• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.39-43
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• 1985

The charcterization of optical lithography on the step and repeat projection system is studied. Parameters that influence optical lithography were analyzed and the experiment was performed on the mask of $\pm$ 5rm, the surface flatness. From the experiment, the relationship between linewidth diviation on defocus and linewidth shift on exposure of the small features is obtained. Conditions maintaining good uniformity of small features from these relation-ships is presented.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.11
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• pp.77-84
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• 2009

Alignment error of the BGA lithography equipment is mainly caused by the dimensional change of the BGA panel which is generated during the manufacturing processes. To minimize the alignment error, 'mark alignment' algorithm in place of 'center alignment' algorithm was proposed and the optimal solution for the algorithm was derived by simple analytic form. The developed algorithm distributes evenly the alignment error over the whole panel which was evaluated by the numerical simulation. Finally, the developed algorithm was implemented to the controller of the lithography equipment and the alignment error was measured at the fiducial mark location. From the measurement, it is also concluded that the developed alignment algorithm be effective to reduce the maximum value of alignment error.

• Electronics and Telecommunications Trends
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• v.13 no.5 s.53
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• pp.38-52
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• 1998

Phase-shifting masks (PSM), optical proximity correction (OPC), off-axis illumination (OAI), annular illumination (AI)의 리소그래피 분해능 향상 기법과 deep ultraviolet photoresist의 개발 및 리소그래피의 최근 기술 동향을 요약 소개한다. DUV 리소그래피의 대안으로 관심을 끌고 있는 scattering with angular limitation projection electron-beam lithography (SCALPEL), extreme ultraviolet lithography (EUVL), X-ray lithography (XRL), ion projection lithography (IPL) 등의 새로운 리소그래피 기술들의 기본 원리와 최근 기술 동향도 소개하였다. 리소그래피는 반도체 공정에 있어서 가장 중요한 부분을 차지하기 때문에 리소그래피의 최근 기술 동향을 검토해 봄으로써 국내 리소그래피 장비 산업의 기술 개발을 위한 방향 설정에 도움이 될 것으로 생각한다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.6 s.237
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• pp.852-859
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• 2005

Molecular dynamics simulations of nanoimprint lithography in which a stamp with patterns is pressed onto amorphous poly-(methylmethacrylate) (PMMA) surface are performed to study the deformation of polymer. Force fields including bond, angle, torsion, inversion, van der Waals and electrostatic potential are used to describe the intermolecular and intramolecular force of PMMA molecules and stamp. Periodic boundary condition is used in horizontal direction and Nose-Hoover thermostat is used to control the system temperature. As the simulation results, the adhesion forces between stamp and polymer are calculated and the mechanism of deformation are investigated. The effects of the adhesion and friction forces on the polymer deformation are also studied to analyze the pattern transfer in nanoimprint lithography. The mechanism of polymer deformation is investigated by means of inspecting the indentation process, molecular configurational properties, and molecular configurational energies.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.16 no.3
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• pp.208-215
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• 2016

The lithography hotspot detection process is crucial for semiconductor design development process. But, the lithography hotspot detection using optical simulation method takes much time and it slowdown the layout design development cycle. Though the geometry based approach is introduced as an alternative, it still revealed low detection performance and sophisticated framework. To solve this problem, we introduce a deep convolutional neural network based hotspot detection method. Our method made better results in ICCCAD 2012 dataset. To reach this score, we used lots of technical effort to improve the result in addition to just utilizing the nature of convolutional neural network. Inspection region reduction, data augmentation, DBSCAN clustering helped our work more stable and faster.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.3
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• pp.20-26
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• 2008

Nanoimprint lithography(NIL) is becoming next generation lithography of significant interest due to its low cost and a potential patterning resolution of 10nm or less. Success of the NIL relies on the adequate conditions of pressure, temperature and time. To have the adequate conditions for NIL, one has to understand the polymer flowing behavior during the imprinting process. In this paper, an analytical approach of polymer flow in thermal NIL was performed based on the squeeze flow with partial slip boundary conditions. Velocity profiles and pressure distributions of the polymer flow were obtained and imprinting forces and residual thickness were predicted with the consideration of the slip velocity between the polymer and the mold/substrate. The results show that the consideration of the slip is very important for investigating the polymer flow in Thermal NIL.

• Laser Solutions
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• v.14 no.2
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• pp.13-16
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• 2011

We fabricated the Fresnel zone plate using femtosecond laser lithography-assisted micro-machining, which is a combined process of nonlinear lithography and wet etching. We investigated the focusing properties by launching a 632.8nm wavelength He-Ne laser beam into the zone plate. The spot size of the primary focal point was $27{\mu}m$ and the intensity of focal point was 0.565W/$cm^2$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.2
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• pp.186-190
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• 2004

By this time, a mold with nano size pattern was produced using a fabrication of X-ray lithography method and in a m icro size's case it was produced using fabrication of Deep UV lithography. In this paper, we produced mold with 400 $\mu{m}$depth pattern using a new technology of SLS(Selective Laser Sintering) Rapid Prototyping method. In addition to enhance strength and thermal stability, we produced Ni structure with a thickness of 300 $\mu{m}$ on a surface of mold using electro forming method.

• Journal of Surface Science and Engineering
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• v.42 no.2
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• pp.59-62
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• 2009

Antireflection pattern, moth-eye structure, was fabricated on lens using Ultra Violet nanoimprint lithography and flexible template. Ni template with conical shaped structure was used as a master template to molding. The flexible poly vinyl alcohol template was fabricated by molding. This poly vinyl alcohol template was used as an imprint template of imprint at lens. Using Ultra Violet nanoimprint lithography and poly vinyl alcohol template, polymer based moth-eye structure was formed on lens and its transmittance was increased up to 94% from 92% at 550 nm wavelength.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.25-33
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• 2007

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.