• Nuclear Engineering and Technology
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• 제55권2호
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• pp.640-647
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• 2023

Material corrosion in nuclear power plant (NPP) is not controlled only by amine injection but also by ion exchange (IX) which is the best option to remove trace Na⁺. This study was conducted to understand the Na⁺ leakage characteristics of IX beds packed with ethanolamine-form (ETAH-form) and hydrogen-form (H-form) resins in the simulated water-steam cycle in terms of intrinsic behaviors of four kinds of cation-exchange resins through ASTM test and Vanselow mass action modeling. Na⁺ was inappreciably escaped throughout the channel created in resin layer. Na⁺ leakage from IX bed was non-linearly raised because of its decreasing selectivity with increasing Na⁺ capture and with increasing the fraction of ETAH-form resin. Na⁺ did not reach the breakthrough earlier than ETAH⁺ and NH₄⁺ due to the increased selectivity of Na⁺ to the cation-exchange resin (H⁺ < ETAH⁺ < NH₄⁺ ≪ Na⁺) at the feed composition. Na⁺ leakage from the resin bed filled with small particles was decreased due to the enhanced dynamic IX processes, regardless of its low selectivity. Thus, the particle size is a predominant factor among intrinsic properties of IX resin to reduce Na⁺ leakage from the condensate polishing plant (CPP) in NPPs.

• Restorative Dentistry and Endodontics
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• 제27권1호
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• pp.24-33
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• 2002

Leakage studies have been performed frequently, since a fluid-tight seal provided by various dental fill-ing materials has been considered clinically important. The leakage of the various root-end filling materials has been widely investigated mostly dye penetration method. These dye studies cannot offer any information about the quality of the seal of a test material over a long period of time The purpose of this study was to evaluate the microleakage of root end cavities in blood contamination filed amalgam, intermediate restorative material(IRM), light cured glass ionomer cement(GI) and mineral trioxide aggregate(MTA) by means of a modified fluid transport model. Fifty standard human root sections, each 5mm high and with a central pulp lumen of 3mm in diameter, were and filled with our commonly used or potential root end fill ing materials after they were contaminated with blood. At 24h. 72h, 1, 2, 4, 8, and 12 weeks after filling, leakage along these filling materials was determined under a low pressure of 10KPa(0.1atm) using a fluid transport model. The results were as follows : 1 MTA group showed a tendency of decreasing percent of gross leakage (20m1/day) in process of time, whereas the other materials showed a tendency of increasing in the process time. 2. At the all time interval, GI group leaked significantly less than amalgam group and IRM group (p＜0.05). 3. At the 4 weeks, the percentage of gross leakage in MTA group decreased to 0% thereafter, the low per-centage of gross leakage was maintained in MTA group until the end of the experiment, whereas the percentage in IRM group increased to 100% 4. At the 12 weeks, percentage of gross leakage was significantly low in MTA group(0%), comparison with GI group(40%), amalgam group(90%) and IRM group(100%), but there was no significant difference between latter two materials.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.481-485
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• 2002

본 연구에서는 수직형 LPE 장치를 이용하여 meltback 방법으로 제작된 PBH-LD에 대한 누설전류를 해석하였다. PBH-LD에서 활성층 이외의 p-n 다이오드와 p-n-p-n 전류차단층과 같은 누설경로에 따른 이들의 영향을 조사하였다. 이러한 누설전류의 영향을 알아보기 위해 누설 폭이 "0" 일 때와 누설 폭이 $W_{ι}$ 일 때를 비교하였다. 그 결과 누설 폭에 따른 임계전류는 누설 폭을 줄이거나, 고유저항 ($\rho$$_{ι}$$\rho$$_{a}$ )비를 증가시켜줌으로써 임계전류가 낮아짐을 확인하였다. 본 연구에서 제작된 LD의 경우 활성층의 폭 $W_{a}$ 가 약 1.4$\mu\textrm{m}$이고 누설 폭이 약 0.6$\mu\textrm{m}$로, 제작된 LD의 cavity length와 임계전류를 비교해 본 결과 고유저항비가 약 0.5일 때 누설 폭에 따른 계산된 임계전류값과 실제 제작된 PBH-LD의 임계전류값이 일치함을 확인하였다. 따라서, 제작된 PBH-LD의 p-InP 차단층의 도핑농도를 $10^{18}$ c $m_{-3}$ 에서 $10^{17}$ $cm^{-3}$으로 줄여 누설영역의 저항을 크게 함으로써 누설전류를 더 줄일 수 있으리라 생각된다.다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권4호
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• pp.263-268
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• 2004

In this paper, we motivate the post-mask performance enhancement technique combined with the Multi-Threshold Voltage CMOS (MTCMOS) leakage current suppression technology, and integrate the new design issues related to the MTCMOS technology into the ASIC design methodology. The issues include short-circuit current and sneak leakage current prevention. Towards validating the proposed techniques, a Personal Digital Assistant (PDA) processor has been implemented using the methodology, and a 0.18um process. The fabricated PDA processor operates at 333MHz which has been improved about 23% at no additional cost of redesign and masks, and consumes about 2uW of standby mode leakage power which could have been three orders of magnitude larger if the MTCMOS technology was not applied.

• 전자공학회논문지A
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• 제32A권2호
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• pp.324-331
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• 1995

The leakage current characteristics of the low temperature processed LDD structure poly-Si TFT is analyzed. The excimer laser technology was applied to the recrystallization process of poly-Si film and the maximum processing temperature was retained under 600.deg.C. From the fabricated LDD space 0.3.mu.m to 3$\mu$m, the best on/off current ration could be obtained with the 1.3$\mu$m LDD space. And the threshold voltage did not increase more than 4V over 0.8$\mu$m LDD space. The characteristics of leakage current was compared to non-LDD structure TFT to analyze the mechanism of leakage current. Consequently, it could be concluded that the leakage current is strongly affected by the trap states as well as high electric field between gate and drain.

• 대한기계학회논문집B
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• 제27권8호
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• pp.1015-1022
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• 2003

Flows in a regenerative pump were calculated for several flow-rates, using the CFX-Tascflow. The calculated results show the vortex structure in the impeller and side channel. The predicted performance shows considerable discrepancy from the measured values for low flow rates. Main source of the difference is the leakage flow of pump strongly affecting the performance of pump. A simple correlation was proposed using calculated leakage flows through the simplified passage. One dimensional analysis were made for the recirculating flow and angular momentum transfer using calculated three dimensional data base.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.102-105
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• 2003

The leakage inductance of the High frequency Transformer(HFT) in the flyback topology can be used an inductor of the Low Pass Filter(LPF) to reduce ripple and ripple noise in the output voltage. But, the values of leakage inductance and magnetizing inductance in the HFT are within $\pm20[{\%}]$). And the operating temperature of the HFT increased by the leakage inductance. Therefore, the leakage inductance of the HFT in the flyback topology has minimum and the LPF has non-polarity ceramic capacitor in the output stage. In this paper, the LPF in the flyback topoBogy takes PCB capacitor using double layer of PCB without non-polarity ceramic capacitor. Its experimental results show the reduced ripple noise and the reduced ripple in the output stage.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2005년도 춘계학술대회논문집
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• pp.303-306
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• 2005

This paper presents the frequency-dependent characteristics of leakage currents flowing through ZnO surge arrester block. The leakage current-voltage (I-V) characteristic curves of the commercial ZnO surge arrester blocks were measured. The resistive leakage current was found to increase with increasing frequency in the low conduction region. The capacitance of ZnO block was independent of the magnitude and frequency of the applied voltage. The power losses of ZnO block increase as the frequency of applied voltage increases, because of the dielectric loss related to the frequency of the test voltage.

• Journal of Power Electronics
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• 제18권4호
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• pp.997-1006
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• 2018

This paper proposes a transformerless photovoltaic (PV) power converter system based on the DC/AC boost inverter, which can solve the leakage current and second-order ripple power issues in single-phase grid-connected PV inverters. In the proposed topology, the leakage current can be decreased remarkably since most of the common-mode currents flow through the output capacitor, by-passing parasitic capacitors, and grounding resistors. In addition, the inherent ripple power component in the single-phase grid inverter can be suppressed without adding any extra components. Therefore, bulky electrolytic capacitors can be replaced by small film capacitors. The effectiveness of the proposed topology has been verified by simulation and experimental results for a 1-kW PV PCS.

• 대한전기학회논문지
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• 제41권2호
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• pp.170-177
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• 1992

Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.