• Journal of Magnetics
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• v.15 no.1
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• pp.1-6
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• 2010

The magnetic properties of amorphous Fe were investigated by examining the electronic structures of structurally disordered Fe systems generated from crystalline bcc and fcc Fe using a Monte-Carlo simulation. As a rst principles band method, the real space spin-polarized tight-binding linearized-mun-tin-orbital recursion method was used in the local spin density approximation. Compared to the crystalline system, the electronic structures of the disordered systems were characterized by a broadened band width, smoothened local density of states, and reduced local magnetic moment. The magnetic structures depend on the short range configurations. The antiferromagnetic structure is the most stable for a bcc-based disordered system, whereas the noncollinear spin spiral structure is more stable for a fcc-based system.

• Nuclear Engineering and Technology
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• v.34 no.3
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• pp.202-210
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• 2002

The details of the electronic structure of the perfect crystal provides a critically important foundation for understanding the various defect states in uranium dioxide. In order to understand the local defect and impurity mechanism, the calculation of electronic structure of UO$_2$ in the one-electron approximation was carried out, using a semi-empirical tight-binding formalism(LCAO) with and without f-orbitals. The energy band, local and total density of states for both spin states are calculated from the spectral representation of Green’s function. The bonding mechanism in Perfect lattice of UO$_2$ is discussed based upon the calculations of band structure, local and total density of states.

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.477-482
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• 2019

The magnetic properties and electronic structures of the B20 crystal structure MnGe and MnSi were investigated using the density functional theory with local density approximation. The low symmetry of the B20 crystal structure plays a very important role to make electromagnetic characteristics of these materials. The important result of the calculations is that it can be observed the appearance of a pair of gaps in the density of states near the Fermi level in both compounds. These features are results from d-band splitting by the low symmetry of the crystal field from B20 crystal structure. It can be seen that there is half-metallic characteristics from the density of states in both compounds. The calculation shows that the value of magnetic moment of MnGe is 5 times bigger than that of MnSi even though they have same crystal structure. The electronic structures of paramagnetic case have a very narrow indirect gap just above the Fermi level in both compounds. These gaps acquire some significance in establishing the stability of the ferromagnetic states within the local density approximation. Calculation shows that the Mn 3d character dominates the density of states near the Fermi level in both materials.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.10
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• pp.4126-4142
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• 2015

Finger vein recognition is a biometric technology using finger veins to authenticate a person, and due to its high degree of uniqueness, liveness, and safety, it is widely used. The traditional Symmetric Local Graph Structure (SLGS) method only considers the relationship between the image pixels as a dominating set, and uses the relevant theories to tap image features. In order to better extract finger vein features, taking into account location information and direction information between the pixels of the image, this paper presents a novel finger vein feature extraction method, Multi-Orientation Weighted Symmetric Local Graph Structure (MOW-SLGS), which assigns weight to each edge according to the positional relationship between the edge and the target pixel. In addition, we use the Extreme Learning Machine (ELM) classifier to train and classify the vein feature extracted by the MOW-SLGS method. Experiments show that the proposed method has better performance than traditional methods.

• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2511-2520
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• 2018

In this study, Multi-Radial Basis Function Support Vector Machine (Multi-RBF SVM) classifier is introduced based on a composite kernel function. In the proposed multi-RBF support vector machine classifier, the input space is divided into several local subsets considered for extremely nonlinear classification tasks. Each local subset is expressed as nonlinear classification subspace and mapped into feature space by using kernel function. The composite kernel function employs the dual RBF structure. By capturing the nonlinear distribution knowledge of local subsets, the training data is mapped into higher feature space, then Multi-SVM classifier is realized by using the composite kernel function through optimization procedure similar to conventional SVM classifier. The original training data set is partitioned by using some unsupervised learning methods such as clustering methods. In this study, three types of clustering method are considered such as Affinity propagation (AP), Hard C-Mean (HCM) and Iterative Self-Organizing Data Analysis Technique Algorithm (ISODATA). Experimental results on benchmark machine learning datasets show that the proposed method improves the classification performance efficiently.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.329-335
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• 2011

In this paper, a dual-band integer-N frequency divider is proposed for 2.4/5.2 GHz multi-standard wireless local area networks. It consists of a multi-modulus imbalance phase switching prescaler and two all-stage programmable counters. It is able to provide dual-band operation with high resolution while maintaining a low power consumption. This frequency divider is integrated with a 5 GHz VCO for multi-standard applications. Measurement results show that the VCO with frequency divider can work at 5.2 GHz with a total power consumption of 22 mW.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.4
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• pp.1748-1759
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• 2018

Weber Local Descriptor (WLD) is a stable and effective feature extraction algorithm, which is based on Weber's Law. It calculates the differential excitation information and direction information, and then integrates them to get the feature information of the image. However, WLD only considers the center pixel and its contrast with its surrounding pixels when calculating the differential excitation information. As a result, the illumination variation is relatively sensitive, and the selection of the neighbor area is rather small. This may make the whole information is divided into small pieces, thus, it is difficult to be recognized. In order to overcome this problem, this paper proposes Weber Symmetrical Local Graph Structure (WSLGS), which constructs the graph structure based on the $5{\times}5$ neighborhood. Then the information obtained is regarded as the differential excitation information. Finally, we demonstrate the effectiveness of our proposed method on the database of ORL, JAFFE and our own built database, high-definition infrared faces. The experimental results show that WSLGS provides higher recognition rate and shorter image processing time compared with traditional algorithms.

• Journal of the Korean Magnetics Society
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• v.8 no.3
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• pp.111-117
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• 1998

Recent discovery of colossal magnetoresistance (CMR) phenomena in perovskite manganese oxides has evoked great interest for its physical peculiarity and the possible industrial application. Besides manganese oxides, CMR phenomena is also observed in $Tl_2Mn_2O_7$ with pyrochlore structure and in Cr-based chalcogenide with spinel structure. In this paper, we have studied electronic structures of Cr-based chalcogenide spindles $Fe_{1-x}Cu_xCr_2S_4$ at x=0.0, 0.5, 1.0 using the linearized muffin-tin orbital (LMTO) band method within the local density approximation (LDA). The characteristic resistivity for x=0.0, 0.5 could be explained qualitatively in terms of the half-metalic electronic structure and the Jahn-Teller effect. Especially, the half-metallic nature appearing in the metallic temperature regime is well descibed by the proposed conduction model for x=0.0, 0.5, 1.0. We have suggested, based on the conduction model, that the CMR phenomena observed in these compounds are closely correlated with the obtained half-metallic electronic structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.377-377
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• 2010

FINEMET type nanocrystalline materials synthesized by controlled crystallization of amorphous ribbons[1] exhibit excellent soft magnetic properties making them attractive for technological applications. Present work reports the electronic structure studies of Co-substituted FINEMET to get information on the effect of successive Co substitution on local environment around Fe and Co atom by using near edge x-ray absorption fine structure (NEXAFS) and x-ray magnetic circular dichroism (XMCD) measurements. NEXAFS spectroscopy and XMCD measurements have been carried out at Fe $L_{3,2}$ and Co $L_{3,2}$-edges to investigate the chemical states and electronic structure of FINEMET [$(Fe_{100-x}Co_x)_{78}Si_9Nb_3Cu_1Ba$](0$L_{3,2}$-edge reveal that Fe is in 2+ state and in tetrahedral symmetry with other elements. The magnetic properties exhibiting soft magnetic behavior[2] are discussed on the basis of the electronic structure studied through XMCD.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.1-10
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• 2008

In this paper, we describe a design of a 128bit MRAM based on a new switching architecture which is Local Field Switching(LFS). LFS uses a local magnetic field generated by the current flowing through an MTJ. This mode reduces the writing current since small current can induce large magnetic field because of close distance between MTJ and the current. It also improves the cell selectivity over using conventional MTJ architecture because it doesn't need a digit line for writing. The MRAM has 1-Transistor 1-Magnetic Tunnel Junction (IT-1MTJ) memory cell structure and uses a bidirectional write driver, a mid-point reference cell block and a current mode sense amplifier. CMOS emulation cell is adopted as an LFS-MTJ cell to verify the operation of the circuit without the MTJ process. The memory circuit is fabricated using a $0.18{\mu}m$ CMOS technology with six layers o) metal and tested on custom board.