• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.83-87
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• 2003

Thin films of amorphous carbon (a-C) generally combine high wear resistance with low friction coefficients and a-C films have widespread applications as protective coatings and passivation of electrical circuit and insulating layer. In this work we deposited the amorphous carbon (a-C) films on silicon substrate with a high rate DC magnetron sputtering system. It is obtained parameters on the deposition rate and physical properties of a-C films using a wide range of Ar gas pressure and DC power. The physical properties of the films were analyzed by Nanoindenter and AFM (Atomic Force Microscopy), The electrical properties were investigated by electrical conductivity measurement.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.501-504
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• 2006

The Process technology for uniform SLS poly-Si and performance enhancement of furnace activated poly-Si TFTs are reported. By strictly optimizing SLS optics, threshold voltage variation in pixel TFTs was remarkably decreased and the non-uniformity such as SLS shot mark was removed. Optimized doping process for low sheet resistance and passivation annealing are critical for the enhancement of device performances.

• Korean Journal of Materials Research
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• v.23 no.5
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• pp.260-265
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• 2013

Silicon nanoparticle is a promising material for electronic devices, photovoltaics, and biological applications. Here, we synthesize silicon nanoparticles via $CO_2$ laser pyrolysis and study the hydrogen flow effects on the characteristics of silicon nanoparticles using high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and UV-Vis-NIR spectrophotometry. In $CO_2$ laser pyrolysis, used to synthesize the silicon nanoparticles, the wavelength of the $CO_2$ laser matches the absorption cross section of silane. Silane absorbs the $CO_2$ laser energy at a wavelength of $10.6{\mu}m$. Therefore, the laser excites silane, dissociating it to Si radical. Finally, nucleation and growth of the Si radicals generates various silicon nanoparticle. In addition, researchers can introduce hydrogen gas into silane to control the characteristics of silicon nanoparticles. Changing the hydrogen flow rate affects the nanoparticle size and crystallinity of silicon nanoparticles. Specifically, a high hydrogen flow rate produces small silicon nanoparticles and induces low crystallinity. We attribute these characteristics to the low density of the Si precursor, high hydrogen passivation probability on the surface of the silicon nanoparticles, and low reaction temperature during the synthesis.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.276-276
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• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.116-120
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• 2011

In this paper, we studied the optimization of the screen pringting method for crystalline silicon solar cell fabrication. The 156 * 156 mm2 p-type silicon wafers with $200{\mu}m$ thickness and $0.5-3{\Omega}cm$ resistivity were used after texturing, doping, and passivation. Screen printing method is a common way to make the c-Si solar cell with low-cost and high-efficiency. We studied the optimized condition for screen printing with crystalline silicon solar cell as changing the printing direction (finger line or bus bar), finger width, and mesh angle. As a result, the screen printing with finger line direction showed higher finger height and better conversion efficiency, compared with one with bus bar direction. The experiments with various finger widths and mesh angles were also carried out. The characteristics of solar cells was obtained by measuring light current-voltage, optical microscope and electroluminescence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.163-163
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• 2008

반도체 소자가 고집적화 되고 고속화를 필요로 하게 됨에 따라, 기존에 사용되었던 알루미늄이나 텅스텐보다 낮은 전기저항, 높은 electro-migration resistance으로 미세한 금속배선 처리가 가능한 Cu가 주목받게 되었다. 하지만 과잉 디싱 현상과 에로젼을 유도하여 메탈라인 브리징과 단락을 초래할 있고 Cu의 단락인 islands를 남김으로서 표면 결함을 제거하는데 효과적이지 못다는 단점을 가지고 있었다. 특히 평탄화 공정시 높은 압력으로 인하여 Cu막의 하부인 ILD막의 다공성의 low-k 물질의 손상을 초래 할 수 있는 문제점을 해결하기 위하여 기존의 CMP에 전기화학을 결합시킴으로서 낮은 하력에서의 Cu 평탄화를 달성 할 수 있는 기존의 CMP 기술에 전기화학을 접목한 새로운 개념의 ECMP (electrochemical-mechanical polishing) 기술이 생겨나게 되었다. 따라서 본 논문에서는 최적화된 ECMP 공정을 위하여 I-V곡선과 CV법을 이용하여 active. passive. trans-passive 영역의 전기화학적 특징을 알아보았고. Cu막의 표면 형상을 알아보기 위해 Scanning Electron Microscopy (SEM) 측정과 Energy Dispersive Spectroscopy (EDS) 분석을 통해 금속 화학적 조성을 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.57-58
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• 2006

In MIM (metal insulator metal) capacitor, Ru (ruthenium) has been suggested as new bottom electrode due to its excellent electrical performance, a low leakage of current and compatibility to the high dielectric constant materials. In this case of Ru bottom electrode, CMP (chemical mechanical planarization) process was needed m order to planarize and isolate the bottom electrode. In this study, the effect of chemical A on polishing and etching behavior was investigated as functions of chemical A concentration, abrasive particle and pressure. Chemical A was used as oxidant and etchant. The thickness of passivation layer on the treated Ru surface increased with the increase of chemical A concentration. The etch rate and removal rate of Ru were increased by the addition of chemical A. The removal rate was highest m slurry of pH 9 with the addition of 0.1 M chemical A and 2 wt% alumina at 4 psi. The maximum removal rate is about 80 nm/min.

• Journal of the Korean Electrochemical Society
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• v.15 no.3
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• pp.135-148
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• 2012

Ionic liquids are steadily attracting interests throughout a recent decade and their application is expanding into various fields including electrochemistry due to their unique properties such as non-volatility, inflammability, low toxicity, good ionic conductivity, wide electrochemical potential window and so on. These features make ionic liquids become an alternative solution for electrodeposition of metals that cannot be electroplated in aqueous electrolytes. In this review, we classify investigated metals into three categories, which are light (Li, Mg), refractory (Ti, Ta) and noble (Pd, Pt, Au) metals, rather than covering the exhaustive list of metals and try to update the recent development in this area. In electrodeposition of light metals, granular fine Li particles were successfully obtained while the passivation of electrodeposited Mg layers is an obstacle to reversible deposition-dissolution process of Mg. In the case of refractory metals, the quality of Ta and Ti deposit particles was effectively improved with addition of LiF and pyrrole, respectively. In noble metal category, EMIM TFSA ionic liquid as an electrolyte for Au electrodeposition was proven to be effective and BMP TFSA ionic liquid developed a smooth Pd deposit. Pt nanoparticle production from ionic liquid droplet in aqueous solution can be cost-effective and display an excellent electrocatalytic activity.

• Journal of Hydrogen and New Energy
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• v.4 no.2
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• pp.29-40
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• 1993

Intensive studies on the electrochemical characteristics of TiFe type alloy electrodes have been carried out to clarify the mechanism of electrochemical hydrogen absorption and desorption. It was found that electrochemical activation of the TiFe type alloys is difficult and that charge efficiencies are very low even after a decade of activation cycles. However, by the pretreatment of the powders such as gas activation and/or Ni chemical plating, charge efficiencies fairly increased, especially for the $TiFe_{0.8}Ni_{0.2}$ alloy. It was considered that difficulties to activation and lower charge efficies of the alloys are due to the presence of the passivation films, which prohibit inward diffusion of hydrogen and promote the combination of adsorbed hydrogen atom to gas bubbles during the electrochemical charge. In addition, lower diffusivity of hydrogen in the alloys may be played an important role lowering the charge efficiencies.

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.7-11
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• 2000

a-Si:H and poly-Si TFT(thin film transistor) characteristics were investigated using an inverted staggered type TFT. The TFT an as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. The poly-Si films were achieved by using an isothermal and RTA treatment for glow discharge deposited a-Si:H films. The a-Si:H films were cystallized at the various temperature from 600$^{\circ}C$ to 1000$^{\circ}C$. As anneal temperature was elevated, the TFT exhibited increased g$\sub$m/ and reduced V$\sub$ds/. V$\sub$T/. The poly-Si grain boundary passivation with grain boundary trap types and activation energies as a function of anneal temperature. The poly-si TFT showed an improved I$\sub$nm//I$\sub$off/ ratio of 10$\^$6/, reduced gate threshold voltage, and increased field effect mobility by three orders.