• Journal of the Korea institute for structural maintenance and inspection
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• v.25 no.1
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• pp.112-119
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• 2021

The failure mode of piping systems due to seismic loads is the low-cycle fatigue failure with ratcheting, and it was found that the element in which nonlinear behavior is concentrated and damage occurs is the elbow. In this study, to quantitatively express the failure criteria for a pipe elbow of SCH40 3-inch carbon steel under low-cycle fatigue, the limit state was defined as leakage, and the in-plane cyclic loading test was conducted. For the carbon steel pipe elbow, which is the vulnerable part to seismic load of piping systems, the damage index was represented using the moment-deformation angle relationship, and it was compared and analyzed with the damage index calculated using the force-displacement relationship. An attempt was made to quantitatively express the limit state of the carbon steel pipe elbow involving leakage using the damage index, which was based on the dissipated energy caused by repeated external forces.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.48.1-48.1
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• 2009

Performance of organic field-effect transistors (OFETs) with various temperature-cured polyacrylate(PA) copolymer as a gate insulator was studied. The PA thin film, which was cured at an optimized temperature, showed high dielectric strength (>7 MV/cm), low leakage current density ($5{\times}10^{-9}\;A/cm^2$ at 1 MV/cm) and enabled negligible hysteresis in MIS capacitor and OFET. A field-effect mobility of ${\sim}0.6\;cm^2/V\;s$, on/off current ratio (Ion/Ioff) of ${\sim}10^5$ and inverse subthreshold slope (SS) as low as 1.22 V/decwere achieved. The high dielectric strength made it possible to scale down the thickness of dielectric, and low-voltage operation of -5 V was successfully realized. The chemical changes were monitored by FT-IR. The morphology and microstructure of the pentacene layer grown on PA dielectrics were also investigated and correlated with OFET device performance.

• IEMEK Journal of Embedded Systems and Applications
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• v.2 no.2
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• pp.82-94
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• 2007

Wireless sensor networking technology is one of the basic infrastructures for ubiquitous environment. It enables us to gather various sensory data such as temperature, humidity, gas leakage, and speed from the remote sensor devices. To support these networking functions, IEEE WPAN working group makes standards for PHY and MAC, while ZigBee Alliance defines the standards for the network, security, and applications. The low-rate WPAN was emerged to have the characteristics of network resilience, low cost, and low power consumption. It has a broad range of applications including, but not limit to industrial control and monitoring, home automation, disaster forecast and monitoring, health care. In order to provide more intelligent and robust services, users want voice-based solutions to accommodate to low-rate WPAN. In this paper, we have evaluated voice quality of an IEEE 802.15.4 standard compliant voice node. Specifically, it includes the design of a voice node and experiments based on the prediction of voice quality using the E-model suggested by ITU-T G.107, and the network communication mechanisms considering beacon-enabled and nonbeacon-enabled networks for real-time voice communications.

• The KSFM Journal of Fluid Machinery
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• v.17 no.2
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• pp.48-53
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• 2014

A low-noise regenerative blower is developed for fuel cell application by combining the FANDAS-Regen code and design optimization algorithm under several performance constraints for flow capacity, static pressure, efficiency and power consumption. The optimized blower design model is manufactured with some impeller modification based on low noise design concept and tested by using aerodynamic performance chamber facility and narrow-band noise measurement apparatus. The measured results of the optimized blower satisfy the performance requirements and are also compared favorably with the FANDAS-Regen prediction results within a few percent relative error. Furthermore, the present study shows the remarkable noise reduction by 26 dBA can be achieved through design optimization and low noise design concept.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2326-2328
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• 1999

Developments of effective and economic diagnostic apparatus for industrial plastic insulated high voltage power cables are in discontented condition still. Some report told that DC high voltage was damaged plastic insulation of a partially aged power cable to lead breakdown easily. But now, we have no alternative tools of DC diagnostic apparatus, and we try to reduce a possibility of hazard DC diagnosis. DC diagnostic apparatus still have many advantages to field cable engineer like low price, portability easy applications and sufficient data. Main hazard of DC diagnosis is excessive hight of applied voltage Recent developments for DC diagnosis use considerably low voltage. But new test methods need special measuring device and manipulator, like high input impedance voltmeter, low leakage current high voltage switches, etc. So that reason, new DC diagnostic devices are normally very expensive and have low efficiency, economically. We try to design a composite test device for 3$\sim$4 newly developed method, have economical benefit th industrial engineer.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1463-1465
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• 1994

The electrical characteristics of $Al/Ta_2O_5/Si$ metal-oxide-semiconductor (MOS) capacitors were studied. $Ta_2O_5$ films on p-type silicon had been prepared by ionized cluster beam epitaxy technique (ICBE). This $Ta_2O_5$ films have low leakage current, high breakdown strength and low flat band shift. In this research, a single crystalline cpitaxial film of $Ta_2O_5$ has been grown on p-Si wafer using an ICBE technique. The native oxide layer ($SiO_2$) on the silicon substrate was removed below $500^{\circ}C$ by use of an accelerated arsenic ion beam, instead of a high temperature deposition. $Ta_2O_5$ films formed by ICBE technique can be received considerable attention for applications to coupling capacitors, gate dielectrics in MOS devices, and memory storage capacitor insulator because of their high dielectric constants above 20 and low temperature process.

• The KSFM Journal of Fluid Machinery
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• v.9 no.1 s.34
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• pp.9-18
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• 2006

In the range of very low specific speed ($n_s<0.25$, non-dimensional), the performance of a centrifugal pump is much different from that of a centrifugal pump of normal ns and the efficiency of the pump drops rapidly with the decrease of $n_s$. In order to examine the reason of unstable performance characteristics of the very low $n_s$- centrifugal pump, the internal flow of the pump with a semi-open impeller is measured by a PTV(Particle Tracking Velocimetry) system. The purpose of this study is to make clear the internal flow characteristics and to obtain basic knowledge of the pump performance. The results show that the leakage flow through tip clearance give a strong effect on the flow pattern of impeller passage. A large vortex in the impeller passage and a strong reverse flow at impeller outlet are formed in the range of small flow rates, and the vortex and the reverse flow together reduce the absolute tangential velocity at the impeller outlet and cause the performance instability.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.193-194
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• 2018

Common transistor has unipolar characteristics in accordance with the doping carriers and operation by the threshold voltage, which is related to the stability. It is required the low threshold voltage of transistors to increase the stability of devices. The sensing ability is about the detection of how low current, therefore there is difference between the low current and leakage current. This study researched the ambipolar characteristics of transistors with very low currents to define the difference between common n-type transistors with unipolar properties.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1646-1648
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• 2000

This paper investigated structural and electrical properties of $Y_{2}O_3$ as a buffer layer of sin91r transistor FRAM (ferroelectric RAM). $Y_{2}O_3$ buffer layers were deposited at a low substrate temperature below 400$^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post- annealing temperature, and suppression of interfacial $SiO_2$ layer generation. for a well-fabricated sample, we achieved that leakage current density ($J_{leak}$) in the order of $10^{-7}A/cm2$, breakdown electric field ($E_{br}$) about 2 MV/cm for $Y_{2}O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_{2}O_3$/Si as low as $8.72{\times}10^{10}cm^{-2}eV^{-1}$. The low interface states were obtained from very low lattice mismatch less than 1.75%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.47-50
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• 2000

This paper investigated structural and electrical properties of $Y_2$ $O_3$ as a buffer layer of single transistor FRAM (ferroelectric RAM). $Y_2$ $O_3$ buffer layers were deposited at a low substrate temperature below 40$0^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post-annealing temperature, and suppression of interfacial $SiO_2$ layer generation. For a well-fabricated sample, we achieved that leakage current density ( $J_{leak}$) in the order of 10$^{-7}$ A/$\textrm{cm}^2$, breakdown electric field ( $E_{br}$ ) about 2 MV/cm for $Y_2$ $O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_2$ $O_3$/Si as low as 8.72x1010 c $m^{-2}$ e $V^{-1}$ . The low interface states were obtained from very low lattice mismatch less than 1.75%.