• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.454-455
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• 2009

Selective emitter structure have an important research subject for crystalline silicon solar cells because it is used in production for high efficiency solar cells. A selective emitter structure with highly doped regions underneath the metal contacts is widely known to be one of the most promising high-efficiency solution in solar cell processing. Since most of the selective emitter processes require expensive extra masking and double steps process. Formation of selective emitters is not cost effective. One method that satisfies these requirements is the method of screen-printing with a phosphorus doping paste. In this paper we researched two groups of selective emitter structure process. One was using dopant paste, and the other was using solid source, in order to compare their uniformity, sheet resistance and performance condition time.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.26-26
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• 2003

Lithium storage electrodes for rechargeable batteries require mixed electronic-ionic conduction at the particle scale in order to deliver desired energy density and power density characteristics at the device level. Recently, lithium transition metal phosphates of olivine and Nasicon structure type have become of great interest as storage cathodes for rechargeable lithium batteries due to their high energy density, low raw materials cost, environmental friendliness, and safety. However, the transport properties of this family of compounds, and especially the electronic conductivity, have not generally been adequate for practical applications. Recent work in the model olivine LiFePO$_4$, showed that control of cation stoichiometry and aliovalent doping results in electronic conductivity exceeding 10$^{-2}$ S/cm, in contrast to ~10$^{-9}$ S/cm for high purity undoped LiFePO$_4$. The increase in conductivity combined with particle size refinement upon doping allows current rates of >6 A/g to be utilized while retaining a majority of the ion storage capacity. These properties are of much practical interest for high power applications such as hybrid electric vehicles. The defect mechanism controlling electronic conductivity, and understanding of the microscopic mechanism of lithiation and delithiation obtained from combined electrochemical and microanalytical techniques, will be discussed

• Current Photovoltaic Research
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• 제4권2호
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• pp.31-41
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• 2016

n-type PERT (passivated emitter, rear totally diffused) bifacial solar cells with boron and phosphorus diffusion as p+ emitter and n+ BSF (back surface field) have attracted significant research interest recently. In this work, the influences of wafer thickness, bulk lifetime, emitter, BSF on the photovoltaic characteristics of solar cells are discussed. The performance of the solar cell is determined by using one-dimensional solar cell simulation software PC1D. The simulation results show that the key role of the BSF is to decrease the surface doping concentration reducing the recombination and thus, increasing the cell efficiency. A lightly phosphorus doped BSF (LD BSF) was experimentally optimized to get low surface dopant concentration for n type bifacial solar cells. Pre-oxidation combined with a multi-plateau drive-in, using limited source diffusion was carried out before pre-deposition. It could reduce the surface dopant concentration with minimal impact on the sheet resistance.

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.406-412
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• 1995

A n-CdS thin films were evaporated by thermal evaporation method and their structure, optical transmission spectra and electrical characteristics were investigated. The photovoltaic characteristics of solar cells which were fabricated in optimum conditions measured. The evaporated CdS thin films showed in hexagonal structure and above 80% of optical transmission spectra regardless of impurity doping. The high quality thin films could be obtained at 150.deg. C temperature of substrate, which is useful for solar cell window layer with low resistivity of 6*10$\^$-2/(.ohm.-cm) by In doping We measured the electrical and optical characteristics of the n-CdS/p-InP heterojunction solar cells. The most efficient photovoltaic characteristics of heterojunction solar cells had the open circuit voltage of 0.66V, short circuit current density of 13.85mA/cm$\^$2/, fill factor of 0.576 and conversion efficiency of 8.78% under 60mW/cm$\^$2/ illumination.

• 한국세라믹학회지
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• 제40권8호
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• pp.725-729
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• 2003

The fluorine doping along with heavy metal oxides remarkably raised the $^3$H$_4$ lifetime and the quantum efficiency in Tm$^{3+}$-doped silicate glasses. 29 mol% of fluorine substitution for oxygen in 70SiO$_2$-15Pbo-12ZnO-3KO$_{1}$2/ glass raised $^3$H$_4$ lifetime to 193 $mutextrm{s}$. Refractive indices were raised by heavy metal oxide substitution, but hardly changed by fluorine substitution. The fluorine doping changed the local structure around Tm$^{3+}$ions, then low energy vibrations related to fluorine are considered to largely reduce the multi-phonon relaxation rates in the oxyfluoride silicate glasses. The $^3$H$_4$ lifetimes and absorption and emission spectra of Tm$^{3+}$doped silicate and oxyfluoride silicate glasses are reported, and Judd-Ofelt calculation results are discussed in this paper.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.1-6
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• 2006

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.274-283
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• 2014

In this paper, the epi layer of npn SOI HBT with n+ buried layer has been studied through Sentaurus process and device simulator. The doping value of the deposited epi layer has been varied for the npn HBT to achieve improved $f_tBV_{CEO}$ product (397 GHzV). As the $BV_{CEO}$ value is higher for low value of epi layer doping, higher supply voltage can be used to increase the $f_t$ value of the HBT. At 1.8 V $V_{CE}$, the $f_tBV_{CEO}$ product of HBT is 465.5 GHzV. Further, the film thickness of the epi layer of the SOI HBT has been scaled for better performance (426.8 GHzV $f_tBV_{CEO}$ product at 1.2 V $V_{CE}$). The addition of this HBT module to fully depleted SOI CMOS technology would provide better solution for realizing wireless circuits and systems for 60 GHz short range communication and 77 GHz automotive radar applications. This SOI HBT together with SOI CMOS has potential for future high performance SOI BiCMOS technology.

• 대한전자공학회논문지TE
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• 제37권5호
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• pp.1-6
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• 2000

고순도 적색 발광을 얻기 위하여 진공증착법으로 스쿠아릴늄 색소(Sq)를 첨부한 알루미늄퀴롤린착체 (Alq3)를 발광층으로 사용하는 유기발광소자를 제작하였으며, 소자의 발광특성 및 전기적 특성을 조사하였다. 스쿠아릴늄의 발광 피이크 파장은 670㎚이고 발광강도가 절반이 되는 파장 폭은 30㎚이었다. 스쿠아릴늄의 적색발광은 도핑 농도가 15㏖% 이상에서 고순도 적색 발광특성이 관측되었지만, EL효율은 10/sup -2/W 이하이고 휘도는 0.21cd/㎡, 0.1cd/㎡ 정도로 매우 낮았다. 스쿠아릴늄 분자가 Alq3 분자 내에 트랩 된다고 하더라도 도핑농도가 5㏖% 이상인 경우에 캐리어 드래프트로 작용한다.

• Journal of Magnetics
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• 제17권1호
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• pp.9-12
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• 2012

Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

• 한국세라믹학회지
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• 제33권10호
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.