• Journal of the Semiconductor & Display Technology
• /
• v.17 no.3
• /
• pp.41-45
• /
• 2018

Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.

• Journal of Adhesion and Interface
• /
• v.23 no.4
• /
• pp.116-121
• /
• 2022

OFET have require fine patterning technology for organic semiconductor solution process to be used in actual electronics. In this study, we compared and analyzed the soft lithography method which can form fine patterns more than the conventional spin coating method in order to confirm that it can have better electrical characteristics. The soft lithography method produced a flexible master mold using nano patterns on compact disc surfaces and obtained a 650 nm wide 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzo thiophene (C_8-BTBT) nanowires. As a result, the field-effect mobility of devices fabricated by the spin coating method was 0.0036 cm²/Vs and mobility of devices produced by soft lithography method was 0.086 cm²/Vs, which was about 20 times higher than spin-coated devices and has better electrical performance.

• Journal of the Speleological Society of Korea
• /
• no.77
• /
• pp.21-30
• /
• 2007

Photo-lithography lies in the middle of the wafer fabrication process. It is often considered as the most critical step in the IC process. We use a mask in exposure steps of the photo-lithography. Typically, 20 to 25 different levels of masks are required to complete an IC device. That means, if a photo process can be developed with the use of only one photo mask, we can reduce more process cost. To satisfy this, we plan to develop an alternative photo mask. For this reason, we chose to use a LCD. We expect to develop a LCD panel that can be changed by electrical control. This is the main idea about the adjustive photo mask. The Photo mask made of LCD panel will replace the former one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.12
• /
• pp.1002-1009
• /
• 2011

The light extraction efficiency of top-emitting organic light-emitting diode (OLED) was improved by insertion of corrugation patterns between indium tin oxide and organic layers. The corrugation patterns was fabricated by nanosphere lithography, which could form a self-assembled particle monolayer over a large area. The electrical and optical properties for the OLED devices fabricated by vacuum evaporation, were investigated. We have demonstrated the enhancement of the power efficiency of corrugated OLED. As a result, the power efficiency of the corrugated OLED was found to be more than 42%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.12
• /
• pp.853-857
• /
• 2013

We design, develope and test a parallel active polymer pen lithography (PPL) device, which consists of individually addressable elastomeric probe tips. The PPL array chip is fabricated using soft lithography method with polydimethylsiloxane (PDMS) material. Individual probe can be pneumatically actuated via a computer controlled interface. We demonstrate parallel writing with 16 individually addressed pens, with each pen producing a different pattern in the same run. The largest proof-of-concept array fabricated is $4{\times}4$ with a spacing of $250{\mu}m$ in both x and y axes.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.369-369
• /
• 2012

The present work deals with selective deposition of copper on fluoropolymers patterned silicon (111) surfaces. The pattern of fluoropolymer was fabricated by nanoimprint lithography (NIL) and plasma reactive ion etching (RIE) was used to remove the residuals layers. Copper was electrochemically deposited in bare Si regions which were not covered with fluoropolymers. The patterns of fluoropolymers and copper have been investigated by scanning electron microscopy (SEM). In this work, we used two deposition methods. One is galvanic displacement method and another is electrodeposition. Selective deposition works in both cases and it shows applicability to other materials. By optimization of the deposition conditions can be achieved therefore this process represents a simple approach for a direct high resolution patterning of silicon surfaces.

• Journal of Institute of Control, Robotics and Systems
• /
• v.10 no.7
• /
• pp.604-610
• /
• 2004

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of transferred nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a $5\times5\times0.09$ in. quartz stamp whose critical dimension is 377 nm was fabricated using the etching process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply the fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer. Experiments have shown that the multi-dispensing method can enable UV-NIL using a large-area stamp.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.06a
• /
• pp.1168-1170
• /
• 2005

Nanoimprint Lithography(NIL) has increasingly been recognized as a key manufacturing technology for nanosized feature. One of the most important task for nanoimprint lithography is to provide the imprinting stamp with low price. The Stamp fabricated with Si based material by e-beam lithography, RIE is extremely expensive and its throughput is very limited and PDMS replica is too soft to hold high imprinting pressure.(>5atm) In this study, we present the imprinting stamp which can be easily replicated from original mold and is based on PVC film. Replication of original Si mold to PVC film was done by Hot embossing technique, ($120^{\circ}C$ of Temperature, 20 atm applied) As small as 100nm patterns were successfully transferred into PVC film. The size of stamp was up to 100mm in diameter.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.10a
• /
• pp.912-915
• /
• 2004

A vacuum environment is very important for NGL(Next Generation Lithography) apparatuses such as EUVL(Extreme Ultra Violet Lithography) or EPL(Electron Projection Lithography) and so on. The performance of these systems is dominated by vacuum level of processing and positioning accuracy of a stage. So, ultra-precision stage usable in a high vacuum level is needed for the improved performance of these devices. In contrast to atmospheric condition, a special attention must be paid to guide bearing, actuator and other elements. In this paper, air bearing is adopted because of its very high motional accuracy. So, air bearing is designed to be vacuum compatible using differential exhaust method, which prevents air from entering into vacuum chamber. For this, leakage analysis is performed theoretically and verified from experiment.

• Journal of the Korean Society for Precision Engineering
• /
• v.33 no.10
• /
• pp.845-850
• /
• 2016

A direct laser lithography system is widely used to fabricate various types of DOEs (Diffractive Optical Elements) including lenses made as CGH (Computer Generated Hologram). However, a parametric study that uniformly and precisely fabricates the diffractive patterns on a large area (up to $200mm{\times}200mm$) has not yet been reported. In this paper, four parameters (Focal Position Error, Intensity Variation of the Lithographic Beam, Patterning Speed, and Etching Time) were considered for stabilization of the direct laser lithography system, and the experimental results were presented.