Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Anneal Temperature Effects on Hydrogenated Thin Film Silicon for TFT Applications

  • Ahn, Byeong-Jae (School of Electrical and Computer Engineering, Sungkynkwan University) ;
  • Kim, Do-Young (School of Electrical and Computer Engineering, Sungkynkwan University) ;
  • Yoo, Jin-Su (School of Electrical and Computer Engineering, Sungkynkwan University) ;
  • Junsin Yi (School of Electrical and Computer Engineering, Sungkynkwan University)
  • Published : 2000.06.01
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Abstract

a-Si:H and poly-Si TFT(thin film transistor) characteristics were investigated using an inverted staggered type TFT. The TFT an as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. The poly-Si films were achieved by using an isothermal and RTA treatment for glow discharge deposited a-Si:H films. The a-Si:H films were cystallized at the various temperature from 600$^{\circ}C$ to 1000$^{\circ}C$. As anneal temperature was elevated, the TFT exhibited increased g$\sub$m/ and reduced V$\sub$ds/. V$\sub$T/. The poly-Si grain boundary passivation with grain boundary trap types and activation energies as a function of anneal temperature. The poly-si TFT showed an improved I$\sub$nm//I$\sub$off/ ratio of 10$\^$6/, reduced gate threshold voltage, and increased field effect mobility by three orders.

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