• Title/Summary/Keyword: low k passivation

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Passivation of organic light emitting diodes with a-$SiN_x$ thin films grown by catalyzer enhanced chemical vapor deposition

  • Jeong, Jin-A;Kang, Jae-Wook;Kim, Han-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.659-662
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    • 2007
  • The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

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Improved Dit between ALD HfAlO Dielectric and InGaAs Substrate Using NH3 Plasma Passivation (InGaAs 위의 NH3 Plasma Passivation을 이용한 ALD HfAlO유전체 계면전하(Dit) 향상)

  • Choi, Jae Sung
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.4
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    • pp.27-31
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    • 2018
  • The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.

Optimization of Passivation Process in Upgraded Metallurgical Grade (UMG)-Silicon Solar Cells (UMG 실리콘 태양전지의 패시베이션 공정 연구)

  • Chang, Hyo-Sik;Kim, Yoo-Jin;Kim, Jin-Ho;Hwang, Kwang-Taek;Choi, Kyoon;Ahn, Jon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.438-438
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    • 2009
  • We have investigated the effect of forming gas annealing for Upgraded Metallurgical Grade (UMG)-silicon solar cell in order to obtain low-cost high-efficiency cell using post deposition anneal at a relatively low temperature. We have observed that high concentration hydrogenation effectively passivated the defects and improved the minority carrier lifetime, series resistance and conversion efficiency. It can be attributed to significantly improved hydrogen-passivation in high concentration hydrogen process. This improvement can be explained by the enhanced passivation of silicon solar cell with antireflection layer due to hydrogen re-incorporation. The results of this experiment represent a promising guideline for improving the high-efficiency solar cells by introducing an easy and low cost process of post hydrogenation in optimized condition.

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Effect of Chemical Passivation Treatment and Flow on the Corrosion of 304 Stainless Steel in Hydrochloric Acid Solution

  • Zhao, Jie;Cheng, Cong Qian;Cao, Tie Shan
    • Corrosion Science and Technology
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    • v.14 no.6
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    • pp.273-279
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    • 2015
  • Effects of passive film quality by chemical passivation and solution flow on the corrosion behavior of 304 stainless steel in HCl solution were investigated using a coloration indicator, and by corrosion weight loss, electrochemical polarization and element dissolution measurements. A high redness degree suggests a low passive-film integrity for 304 stainless steel following air exposure, while the minimum redness degree for the samples after chemical passivation suggests a high passive-film integrity. In the static condition, samples subjected to air exposure exhibited a high corrosion rate and preferential dissolution of Fe. Chemical passivation inhibited the corrosion rate due to the intrinsically high structural integrity of the passive film and high concentrations of Cr-rich oxides and hydroxide. Solution flow accelerated corrosion by promoting both the anodic dissolution reaction and the cathodic reaction. Solution flow also altered the preferential dissolution to fast uniform dissolution of metal elements.

Waveguiding Effect in Electroabsorption Modulators: Passivation Layers and Their Impact on Extinction Ratios

  • Shin, Dong-Soo
    • ETRI Journal
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    • v.27 no.1
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    • pp.95-101
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    • 2005
  • Waveguide structures of the stand-alone electroabsorption (EA) modulator and the electroabsorption modulated laser (EML) are investigated using the 3D beam propagation method. The EA waveguide structures with InP-based passivation layers show saturation in the extinction ratio (ER) due to the stray light traveling through the passivation layers. This paper demonstrates that narrower passivation layers suppress stray-light excitation in the EA waveguide, increasing the ER. A taper structure in the isolation section of the EML waveguide can reduce the mode mismatch and suppress the excitation of the stray light, increasing the ER further. Low-index-polymer passivation layers can confine the mode more tightly in the active waveguide, yielding an even higher ER.

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Investigation of varied suface passivation layers for solar cells (태양전지를 위한 다양한 표면 패시베이션(passivation) 막들의 연구)

  • Lee, Ji-Youn;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.90-93
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    • 2004
  • In this work, we have used different techniques for the surface passivation: conventional thermal oxidation (CTO), rapid thermal oxidation (RTO), and plasma-enhanced chemical vapour deposition (PECVD). The surface passivation qualities of eight different single and combined double layer have been investigated both on the phosphorus non-diffused p-type FZ silicon and on phosphorus diffused emitter of 100 ${\Omega}/Sq$ and 40 ${\Omega}/Sq$. In the single layer, silicon dioxide $(SiO_2)$ passivates good on the emitter while silicon nitride (SiN) passivates better than on the non-diffused surface. In the double layers, CTO/SiN1 passivates very well both on non-diffused surface on the emitter. However, RTO/SiN1 and RTO/SiN2 stacks are more suitable for surface passivation in solar cells caused by a relatively good passivation qualities and the low optical reflection. Applying these stacks in solar cells we achieved 18.5 % and 18.8 % on 0.5 ${\Omega}$ cm FZ-Si with planar and textured front surface, respectively. The excellent open circuit voltage $(V_{oc})$ of 675.6 mV is obtained the planar cell with RTO/SiN stack.

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Effects of Hydrogen Passivation on Polycrystalline Silicon Thin Film Transistors (다결정 실리콘 박막 트랜지스터의 수소화 효과)

  • Kim, Yong-Sang
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1239-1241
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    • 1995
  • The different hydrogen passivation effects on low-temperature processed and high-temperature processed poly-Si thin film transistors have been investigated. The hydrogen passivation on low-temperature processed poly-Si TFT results in the increase of the field-effect mobility and the decrease or the threshold voltage, while the hydrogenation increases the field-effect mobility and decreases the leakage current in high-temperature processed poly-Si TFT. The effective trap state densities of low-temperature processed poly-Si TFT before and after 5 hours of hydrogenation are estimated at about $4.0{\times}10^{12}/cm^2$ and $1.5{\times}10^{12}/cm^2$, while those of high-temperature processed poly-Si TFT are about $1.5{\times}10^{12}/cm^2$ and $1.2{\times}10^{12}/cm^2$, respectively.

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Studies on Formation of Passivation Film on KMFC Anode with Initial Charge Temperature (탄소 부극에서 초기 충전온도별 부동태 피막 형성에 대한 연구)

  • Park, Dong-Won;Kim, Woo-Seong;Choi, Yong-Kook
    • Applied Chemistry for Engineering
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    • v.16 no.4
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    • pp.507-512
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    • 2005
  • When carbon electrode is used as an anode in Li ion battery, passivation film forms on the electrode surface during the initial charge process due to so called Solid-Electrolyte Interphase (SEI). The passivation film formed by solvent decomposition during the initial charge process affects charge/discharge capacity. In this paper, 1 M $LiPF_6,EC:DEC$ (1 : 1, volume ratio) electrolyte with $Li_2CO_3$, at various temperatures, the electrochemical characteristics of passivation film formed on Kawasaki Mesophase Fine Carbon electrode surface were investigated by using chronopotentiometry, cyclic voltammetry, and impedance spectroscopy. Experimental observations indicated that as solvent decomposition occurred, the decomposition voltage was strongly dependent on ionic conductivity, which was low in the process at low temperature. The impedance of passivation film formed during the initial charge process, were dependent on the temperature.

Thin Film Passivation of Organic Light Emitting Diodes by Catalyzer Enhanced Chemical Vapor Deposition (CECVD) (촉매반응 화학기상증착법을 이용한 유기발광소자의 박막 봉지)

  • Kim, Han-Ki;Moon, J.M.;Bae, J.H.;Jeong, S.W.;Kim, M.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.71-72
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    • 2006
  • We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

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A Study on the Performance Improvement of GaAs Metamorphic HEMTs Using ICPCVD SiNx Passivation (ICPCVD 질화막 Passivation을 이용한 GaAs Metamorphic HEMT 소자의 성능개선에 관한 연구)

  • Kim, Dong-Hwan
    • Journal of the Korea Institute of Military Science and Technology
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    • v.12 no.4
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    • pp.483-490
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    • 2009
  • In this paper, a novel low-damage silicon nitride passivation for 100nm InAlAs/InGaAs MHEMTs has been developed using remote ICPCVD. The silicon nitride deposited by ICPCVD showed higher quality, higher density, and lower hydrogen concentration than those of silicon nitride deposited by PECVD. In particular, we successfully minimized the plasma damage by separating the silicon nitride deposition region remotely from ICP generation region, typically with distance of 34cm. The silicon nitride passivation with remote ICPCVD has been successfully demonstrated on GaAs MHEMTs with minimized damage. The passivated devices showed considerable improvement in DC characteristics and also exhibited excellent RF characteristics($f_T$of 200GHz).The devices with remote ICPCVD passivation of 50nm silicon nitride exhibited 22% improvement(535mS/mm to 654mS/mm) of a maximum extrinsic transconductance($g_{m.max}$) and 20% improvement(551mA/mm to 662mA/mm) of a maximum saturation drain current ($I_{DS.max}$) compared to those of unpassivated ones, respectively. The results achieved in this work demonstrate that remote ICPCVD is a suitable candidate for the next-generation MHEMT passivation technique.