• 제목/요약/키워드: low k passivation

검색결과 125건 처리시간 0.069초

Metamorphic HEMT에서 low-k Benzocyclobutene(BCB)를 이용한 표면 passivation 비교 연구 (Comparative Study of surface passivation for Metamorphic HEMT using low-k Benzocyclobutene(BCB))

  • 백용현;오정훈;한민;최석규;이복형;이성대;이진구
    • 대한전자공학회논문지SD
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    • 제44권4호
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    • pp.80-85
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    • 2007
  • Passivation 기술은 소자를 외부 환경의 영향으로부터 보호할 수 있고, 소자 성능의 감소를 예방할 수 있기 때문에 능동 소자 제작에 있어서 매우 중요하다. 본 논문에서 passivation 물질로 낮은 유전 상수를 갖는 benzocyclobutene (BCB)과 전통적인 passivation 물질인 Si3N4를 이용하여 GaAs를 기반으로 하는 $0.1{\mu}m\;{\Gamma}$-gate InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs)를 제작하였다. 제작된 MHEMT의 특성은 passivation 전과 후로 구분하여 비교하였다. Passivation후 BCB와 Si3N4를 이용한 경우 모두에서 passivation 이전에 비해 저하된 DC 및 RF 특성을 나타내었으나, BCB를 이용하여 passivation을 한 소자들이 전통적인 passivation 물질인 Si3N4를 이용한 소자들에 비해서 상대적으로 낮은 특성 저하를 DC와 RF에서 함께 나타내었다.

Transparent Sol-Gel Hybrid Dielectric Material Coatings for Low k Passivation Layer

  • Yang, Seung-Cheol;Oh, Ji-Hoon;Kwak, Seung-Yeon;Bae, Byeong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1453-1456
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    • 2009
  • Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

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Metamorphic HEMT에서 low-k Benzocyclobutene (BCB)를 이용한 표면 passivation 비교 연구 (Comparative study of surface passivation for Metamorphic HEMT using low-k Benzocyclobutene(BCB))

  • 백용현;오정훈;한민;최석규;이복형;이성대;이진구
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.471-472
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    • 2006
  • The passivation technology is very important, because this technology can protect a device against the influence of ambient environment, and prevent the performance reduction. In this paper, we fabricated the $0.1{\mu}m\;{\Gamma}$-gate InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates using the low-k benzocyclobutene (BCB) and $Si_3N_4$ as a passivation and we performed the comparisons of characteristics of the MHEMTs. After passivation, the DC and RF measurement results were decreased either the conventional Si3N4 or BCB layers. The decrement of the BCB passivation was smaller than the $Si_3N_4$ passivation.

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원자층 증착법으로 형성된 Al2O3 박막의 질소 도핑에 따른 실리콘 표면의 부동화 특성 연구 (Study on the Passivation of Si Surface by Incorporation of Nitrogen in Al2O3 Thin Films Grown by Atomic Layer Deposition)

  • 홍희경;허재영
    • 마이크로전자및패키징학회지
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    • 제22권4호
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    • pp.111-115
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    • 2015
  • 실리콘 태양전지의 효율을 향상하기 위해서는 소수 캐리어의 높은 수명이 필수조건이다. 따라서, 이를 달성하기 위한 실리콘 표면결함을 없애줄 수 있는 부동화(passivation) 기술이 매우 중요하다. 일반적으로 PECVD 법이나 열산화 공정을 통해 얻어진 $SiO_2$ 박막이 부동화 층으로 많이 사용되나 1000도에 이르는 고온 공정과 낮은 열적 안정성이 문제로 여겨진다. 본 연구에서는 원자층 증착법을 이용하여 400도 미만의 저온 공정을 통해 $Al_2O_3$ 부동화 박막을 형성하였다. $Al_2O_3$ 박막은 고유의 음의 고정 전하밀도로 인해 낮은 표면 재결합속도를 보이는 것으로 알려져 있다. 본 연구에서는 질소 도핑을 통해 높은 음의 고정 전하 밀도를 얻고 이를 통해 좀 더 향상된 실리콘 표면 부동화 특성을 얻고자 하였다.

A Novel Reactive Sputtered Passivation for Large Size TFT-LCD

  • Kim, Hong-Sik;Lim, Joo-Soo;Hong, Hyun-Seok;Kwack, Hee-Yong;Ahn, Sung-Hoon;Yu, Sang-Jeon;Shin, Jong-Keun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.594-596
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    • 2009
  • Amorphous silicon nitride (a-SiNx) passivation film as a passivation layer of TFT-LCDs was deposited by AC-reactive sputtering at low temperature. As a result, the electrical characteristics and reliability of TFT with novel passivation showed the same level as the conventional TFT. Finally, we have developed 47"Full HD IPS TFT-LCDs with sputtered amorphous silicon nitride. It is suitable for low temperature based applications such as OTFT and Flexible display.

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표면 oxide/nitride passivation 적용된 Screen printed 결정질 태양전지 특성 평가 (Investigation of the surface oxide/nitride passivation formation screen printed crystalline silicon solar cells)

  • 이지훈;조경연;이수홍;이규상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.223-224
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    • 2008
  • Important element are low cost, high-efficiency crystalline silicon solar cells. in this paper, Will be able to contribute in low cost, high-efficiency silicon solar cells, Applies oxide/nitride passivation, produced screen-printed solar cells. and the Measures efficiency, and evaluated a justice quality oxide/nitride passivation screen-printed solar cells.

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Stainless Steel Foil Substrates; Robust, Low-Cost, Flexible Active-Matrix Backplane Technology

  • Hong, Yong-Taek;Heiler, Gregory;Cheng, I-Chun;Kattamis, Alex;Wagner, Sigurd
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.892-896
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    • 2005
  • In this paper, key issues of stainless steel foil substrates for display applications have been described. We studied and analyzed technical issues on substrate passivation/planarization to control surface roughness and capacitive coupling from conductive substrates. A thick (either multiple or single) passivation/planarization layer needs to be applied on the nonelectronic-grade stainless steel substrate to provide a smooth surface and electrical insulation from the conductive substrate. Especially for large size, high-resolution display applications, low k and thick passivation/planarization layers should be used for appropriate capacitive coupling. Based on our initial study, a unit area capacitance of less than $2nF/cm^2$ of passivation/planarization layers is needed for 32" HD TV OLED displays.

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Passivation for flexible organic light emitting diodes using parylene

  • Choi, Sung-Hoon;Oh, Myung-Hwan;Lee, Chan-Jae;Moon, Dae-Gyu;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.996-998
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    • 2004
  • In this study, we tested parylene as the passivation layer for flexible organic light emitting diodes (FOLEDs).Parylene as passivtion layer has several advantages which are good optical transparent and low moisture penetration. For more an effective passivation of FOLEDs, we suggest hybrid passivation layer with parylene and silicon oxide. We compared electrical properties and stability of the device with and without passivation layer. The lifetime of FOLED with hybrid passivation layer was increased over three times than that of non-passivated of FOLED.

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Characteristics of a-Si:H TFTs with Silicon Oxide as Passivation Layer

  • Chae, Jung-Hun;Jung, Young-Sup;Kim, Jong-Il;Kim, Chang-Dong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.940-943
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    • 2005
  • The characteristics of a-Si:H TFTs with silicon oxide as passivation layer were reported. It was studied that the insulating characteristics and step coverage characteristics of low temperature silicon oxide before applying to a-Si:H TFT fabrications. With the optimum deposition conditions considering electrical and deposition characteristics, low temperature silicon oxide was applied to a-Si:H TFTs. The changes in characteristics of a-Si:H TFTs were analyzed after replacing silicon nitride passivation layer with low temperature silicon oxide layer. This low temperature silicon oxide can be adapted to high resolution a-Si:H TFT LCD panels.

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고효율 결정질 실리콘 태양전지 적용을 위한 실리콘 산화막 표면 패시베이션 (A Review on Silicon Oxide Sureface Passivation for High Efficiency Crystalline Silicon Solar Cell)

  • 전민한;강지윤;;박철민;송진수;이준신
    • 한국전기전자재료학회논문지
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    • 제29권6호
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    • pp.321-326
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    • 2016
  • Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.