• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.127-134
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• 2001

With the increasing demands for hand-held devices with lightweight and low-power-consumption displays, the role of reflective liquid crystal displays (LCDs) is becoming more and more important. Especially, the single polarizer mode is considered as a suitable structure for reflective LCDs because it can provide high brightness. However, the single-polarizer LCDs have demerit in that the contrast is lower than double-polarizer LCDs because of the light leakage in thedark state. (omitted)

• Fire Science and Engineering
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• v.2 no.1
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• pp.21-28
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• 1988

This paper deals with the optimal use of the ELB (Electric Leakage circuit Breaks) for the protection of low voltage distribution system. Since the ELB is recently used together for grounding fault while only the ground resistance was used in the past, the analysis of ELB characteristics is indispensible. By the quantitative analysis and the setting of limit the ground resistance and the ELB is derived and then the optimal use of the ELB is expected to contribute to the system protection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.161-161
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• 2009

Ion bombarded inorganic materials for LC alignment has been researched as it provides controllability in a nonstop process for producing high-resolution displays. Many optically transparent insulators such as $SiOx$ and a-C:H have been investigated as potential candidates for inorganic alignment materials. Even so, LC orientation on a new material with superior capacity is required to produce high-performance displays. Many inorganic materials with high permittivities can reduce the voltage losses due to the LC alignment layer that are a trade-off for its capacitance. The minimum voltage for device operation can be applied to the LC under low external voltage using these materials. This means that low power consumption for LCD applications can be achieved using a high-k alignment structure in which the LC can be driven effectively with a low threshold voltage. Among the many other potential high-k oxides, HfO2 is considered to be one of the most promising due to its remarkable properties of high dielectric constant, relatively low leakage current, large band gap (5.68 eV), and high transparency. Due to these characteristics, HfO2 can be used in LC alignment to increase the capacitance of the inorganic alignment layer for low-voltage driving of LCs.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.72-78
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• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.7 s.238
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• pp.784-794
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• 2005

In the very low specific speed range ($n_s=0.24$ < 0.25, non-dimensional), the efficiency of centrifugal pump designed by a conventional method is very low in common. Therefore, positive-displacement pumps have long been used widely. Recently, since the centrifugal pumps are becoming higher in rotational speed and smaller in size, there expects to develop a new centrifugal pump with a high performance to replace the positive-displacement pumps. The purpose of this study is to investigate the internal flow characteristics of a very low specific speed centrifugal pump and to examine the effect of internal flow pattern on pump performance. The results show that the theoretical head definition of semi-open impeller should be revised by the consideration of high slip factor in the semi-open impeller, and the leakage flow through the tip clearance results in a large effect on the impeller internal flow. Strong reverse flow at the outlet of semi-open impeller reduces the absolute tangential velocity considerably, and the decreased absolute tangential velocity increasese the slip factor with the reduction of theoretical head.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.20 no.1
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• pp.127-131
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• 2022

The structural safety of prototype transport and storage containers for very low-level radioactive liquid waste was experimentally estimated for its localization development. Transport containers for radioactive liquid waste have been researched and developed, however, there are no standardized commercial containers for very low-level radioactive waste in Korea. In this study, the structural safety of the designated IP-2 type container capable of transporting and temporarily storing large amounts of very low-level liquid waste, which is generated during the operation and decommissioning of nuclear power plants, was demonstrated. The stacking and drop tests, which were conducted to determine the structural integrity of the container, verified that there was no external leakage of the contents in spite of its structural deformation due to the drop impact. This study shows the effort required for the localization of the technology used in manufacturing transport and storage containers for very low-level radioactive liquid waste, and the additional structural reinforcement of the container in which the commercial intermediate bulk container (IBC) external frame was coupled.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.23-25
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• 2001

In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.2
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• pp.220-228
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• 2012

In this paper, we explained the design technique about Ka-band active limiter for protecting the receiver of a millimeter wave seeker. To implement low flat leakage power, we proposed the control circuit of active limiter to control limiter voltage with PRF(Pulse Repetition Frequency) signal and input power. This active limiter consisted of the conventional 2 stage passive limiter, a feedback circuit with a directional coupler, detector, non-inverting amplifier and over-current protection resistance. As the test result of the fabricated Ka-band limiter, it had 1 GHz bandwidth, 3.5 dB insertion loss at the small input power and -7.5 dBm flat leakage at the 4 W RF input power, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.11
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• pp.17-23
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• 2004

The implementation and design of the wideband IFIU using aperture open loop resonator and reversed phase technique to reduce the local oscillator leakage signal was represented in this paper. The local oscillator leakage signal is generated in stage of frequency conversion, especially in frequency conversion of fully digital modulation signal close to DC signal. The leakage signal and spurious signals, which have effects on adjacent channel or in-band channel as interference signals, were reduced below -60 dBc for 45 Mbps and 155 Mbps IF interface units. The group delay for both IFIUs shows low ripple characteristics of 15 ns and 8 ns, respectively. Also, the amplitude ripple characteristic in 150 MHz bandwidth with L-band center frequency satisfies the required specification of 2 dB. The implemented IFIU provides the required specifications for wideband satellite communication system.