• 유체기계공업학회:학술대회논문집
• /
• 2006.08a
• /
• pp.287-290
• /
• 2006

Orbiter mechanism has been applied to vacuum pump design for small oxygen generator where low vacuum of about 200mmHg is required. Performance of the designed vacuum pump has been numerically investigated: calculated volumetric and adiabatic efficiencies were 69.7% and 83.9%, respectively for leakage clearance of $10{\mu}m$. Total efficiency of the orbiter vacuum pump was 77.5%. At the shaft speed of 1700 rpm suction displacement volume of 6.3cc provided discharge flow at the rate of 2.3 liter/min with power consumption of 10.1Watt. Torque variation of the orbiter pump was only about 20% of that of diaphragm pump.

• Proceedings of the IEEK Conference
• /
• 2003.07b
• /
• pp.667-670
• /
• 2003

Ni-silicide has low thermal stabiliy. This point is obstacle to apply NiSi to devices. So In this paper, we have studied for obtain thermal stability and analysis of dopant dependency of NiSi. And then we applied Ni-silicide to devices. To improvement of thermal stability, we deposit Ni70/Co10/Ni30/TiN100 to sample. Co midlayer is enhanced thermal stability of NiSi. Co/Ni/TiN, this structure show very difference between n-poly and p-poly in sheet resistance. But Ni/Co/Ni/TiN, structure show less difference. Also junction leakage is good.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.3
• /
• pp.164-169
• /
• 2002

This paper mainly discusses the hard breakdown of 2.2-nm-thick $SiO_2$ films. It is shown that the hard breakdown event of a 2.2-nm-thick $SiO_2$ film greatly depends on the applied electric field. It is strongly suggested that the local weak spots created by applying a low initial stress to a 2.2-nm-thick $SiO_2$film resist the onset of hard breakdown. In other words, it is anticipated that the stored electrostatic energy is fast dissipated by trap-assisted tunneling in 2.2-nm-thick $SiO_2$ film. Consequently, it is strongly suggested that 2.2-nm-thick $SiO_2$ films are intrinsically quite robust.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.6
• /
• pp.546-550
• /
• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• Journal of IKEEE
• /
• v.24 no.2
• /
• pp.586-591
• /
• 2020

An interleaved current-fed high step-up DC-DC converter is proposed. Besides high voltage gain, a low ripple input current is achieved by adopting interleaving operation. Moreover, soft-switching characteristic of the proposed converter reduces switching losses of active power switches and raise the conversion efficiency. The reverse-recovery problem of output rectifiers is also alleviated by controlling the current changing rates of diodes by utilizing the leakage inductances of transformers. Experimental results obtained on a 200W prototype are discussed.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2000.04a
• /
• pp.87-96
• /
• 2000

The properties of polyimide for interlayer dielectric applications are investigated during plasma etching of aluminum on it. Chlorine-based plasma generally used for aluminum etching results in an increase in the (dielectric constant of polyimide, while $SF_6$ plasma exhibits a high polyimide etch rate and a reducing effect of the dielectric constant. The leakage current of polyimide is significantly suppressed after plasma exposure. An optimal combination of Al etch with $Cl_6$ plasma and polyimide etch with $SF_6$ plasma is expected to be a good tool for realizing multilevel metallization structures.

• Proceedings of the IEEK Conference
• /
• 2002.06e
• /
• pp.257-260
• /
• 2002

In this paper, the circuit of AC Choppers for $CO_2$laser Power Supply are proposed and investigated. IGBT-controlled ac voltage regulators, operating at high frequency chopping mode. Chopping-to-supply duty ratio plays an important role in terms of laser output. Laser input energy is varied by controlling the leakage transfomer used with the proposed system. This improved circuit employs a 3 electrode-type and Ring Blower. This improved circuit system has many advantages compared with the conventional SMPS such as simple design requirment, easy implementation, high reliability, low switching loss, and consequently high efficiency. As a result, the maximun output was 16W at duty-ratio of 92%, total gas mixture of $CO_2$: $N_2$: He = 1 : 9 : 15, total pressure of 15torr.

• IEIE Transactions on Smart Processing and Computing
• /
• v.3 no.6
• /
• pp.410-415
• /
• 2014

This paper presents a new rectifier with a bootstrapping technique to reduce the effective drop voltage. An all-digital delay locked loop (ADDLL) circuit was also applied to prevent the reverse leakage current. The proposed rectifier uses NMOS diode connected instead of PMOS to reduce the design size and improve the frequency respond. All the sub-circuits of ADDLL were designed with low power consumption to reduce the total power of the rectifier. The rectifier was implemented in CMOS $0.35{\mu}m$ technology. The peak power conversion efficiency was 76 % at an input frequency of 6.78MHz and a power level of 5W.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2001.11a
• /
• pp.222-226
• /
• 2001

In this paper, 2.4GHz RF Module using Even Harmonic Mixer(EHM) was designed and fabricated for Direct conversion(DC) system. By minimizing performance degradation of DC system with DC offset and LO radiation, the capability of minimization and one chip solution in wireless system was proposed. The designed EHM using anti-parallel diode pair represented 9dB conversion loss and about -60dBm 2LO leakage radiation in RF port, and output reflection and reverse transmission characteristic of low noise amplifier was improved. So superior DC offset suppression characteristic is expected. RF Module which consists of EHM, LNA, RF amplifier, Frequency synthesizer and Duplexer was designed and fabricated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.5
• /
• pp.415-420
• /
• 2007

Generally, a diode package consists of the synthetic resin that has good durability but low thermal conductivity. The surface mounted type fast recovery diode was fabricated by using ceramic package. Its main manufacture processes are composed of soldering, sillicon coating and side termination. And it has various advantages that diode is small, easy manufacture and fast cooling. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5.28 ns, 1322 V, 1.08 V, $0.45\;{\mu}A$, respectively.