applications, with fairly low band gap. SbP was found to be thermally stable up to $300^{\circ}C$. The char of SbP was observed 29.86% at $1000^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• 제33권7호
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• pp.2207-2212
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• 2012

Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

• Transactions on Electrical and Electronic Materials
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• 제3권3호
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• pp.21-24
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• 2002

Two kinds of $Nd_{1+X}Ba_{2-X}Cu_3O_{7-{\delta}}$, the sintering samples and zone melting samples, were heat-treated under pure Ar at 950$^{circ}C$. The substitution of Nd ion for Ba ion in the $Nd_{1+X}Ba_{2-X}Cu_3O_{7-{\delta}}$ before and after the heat treatment was investigated by XRD. In order to confirm the effects of the heat treatment, the Tc and Jc of samples with/without the heat treatment under Ar were comparatively studied. $Nd_{1+X}Ba_{2-X}Cu_3O_{7-{\delta}}$ samples were oxygenated under pure oxygen at $300^{circ}C$. From the XRD pattern it was found that the sample with x<0.4 was transferred from tetragonal phase to orthorhombic phase after the oxygenation, while the sample with x>0.4 did not show the phase transition even after a long time oxygenation. Therefore, the low oxygen partial pressure (Ar+1 % O$_2$) was used for the ambient atmosphere of the zone-melting samples, which could reduce the melting temperature and depress the substitution of Nd for Ba. After the improvement in the zone-melting process, the Jc value was increased to 2 x $10^4$A/$cm^2$ (0 T, 78 K). The particle orientation and the structure of zone-melted NdBaCuO were studied by the XRD and SEM analysis.